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133 条记录 (耗时 0.036 秒)

    Ordered interface texturing for a light emitting device
    102.
    发明授权
    Ordered interface texturing for a light emitting device 失效
    用于发光器件的有序接口纹理

    公开(公告)号：US5779924A

    公开(公告)日：1998-07-14

    申请号：US620518

    申请日：1996-03-22

    申请人： Michael R. Krames ,  Fred A. Kish, Jr.

    发明人： Michael R. Krames ,  Fred A. Kish, Jr.

    IPC分类号： H01L33/20 ,  H01L33/22 ,  B44C1/22

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38

    摘要： This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus improve the performance of the device. Ordered interface texturing offers an improvement in light extraction by increasing the transmission of total optical power from the device into the ambient. This improvement is possible because ordered interface texturing can provide: 1) a reduction in Fresnel losses at the interface between the device and the ambient and, 2) a change or increase in the angular bandwidth of light which may transmit power into the ambient. This latter effect may be thought of a change or increase in the escape cone at an interface. Both effects can result in an overall increase in total light extraction efficiency for the LED.

    摘要翻译： 该方法涉及具有至少一个有序纹理界面的半导体发光器件的制造。 在这种设备的任何或所有接口上提供具有有序模式的受控接口纹理，以增强从这些接口的光提取，从而提高设备的性能。 有序的界面纹理通过增加从设备到环境中的总光功率的传输来提供光提取的改进。 这种改进是可能的，因为有序的界面纹理可以提供：1）在设备和环境之间的接口处减少菲涅尔损耗，以及2）可以将功率传输到环境中的光的角度带宽的改变或增加。 后一种效应可以被认为在界面处的逃避锥的变化或增加。 这两种效应可以导致LED的总光提取效率的总体增加。

    Laminated upper cladding structure for a light-emitting device
    103.
    发明授权
    Laminated upper cladding structure for a light-emitting device 失效
    用于发光器件的层压上包层结构

    公开(公告)号：US5400354A

    公开(公告)日：1995-03-21

    申请号：US193681

    申请日：1994-02-08

    申请人： Michael Ludowise ,  Nick Holonyak, Jr. ,  Stephen J. Caracci ,  Michael R. Krames ,  Fred A. Kish

    发明人： Michael Ludowise ,  Nick Holonyak, Jr. ,  Stephen J. Caracci ,  Michael R. Krames ,  Fred A. Kish

    IPC分类号： H01L21/338 ,  H01L21/74 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L33/30 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01L29/513 ,  H01L21/746 ,  H01L21/8252 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/66863 ,  H01L33/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/2214 ,  H01S5/32391

    摘要： A fabrication method for providing a semiconductor light-emitting device includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer and an active region for generating lightwaves. A laminated cladding structure is formed on the active region. The laminated cladding structure includes a lower layer that is substantially aluminum-free to inhibit oxidation and includes an upper layer that is aluminum-bearing in order to promote oxidation. The upper layer of the lamination is oxidized along selected first regions and is selectively masked to prevent oxidation for second regions. The oxidation of the first region is carried out under conditions such that a native oxide is formed throughout the thickness of the first regions. Electrical current to the active region for operating the light-emitting device is channeled via the unoxidized region of the upper layer of the lamination. In a preferred embodiment, the device is an InGaAsP-AlInAs-InP laser. Other electronic devices, such as FETs, can be also formed using the top-down approach. Preferably, oxidation is limited to an upper III-V semiconductor layer by forming a lower III-V semiconductor layer that includes In and/or P. Lateral oxidation can also be realized using this approach.

    摘要翻译： 一种用于提供半导体发光器件的制造方法包括在半导体衬底上生长多个层，包括形成下覆盖层和用于产生光波的有源区。 在有源区上形成层叠包层结构。 层压包覆结构包括基本上不含铝的下层以抑制氧化，并且包括为了促进氧化而成为铝的上层。 叠层的上层被沿选定的第一区氧化，并被选择性地掩蔽以防止第二区的氧化。 第一区域的氧化在使得在第一区域的整个厚度上形成天然氧化物的条件下进行。 通过层压的上层的未氧化区域引导到用于操作发光器件的有源区的电流。 在优选实施例中，器件是InGaAsP-AlInAs-InP激光器。 也可以使用自顶向下的方法形成诸如FET的其它电子器件。 优选地，通过形成包括In和/或P的下III-V半导体层，氧化被限制在上III-V半导体层。也可以使用这种方法实现侧向氧化。

    Contact for a semiconductor light emitting device
    105.
    发明授权
    Contact for a semiconductor light emitting device 有权
    接触半导体发光器件

    公开(公告)号：US08679869B2

    公开(公告)日：2014-03-25

    申请号：US13423625

    申请日：2012-03-19

    申请人： Rafael I. Aldaz ,  John E. Epler ,  Patrick N. Grillot ,  Michael R. Krames

    发明人： Rafael I. Aldaz ,  John E. Epler ,  Patrick N. Grillot ,  Michael R. Krames

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/405 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.

    摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。 该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。 电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。 半导体结构通过触点连接到安装座。 从半导体结构去除生长衬底，并且省略厚的透明衬底，使得器件中的半导体层的总厚度小于15μm，在一些实施例中为一些实施例，小于10μm。 半导体结构的顶侧可以是纹理的。

    Series connected flip chip LEDs with growth substrate removed
    107.
    发明授权
    Series connected flip chip LEDs with growth substrate removed 有权
    串联连接的倒装芯片LED与生长衬底被去除

    公开(公告)号：US08450754B2

    公开(公告)日：2013-05-28

    申请号：US13269669

    申请日：2011-10-10

    申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    IPC分类号： H01L29/18

    CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

    摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

    摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。