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公开(公告)号：US10096748B2
公开(公告)日：2018-10-09
申请号：US15083063
申请日：2016-03-28
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov
Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.
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公开(公告)号：US20180261646A1
公开(公告)日：2018-09-13
申请号：US15976805
申请日：2018-05-10
Applicant: Micron Technology, Inc.
Inventor： Vladimir Odnoblyudov , Martin F. Schubert
CPC classification number: H01L27/15 , H01L23/60 , H01L33/0075 , H01L33/0079 , H01L33/382 , H01L33/405 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
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公开(公告)号：US10002994B2
公开(公告)日：2018-06-19
申请号：US14684192
申请日：2015-04-10
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Kevin Tetz
CPC classification number: H01L33/58 , H01L25/0753 , H01L33/007 , H01L33/0095 , H01L33/50 , H01L33/54 , H01L51/5275 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.
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94.发明申请公开(公告)号：US20180033909A1
公开(公告)日：2018-02-01
申请号：US15729487
申请日：2017-10-10
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Scott D. Schellhammer
IPC: H01L33/00 , H01L25/16 , H01L33/62 , H01L33/48 , H01L33/06 , H01L33/22 , H01L31/0352 , H01L31/0236 , H01L33/32 , H01L25/075 , H01L31/02 , H01L27/146
CPC classification number: H01L33/0025 , H01L25/0753 , H01L25/167 , H01L27/14687 , H01L31/02 , H01L31/0236 , H01L31/035209 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/0002 , Y02E10/50 , H01L2924/00
Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.
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公开(公告)号：US20170207366A1
公开(公告)日：2017-07-20
申请号：US15474786
申请日：2017-03-30
Applicant: Micron Technology, Inc.
Inventor： Vladimir Odnoblyudov , Martin F. Schubert
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/38 , H01L33/483 , H01L33/62 , H01L2933/0016
Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.
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Patent Agency Ranking
公开(公告)号：US09711701B2
公开(公告)日：2017-07-18
申请号：US15082764
申请日：2016-03-28
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert
CPC classification number: H01L33/62 , H01L27/153 , H01L31/02005 , H01L31/03044 , H01L31/03048 , H01L33/0012 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/00
Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.
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97.发明授权Devices, systems, and methods related to removing parasitic conduction in semiconductor devices 有权与去除半导体器件中的寄生导通相关的器件，系统和方法公开(公告)号：US09577058B2
公开(公告)日：2017-02-21
申请号：US14796974
申请日：2015-07-10
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Cem Basceri , Thomas Gehrke
IPC: H01L29/15 , H01L29/423 , H01L29/205 , H01L29/06 , H01L29/778 , H01L29/20 , H01L29/417
CPC classification number: H01L29/42316 , H01L29/0603 , H01L29/2003 , H01L29/205 , H01L29/4175 , H01L29/7786 , H01L29/7787 , H01L2224/16227
Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.
Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料堆叠和外延衬底进一步限定包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。
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公开(公告)号：US20160343912A1
公开(公告)日：2016-11-24
申请号：US15227198
申请日：2016-08-03
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Lifang Xu
CPC classification number: H01L33/382 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/502 , H01L33/56 , H01L2933/0016
Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.
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公开(公告)号：US09444014B2
公开(公告)日：2016-09-13
申请号：US14614247
申请日：2015-02-04
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov
CPC classification number: H01L33/382 , H01L33/0075 , H01L33/06 , H01L33/36 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2933/0016 , H01L2924/00014
Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
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公开(公告)号：US20160225967A1
公开(公告)日：2016-08-04
申请号：US15019748
申请日：2016-02-09
Applicant: Micron Technology, Inc.
Inventor： Vladimir Odnoblyudov , Martin F. Schubert
CPC classification number: H01L33/62 , H01L21/78 , H01L25/0753 , H01L27/04 , H01L27/156 , H01L33/0025 , H01L33/005 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/382 , H01L33/405 , H01L33/58 , H01L33/64 , H01L33/642 , H01L33/647 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2933/0075
Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.
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