公开(公告)号：US20170141095A1

公开(公告)日：2017-05-18

申请号：US15420594

申请日：2017-01-31

Applicant: Apple Inc.

Inventor： John Bruno ,  Jun Zhai ,  Timothy J. Millet

IPC: H01L25/18 ,  H01L23/367 ,  H01L23/13 ,  H01L23/538

CPC classification number: H01L25/18 ,  H01L23/13 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/13124 ,  H01L2224/134 ,  H01L2224/13411 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1427 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/0204 ,  H05K1/141 ,  H05K1/144 ,  H05K1/181 ,  H05K2201/09036 ,  H05K2201/10416 ,  H05K2201/10734 ,  H01L2924/014

Abstract: A semiconductor package includes a processor die (e.g., an SoC) and one or more memory die (e.g., DRAM) coupled to a ball grid array (BGA) substrate. The processor die and the memory die are coupled to opposite sides of the BGA substrate using terminals (e.g., solder balls). The package may be coupled to a printed circuit board (PCB) using one or more terminals positioned around the perimeter of the processor die. The PCB may include a recess with at least part of the processor die being positioned in the recess. Positioning at least part of the processor die in the recess reduces the overall height of the semiconductor package assembly. A voltage regulator may also be coupled to the BGA substrate on the same side as the processor die with at least part of the voltage regulator being positioned in the recess a few millimeters from the processor die.

公开(公告)号：US09601471B2

公开(公告)日：2017-03-21

申请号：US14804261

申请日：2015-07-20

Applicant: Apple Inc.

Inventor： Jun Zhai ,  Kunzhong Hu

IPC: H01L25/00 ,  H01L25/10

CPC classification number: H01L25/105 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/83101 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2224/92244 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1443 ,  H01L2924/1451 ,  H01L2924/14511 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/19

Abstract: Vertically stacked system in package structures are described. In an embodiment, a package includes a first level molding and fan out structure, a third level molding and fan out structure, and a second level molding and fan out structure between the first and third levels. The second level molding and fan out structure includes back-to-back facing die, with a front surface of each die bonded to a redistribution layer.

公开(公告)号：US09595514B2

公开(公告)日：2017-03-14

申请号：US15087200

申请日：2016-03-31

Applicant: Apple Inc.

Inventor： John Bruno ,  Jun Zhai ,  Timothy J. Millet

IPC: H01L25/18 ,  H01L23/13 ,  H05K1/02 ,  H05K1/14 ,  H01L25/16 ,  H01L23/367 ,  H01L23/538 ,  H05K1/18

CPC classification number: H01L25/18 ,  H01L23/13 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/13124 ,  H01L2224/134 ,  H01L2224/13411 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1427 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/0204 ,  H05K1/141 ,  H05K1/144 ,  H05K1/181 ,  H05K2201/09036 ,  H05K2201/10416 ,  H05K2201/10734 ,  H01L2924/014

Abstract: A semiconductor package includes a processor die (e.g., an SoC) and one or more memory die (e.g., DRAM) coupled to a ball grid array (BGA) substrate. The processor die and the memory die are coupled to opposite sides of the BGA substrate using terminals (e.g., solder balls). The package may be coupled to a printed circuit board (PCB) using one or more terminals positioned around the perimeter of the processor die. The PCB may include a recess with at least part of the processor die being positioned in the recess. Positioning at least part of the processor die in the recess reduces the overall height of the semiconductor package assembly. A voltage regulator may also be coupled to the BGA substrate on the same side as the processor die with at least part of the voltage regulator being positioned in the recess a few millimeters from the processor die.

Abstract translation: 半导体封装包括耦合到球栅阵列（BGA）衬底的处理器管芯（例如，SoC）和一个或多个存储器管芯（例如，DRAM）。 使用端子（例如，焊球）将处理器管芯和存储器管芯耦合到BGA衬底的相对侧。 可以使用位于处理器管芯的周边周围的一个或多个端子将封装耦合到印刷电路板（PCB）。 PCB可以包括凹部，其中处理器管芯的至少一部分位于凹部中。 将处理器管芯的至少一部分定位在凹部中减小了半导体封装组件的整体高度。 电压调节器还可以与处理器管芯相同侧的BGA衬底耦合，其中至少一部分电压调节器位于距离处理器管芯几毫米的凹槽中。

公开(公告)号：US09589936B2

公开(公告)日：2017-03-07

申请号：US14619002

申请日：2015-02-10

Applicant: Apple Inc.

Inventor： Jun Zhai ,  Kunzhong Hu ,  Flynn P. Carson

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00 ,  H01L23/552 ,  H01L25/03 ,  H01L23/525

CPC classification number: H01L25/0657 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/525 ,  H01L23/552 ,  H01L24/19 ,  H01L24/89 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/80001 ,  H01L2224/97 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19105 ,  H01L2224/81

Abstract: Fanout wafer level packages (FOWLPs) and methods of formation are described. In an embodiment, a package includes a first routing layer, a first die on a top side of the first routing layer, and a first molding compound encapsulating the first die on the first routing layer. A first plurality of conductive pillars extends from a bottom side of the first routing layer. A second die is on a top side of a second routing layer, and the first plurality of conductive pillars is on the top side of the routing layer. A second molding compound encapsulates the first molding compound, the first routing layer, the first plurality of conductive pillars, and the second die on the second routing layer. In an embodiment, a plurality of conductive bumps (e.g. solder balls) extends from a bottom side of the second routing layer.

Abstract translation: 描述了扇出晶片级封装（FOWLP）和形成方法。 在一个实施例中，包装包括第一布线层，第一布线层的顶侧上的第一管芯，以及将第一管芯封装在第一布线层上的第一模制化合物。 第一多个导电柱从第一路由层的底侧延伸。 第二管芯位于第二布线层的顶侧，并且第一多个导电柱位于布线层的顶侧。 第二模塑料在第二路由层上封装第一模塑料，第一路由层，第一多个导电柱和第二模。 在一个实施例中，多个导电凸块（例如焊球）从第二布线层的底侧延伸。

公开(公告)号：US20170053897A1

公开(公告)日：2017-02-23

申请号：US14935310

申请日：2015-11-06

Applicant: Apple Inc.

Inventor： Kwan-Yu Lai ,  Jun Zhai ,  Kunzhong Hu

IPC: H01L25/065 ,  H01L23/48 ,  H01L21/768 ,  H01L21/683 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L25/0657 ,  H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/7684 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/80 ,  H01L24/89 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/10 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/181 ,  H01L2924/186

Abstract: Packages and 3D die stacking processes are described. In an embodiment, a package includes a second level die hybrid bonded to a first package level including a first level die encapsulated in an oxide layer, and a plurality of through oxide vias (TOVs) extending through the oxide layer. In an embodiment, the TOVs and the first level die have a height of about 20 microns or less.

Abstract translation: 描述了封装和3D裸片堆叠过程。 在一个实施例中，封装包括结合到包括封装在氧化物层中的第一级管芯的第一封装级的第二级管芯晶体管和延伸穿过氧化物层的多个通孔氧化物通孔（TOV）。 在一个实施例中，TOV和第一级模具具有大约20微米或更小的高度。

公开(公告)号：US09574959B2

公开(公告)日：2017-02-21

申请号：US14517387

申请日：2014-10-17

Applicant: Apple Inc.

Inventor： Caleb C. Han ,  Tongbi Jiang ,  Jun Zhai

IPC: H01L29/84 ,  H01L21/50 ,  G01P15/12 ,  G01P15/08 ,  B81B7/00 ,  G01L7/08 ,  H01L41/113 ,  H01L41/09

CPC classification number: G01L7/08 ,  B81B7/0048 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/0023 ,  B81C2203/0792 ,  G01L9/0045 ,  G01L9/0048 ,  G01L19/0618 ,  G01L19/146 ,  G01L19/148 ,  H01L41/094 ,  H01L41/1136 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48095 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/1461 ,  H01L2924/16151 ,  H01L2924/16195

Abstract: Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.

Abstract translation: 描述传感器封装和形成方式。 在一个实施例中，传感器封装包括支撑模具，其特征在于凹部区域和在凹部区域上方突出的支撑锚固件。 传感器模具结合到支撑锚定件，使得在传感器模具和凹部区域之间存在气隙。 传感器模具包括位于空气间隙正上方的传感器。

公开(公告)号：US09442025B2

公开(公告)日：2016-09-13

申请号：US14066942

申请日：2013-10-30

Applicant: Apple Inc.

Inventor： Yizhang Yang ,  Jun Zhai

IPC: G01K15/00 ,  G01K3/04 ,  G01K7/01

CPC classification number: G01K15/005 ,  G01K7/01

Abstract: In some embodiments, a method may be provided for calibrating integrated circuit temperature sensors. The method may include sensing a first temperature using a first temperature sensor and a second temperature using a second temperature sensor. The first temperature sensor may be calibrated and is external to a package of the integrated circuit. The second temperature sensor may be included in the integrated circuit. The method may include increasing a temperature of the integrated circuit. The method may include allowing the integrated circuit and the package to thermally equilibrate over a first period of time. The method may include sensing a first slope of a temperature decay by the first temperature sensor. The method may include sensing a second slope of a temperature decay by the second temperature sensor. The method may include calibrating the second temperature sensor responsive to a difference between the first and second temperatures and the first and second slopes.

Abstract translation: 在一些实施例中，可以提供用于校准集成电路温度传感器的方法。 该方法可以包括使用第一温度传感器感测第一温度，并且使用第二温度传感器来感测第二温度。 第一温度传感器可以被校准，并且在集成电路的封装外部。 第二温度传感器可以包括在集成电路中。 该方法可以包括增加集成电路的温度。 该方法可以包括允许集成电路和封装在第一时间段内热平衡。 该方法可以包括感测第一温度传感器的温度衰减的第一斜率。 该方法可以包括感测第二温度传感器的温度衰减的第二斜率。 该方法可以包括响应于第一和第二温度与第一和第二斜率之间的差异来校准第二温度传感器。

公开(公告)号：US20160093592A1

公开(公告)日：2016-03-31

申请号：US14601623

申请日：2015-01-21

Applicant: Apple Inc.

Inventor： Jun Zhai

IPC: H01L25/065 ,  H01L49/02 ,  H01L23/528 ,  H01L23/31 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L21/78

Abstract: A semiconductor device is described that includes an integrated circuit coupled to a first semiconductor substrate with a first set of passive devices (e.g., inductors) on the first substrate. A second semiconductor substrate with a second set of passive devices (e.g., capacitors) may be coupled to the first substrate. Interconnects in the substrates may allow interconnection between the substrates and the integrated circuit. The passive devices may be used to provide voltage regulation for the integrated circuit. The substrates and integrated circuit may be coupled using metallization.

Abstract translation: 描述了一种半导体器件，其包括在第一衬底上与第一组无源器件（例如，电感器）耦合到第一半导体衬底的集成电路。 具有第二组无源器件（例如，电容器）的第二半导体衬底可以耦合到第一衬底。 基板中的互连可以允许基板和集成电路之间的互连。 无源器件可用于为集成电路提供电压调节。 基板和集成电路可以使用金属化来耦合。

公开(公告)号：US20150364454A1

公开(公告)日：2015-12-17

申请号：US14558906

申请日：2014-12-03

Applicant: Apple Inc.

Inventor： Jun Zhai ,  Chonghua Zhong ,  Kunzhong Hu ,  Se Young Yang

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/367 ,  H01L25/065 ,  H01L23/522

CPC classification number: H01L25/18 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/5384 ,  H01L24/17 ,  H01L24/20 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/24137 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/1436 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00

Abstract: In some embodiments, it is desirable to increase memory bandwidth using an integrated solution. In one embodiment, wide I/O memory may be used. Described herein are embodiments of systems and methods of reconfiguring wide I/O memory modules. The reconfigured memory modules may be configured such that the memory modules function in combination with current packaging architectures.

Abstract translation: 在一些实施例中，期望使用集成解决方案来增加存储器带宽。 在一个实施例中，可以使用宽I / O存储器。 这里描述了重新配置宽I / O存储器模块的系统和方法的实施例。 重新配置的存储器模块可以被配置为使得存储器模块与当前的封装体系结合起来。

公开(公告)号：US20150160701A1

公开(公告)日：2015-06-11

申请号：US14097491

申请日：2013-12-05

Applicant: Apple Inc.

Inventor： John Bruno ,  Jun Zhai ,  Timothy J. Millet

IPC: G06F1/18

CPC classification number: H01L25/18 ,  H01L23/13 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/13124 ,  H01L2224/134 ,  H01L2224/13411 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1427 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/0204 ,  H05K1/141 ,  H05K1/144 ,  H05K1/181 ,  H05K2201/09036 ,  H05K2201/10416 ,  H05K2201/10734 ,  H01L2924/014

Abstract: A semiconductor package includes a processor die (e.g., an SoC) and one or more memory die (e.g., DRAM) coupled to a ball grid array (BGA) substrate. The processor die and the memory die are coupled to opposite sides of the BGA substrate using terminals (e.g., solder balls). The package may be coupled to a printed circuit board (PCB) using one or more terminals positioned around the perimeter of the processor die. The PCB may include a recess with at least part of the processor die being positioned in the recess. Positioning at least part of the processor die in the recess reduces the overall height of the semiconductor package assembly. A voltage regulator may also be coupled to the BGA substrate on the same side as the processor die with at least part of the voltage regulator being positioned in the recess a few millimeters from the processor die.

Abstract translation: 半导体封装包括耦合到球栅阵列（BGA）衬底的处理器管芯（例如，SoC）和一个或多个存储器管芯（例如，DRAM）。 使用端子（例如，焊球）将处理器管芯和存储器管芯耦合到BGA衬底的相对侧。 可以使用位于处理器管芯的周边周围的一个或多个端子将封装耦合到印刷电路板（PCB）。 PCB可以包括凹部，其中处理器管芯的至少一部分位于凹部中。 将处理器管芯的至少一部分定位在凹部中减小了半导体封装组件的整体高度。 电压调节器还可以与处理器管芯相同侧的BGA衬底耦合，其中至少一部分电压调节器位于距离处理器管芯几毫米的凹槽中。