Metal selenide and metal telluride thin films for semiconductor device applications

    公开(公告)号:US09741815B2

    公开(公告)日:2017-08-22

    申请号:US14741246

    申请日:2015-06-16

    Abstract: In some aspects, methods of forming a metal selenide or metal telluride thin film are provided. According to some methods, a metal selenide or metal telluride thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase selenium or tellurium reactant. In some aspects, methods of forming three-dimensional architectures on a substrate surface are provided. In some embodiments, the method includes forming a metal selenide or metal telluride interface layer between a substrate and a dielectric. In some embodiments, the method includes forming a metal selenide or metal telluride dielectric layer between a substrate and a conductive layer.

    SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
    108.
    发明申请
    SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS 有权
    用于碳化钛薄膜的硅烷和硼砂处理

    公开(公告)号:US20140273510A1

    公开(公告)日:2014-09-18

    申请号:US13829856

    申请日:2013-03-14

    Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

    Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中,包含碳化钛的膜通过原子层沉积(ALD)工艺沉积在衬底上。 该方法可以包括多个沉积循环,其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲,包含金属和碳的第二源化学物质,其中来自第二源化学物质的金属和碳 和第三源化学品,其中第三源化学品是硅烷或硼烷,其至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分。 在一些实施方案中,处理在金属碳化物膜上形成覆盖层。

Patent Agency Ranking