公开(公告)号：US06722964B2

公开(公告)日：2004-04-20

申请号：US09824644

申请日：2001-04-04

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

IPC分类号： B24B100

CPC分类号： B24B37/345 ,  B24B9/065 ,  B24B37/12 ,  H01L21/67046

摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

摘要翻译： 抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属 电影。 抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光 用于抛光衬底的外周部分的机构。

公开(公告)号：US06646268B2

公开(公告)日：2003-11-11

申请号：US10083564

申请日：2002-02-27

申请人： Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

发明人： Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

IPC分类号： H01J3700

CPC分类号： H01J27/08 ,  H01J27/02 ,  H01J2237/08 ,  H01J2237/31701

摘要： According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.

公开(公告)号：US06614033B2

公开(公告)日：2003-09-02

申请号：US10002296

申请日：2001-12-05

申请人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

发明人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/31711

摘要： An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.

公开(公告)号：US06538323B1

公开(公告)日：2003-03-25

申请号：US09449941

申请日：1999-11-29

申请人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

发明人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

IPC分类号： H01L2348

CPC分类号： H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/11001 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 &mgr;m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

摘要翻译： 在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。 然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。 此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。 因此，凸块电极结构完成。

公开(公告)号：US06495841B1

公开(公告)日：2002-12-17

申请号：US09299145

申请日：1999-04-26

申请人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

发明人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

IPC分类号： H01J37317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/3174

摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

摘要翻译： 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

公开(公告)号：US06409780B1

公开(公告)日：2002-06-25

申请号：US09482937

申请日：2000-01-14

申请人： Hiroyuki Yano ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Kiyonobu Kubota

发明人： Hiroyuki Yano ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Kiyonobu Kubota

IPC分类号： C09K314

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.

摘要翻译： 提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。 所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。 用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

公开(公告)号：US06334928B1

公开(公告)日：2002-01-01

申请号：US09239793

申请日：1999-01-29

申请人： Makoto Sekine ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Makoto Sekine ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： B01D800

CPC分类号： B01D53/06 ,  B01D8/00 ,  B01D53/0462 ,  B01D2257/2066 ,  B01D2258/0216 ,  B01D2259/40056 ,  B01D2259/40088 ,  B01D2259/402 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/34 ,  Y02P70/605

摘要： A semiconductor wafer etching system exhausts an exhaust gas including fluorocarbon gas to an exhaust line. Two traps, that are capable of trapping the fluorocarbon gas in the exhaust gas by cooled adsorption and releasing the adsorbed fluorocarbon gas by heating, are alternately arranged on the exhaust line. The two traps are alternately separated from the exhaust gas and regenerated on a regeneration line which serves to release the adsorbed fluorocarbon gas from the traps. The trap which is in the trap mode to adsorb the fluorocarbon gas is cooled to −120° C. or less. The trap which is in the regeneration mode to release the adsorbed fluorocarbon gas is heated to −100° C. or more.

摘要翻译： 半导体晶片蚀刻系统将包括碳氟化合物气体的废气排出到排气管线。 能够通过冷却吸附捕集排气中的碳氟化合物气体并且通过加热而释放吸附的碳氟化合物气体的两个捕集阱交替排列在排气管线上。 两个捕集阱与废气交替分离，并在用于从捕集器中释放吸附的碳氟化合物气体的再生管线上再生。 陷阱模式中吸附碳氟化合物气体的阱被冷却至-120℃或更低。 处于再生模式以释放吸附的碳氟化合物气体的捕集器被加热到​​-100℃或更高。

公开(公告)号：US06331681B1

公开(公告)日：2001-12-18

申请号：US08214623

申请日：1994-03-18

申请人： Katsuya Okumura

发明人： Katsuya Okumura

IPC分类号： H05K116

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01R43/00 ,  H05K3/102 ,  H05K3/14 ,  H05K3/32 ,  H05K2201/10636 ,  H05K2203/0425 ,  H05K2203/1461 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/48

摘要： Electrical connection device for forming electrical connection between a first portion and a second portion of a semiconductor device. The first portion is set near or in contact with the second portion. The first and second portions are electrically connected by spraying fine metal particles of gold, nickel or copper in a carrier gas of helium, argon, hydrogen or nitgrogen on the first and second portions to form a metal bump. Prior to spraying the fine metal particles to form the metal bump, hard particles of titanium, copper, hafnium, zirconium or vanadium may be sprayed on the first and second portions to remove contamination layers.

摘要翻译： 用于在半导体器件的第一部分和第二部分之间形成电连接的电连接装置。 第一部分设置在第二部分附近或与第二部分接触。 第一和第二部分通过在第一和第二部分上喷射氦气，氩气，氢气或氮气的载气中的金，镍或铜的金属细颗粒电连接以形成金属凸块。 在喷涂细金属颗粒以形成金属凸块之前，可以将钛，铜，铪，锆或钒的硬颗粒喷涂在第一和第二部分上以除去污染层。

公开(公告)号：US06291891B1

公开(公告)日：2001-09-18

申请号：US09228642

申请日：1999-01-12

申请人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

发明人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

IPC分类号： H01L2348

CPC分类号： H01L21/76852 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

公开(公告)号：US06274512B1

公开(公告)日：2001-08-14

申请号：US09658508

申请日：2000-09-08

申请人： Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Katsuya Okumura

发明人： Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Katsuya Okumura

IPC分类号： H01L213605

CPC分类号： H01L21/02043 ,  H01L21/28518

摘要： A method comprises the steps of forming a damaged layer on a silicon substrate by subjecting the silicon substrate to a plasma treatment, forming a silicon oxide layer by exposing the surface of the damaged layer to an oxygen plasma to oxidize the surface of the silicon substrate including the damaged layer and selectively eliminating the silicon oxide layer under a condition of a high selective ratio to the silicon, in which the film thickness of the silicon oxide layer is controlled by controlling an ion energy of the oxygen plasma and exposure time of the surface of the damaged layer to the oxygen plasma in accordance with the film thickness of the damaged layer.

摘要翻译： 一种方法包括以下步骤：通过对硅衬底进行等离子体处理，在硅衬底上形成损伤层，通过将损伤层的表面暴露于氧等离子体来氧化氧化硅层，以氧化硅衬底的表面，包括 损坏层，并且在与硅的选择率高的条件下选择性地除去氧化硅层，其中通过控制氧等离子体的离子能量和表面的暴露时间来控制氧化硅层的膜厚度 根据损伤层的膜厚度，氧等离子体的损伤层。