公开(公告)号：US20190013197A1

公开(公告)日：2019-01-10

申请号：US16027783

申请日：2018-07-05

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/34

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：US20180342374A1

公开(公告)日：2018-11-29

申请号：US15858886

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/26 ,  C23C16/455

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.

公开(公告)号：US20180342372A1

公开(公告)日：2018-11-29

申请号：US15858891

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  C23C16/26 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/503 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67103 ,  H05H1/46 ,  H05H2001/463 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas are divided into a plurality of groups of monopole antennas, and the AC power source is configured to generate AC power on a plurality of power supply lines at a plurality of different phases, and different groups of monopole antennas are coupled to different power supply lines.

公开(公告)号：US10128337B2

公开(公告)日：2018-11-13

申请号：US15173234

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Zhong Qiang Hua ,  Chentsau Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/04 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67 ,  H01L21/677

Abstract: Methods for forming fin structures with desired profile and dimensions for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. The methods include a structure reshaping process to reshape a shaped structure, such as a diamond like structure formed on a fin structure. In one embodiment, a method for forming a structure on a substrate includes performing an epitaxial deposition process to form a shaped structure on a fin structure disposed on a substrate, performing a mask layer deposition process to form a mask layer having a first width on the shaped structure, and performing a mask trimming process to trim the mask layer from the first width from a second width.

公开(公告)号：US20180221949A1

公开(公告)日：2018-08-09

申请号：US15941988

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F3/00 ,  B28B1/00 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B23K10/00 ,  H05B3/00

CPC classification number: B22F3/008 ,  B22F2003/1051 ,  B22F2003/1057 ,  B22F2998/10 ,  B23K10/006 ,  B23K10/027 ,  B28B1/001 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  H05B3/0061

Abstract: An additive manufacturing system includes a platen, a dispenser configured to deliver a powder in a linear region that extends across less than all of a width of the platen, a drive system configured to move the dispenser along the first axis and a perpendicular second axis, a controller, and an energy source configured to selectively fuse a layer of powder. The controller is configured to cause the drive system to move the dispenser along the second axis a first time such that the linear region makes a first sweep along the second axis to deposit the powder in a first swath over the platen, thereafter along the first axis, and thereafter along the second axis a second time such that the first linear region makes a second sweep along the second axis to deposit the powder in a parallel second swath over the platen.

公开(公告)号：US09947539B2

公开(公告)日：2018-04-17

申请号：US15658266

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/027 ,  H01L21/285

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.

公开(公告)号：US20170323778A1

公开(公告)日：2017-11-09

申请号：US15658266

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/027 ,  H01L21/285

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.

公开(公告)号：US09773675B2

公开(公告)日：2017-09-26

申请号：US15432368

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/033 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L21/3105 ,  H01L27/108 ,  H01L27/12

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US09754791B2

公开(公告)日：2017-09-05

申请号：US14680879

申请日：2015-04-07

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Yin Fan ,  Ellie Y. Yieh ,  Srinivas D. Nemani

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/768 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/455 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/28562 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31155 ,  H01L21/76879

Abstract: Methods for selectively depositing different materials at different locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on. Ion implantation processes may be used to modify materials disposed on the substrate. The ions modify surface properties of the substrate to enable the subsequent selective deposition process. A substrate having a mask disposed thereon may be subjected to an on implantation process to modify the mask and surfaces of the substrate exposed by the mask. The mask may be removed which results in a substrate having regions of implanted and non-implanted materials. A subsequent deposition process may be performed to selectively deposit on either the implanted or non-implanted regions of the substrate.

公开(公告)号：US20170182556A1

公开(公告)日：2017-06-29

申请号：US15327281

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Jennifer Y. Sun ,  Thomas B. Brezoczky ,  Christopher A. Rowland ,  Srinivas D. Nemani ,  Swaminathan Srinivasan ,  Simon Yavelberg ,  Ellie Y. Yieh ,  Hou T. Ng

IPC: B22F3/105 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y50/02 ,  B28B17/00 ,  B23K26/70 ,  B23K26/14 ,  B29C67/00 ,  B28B1/00 ,  B33Y10/00 ,  B23K26/342

CPC classification number: B22F3/1055 ,  B22F1/0088 ,  B22F2003/1056 ,  B22F2003/1057 ,  B23K26/1464 ,  B23K26/342 ,  B23K26/702 ,  B28B1/001 ,  B28B17/0081 ,  B29C64/153 ,  B29C64/20 ,  B29C64/386 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y50/02 ,  Y02P10/295

Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.