公开(公告)号：US20170167010A1

公开(公告)日：2017-06-15

申请号：US15443272

申请日：2017-02-27

Applicant: Hauzer Techno Coating BV

Inventor： Frank Papa ,  Roel Tietema ,  Ivan Kolev ,  Ruud Jacobs

IPC: C23C14/06 ,  H01J37/34 ,  C23C14/54 ,  C23C14/34 ,  C23C14/35

CPC classification number: C23C14/0635 ,  C23C14/0605 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/3476

Abstract: An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates, which includes a vacuum chamber, which is connectable to an inert gas source and a vacuum pump, a support device in the vacuum chamber, at least one graphite cathode having an associated magnet arrangement forming a magnetron that serves as a source of carbon material, a bias power supply for applying a negative bias voltage to the substrates on the support device, at least one cathode power supply for the cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.

公开(公告)号：US09593410B2

公开(公告)日：2017-03-14

申请号：US13785880

申请日：2013-03-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhenbin Ge ,  Alan A. Ritchie

IPC: C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/54 ,  C23C14/3471 ,  C23C14/35 ,  H01J37/32165 ,  H01J37/32403 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J37/3476

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，物理气相沉积室包括具有第一基本频率并且耦合到目标或基板支架之一的第一RF电源; 以及具有第二基本频率并耦合到所述目标或所述衬底支架之一的第二RF电源，其中所述第一和第二基本频率是彼此的整数倍，其中所述第二基本频率被修改为偏移的第二基本频率 这不是第一个基本频率的整数倍。

公开(公告)号：US20170040151A1

公开(公告)日：2017-02-09

申请号：US15286354

申请日：2016-10-05

Applicant: Tionesta Applied Research Corporation

Inventor： Anthony Zuppero ,  William David Jansen ,  Craig V. Bishop ,  Thomas J. Dolan ,  Paul Crone ,  William J. Saas

IPC: H01J37/34

CPC classification number: H01J37/3476 ,  G21B3/004 ,  G21G7/00 ,  H01J37/3464

Abstract: Use of adsorption, desorption, particle injection and other means to excite electrons to a region on their band structure diagram near an inflection point were the transient effective mass is elevated proportional to the inverse of curvature. These transient heavy electrons may then cause transmutations similar to transmutations catalyzed by the muons used by Alvarez at UC Berkeley during 1956 in liquid hydrogen. The heavy electrons may also control chemical reactions.

Abstract translation: 使用吸附，解吸，粒子注入等手段将电子激发到其拐点附近的带结构图上的区域，瞬态有效质量与曲率倒数成正比。 然后这些瞬态重电子可能引起类似于阿尔瓦雷斯在加州大学伯克利分校在1956年液体氢气中使用的μ子的变化的变化。 重电子也可以控制化学反应。

公开(公告)号：US20170029936A1

公开(公告)日：2017-02-02

申请号：US15219975

申请日：2016-07-26

Applicant: Zond, Inc.

Inventor： Roman Chistyakov

IPC: C23C14/35 ,  H01L21/02 ,  C23C14/54 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/228 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/542 ,  H01J37/3266 ,  H01J37/32697 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3455 ,  H01J37/3467 ,  H01J37/3476 ,  H01L21/02266

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-Ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

Abstract translation: 描述了用于高沉积溅射的方法和装置。 溅射源包括邻近阳极定位的阳极和阴极组件。 阴极组件包括溅射靶。 电离源产生靠近阳极和阴极组件的弱离子化等离子体。 电源在阳极和阴极组件之间产生电场，从弱离子化等离子体产生强电离等离子体。 强电离等离子体包括冲击溅射靶的第一多个离子，以在溅射靶中产生足够的热能，使得溅射靶的溅射产率与溅射靶的温度非线性相关。

公开(公告)号：US20170004995A1

公开(公告)日：2017-01-05

申请号：US15125726

申请日：2016-02-24

Applicant: ULVAC, INC.

Inventor： Keiichiro Asakawa ,  Junichi Hamaguchi ,  Kazuhiro Sonoda ,  Yukinobu Numata ,  Yutaka Kokaze

IPC: H01L21/768 ,  C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01L21/76867 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/5826 ,  H01J37/32036 ,  H01J37/32366 ,  H01J37/32403 ,  H01J37/32477 ,  H01J37/32513 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3476 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865

Abstract: Provided is a film forming apparatus in which a thin film can be formed with a good coverage on the inner surface of a hole with high aspect ratio by preventing the negative electric charges from getting concentrated on the substrate edge portion at the time of etching processing. The film forming apparatus is provided with: a vacuum chamber in which a target is disposed; a stage for holding a substrate inside the vacuum chamber; a first electric power for applying predetermined electric power to the target; and a second electric power for applying AC power to the stage. The film forming apparatus performs: film forming processing in which the target is sputtered by applying electric power to the target by the first electric power; and etching processing in which a thin film formed on the substrate is etched by applying AC power to the stage by the second electric power.

Abstract translation: 提供一种成膜装置，其中通过防止在蚀刻处理时负电荷集中在基板边缘部分上，可以在具有高纵横比的孔的内表面上形成具有良好覆盖的薄膜。 成膜装置设有：设置有靶的真空室; 在真空室内保持基板的台阶; 用于向所述目标施加预定电力的第一电力; 以及用于向舞台施加AC电力的第二电力。 成膜装置执行：通过利用第一电​​力向靶子施加电力来溅射目标物的成膜处理; 以及蚀刻处理，其中通过利用第二电力向平台施加AC电力来蚀刻形成在基板上的薄膜。

公开(公告)号：US20160289815A1

公开(公告)日：2016-10-06

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  RHONDA HYNDMAN ,  AMIT RASTOGI ,  EDUARDO PAULO LIMA ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  SCOTT HAYMORE ,  DANIEL COOK

IPC: C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/0641 ,  C23C14/0617 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3476

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract translation: 一种方法是通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上。 在该方法中，溅射材料从靶溅射，其中靶和衬底间隔2.5至10cm的间隔，并且在室内产生二次磁场，这引起由脉冲DC产生的等离子体 磁控管装置朝向腔室的一个或多个壁膨胀。

公开(公告)号：US20160247667A1

公开(公告)日：2016-08-25

申请号：US15045639

申请日：2016-02-17

Applicant: CANON ANELVA CORPORATION

Inventor： Yohsuke Shibuya

IPC: H01J37/34 ,  B08B7/00 ,  C23C14/34

CPC classification number: H01J37/3476 ,  B08B7/00 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/3482 ,  H01J37/3485

Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

Abstract translation: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括：能够在目标表面上形成磁场的磁体单元; 能够驱动磁体单元来改变磁场图形的旋转系统; 以及电流计，被配置为当由磁体单元形成磁场时测量目标电流，并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置，并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁，从而可以仅对必需的部分执行清洁。

公开(公告)号：US20160209723A1

公开(公告)日：2016-07-21

申请号：US15086438

申请日：2016-03-31

Applicant: View, Inc.

Inventor： Robert T. Rozbicki

IPC: G02F1/153 ,  G02F1/1333 ,  G02F1/13 ,  H01J37/34 ,  C23C14/06 ,  C23C14/02 ,  C23C14/34 ,  G02F1/155 ,  C23C14/08

CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

公开(公告)号：US20160168686A1

公开(公告)日：2016-06-16

申请号：US14902575

申请日：2014-06-30

Applicant: Oerlikon Surface Solutions AG, Trübbach

Inventor： Denis Kurapov ,  Siegfried Krassnitzer

IPC: C23C14/00 ,  H01J37/34 ,  C23C14/14 ,  C23C14/35

CPC classification number: C23C14/0042 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3467 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/006 ,  H01J2237/24585 ,  H01J2237/3323

Abstract: A method for performing reactive sputtering processes while maintaining the sputtering characteristic at: the target as well as the deposition rate constant, or at least in an acceptable range for the industrial production context, independent of the target age.

Abstract translation: 在与目标年龄无关的同时，将溅射特性保持在目标以及沉积速率常数或至少在工业生产环境的可接受范围内的方法。

公开(公告)号：US20160109502A1

公开(公告)日：2016-04-21

申请号：US14886425

申请日：2015-10-19

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Hideo Kato ,  Kazunori Funazaki ,  Eiji Takahashi

IPC: G01R31/25

CPC classification number: G01R31/255 ,  H01J37/3288 ,  H01J37/32926 ,  H01J37/3405 ,  H01J37/3476

Abstract: A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

Abstract translation: 可以高精度地检查磁控管。 基于当前参数之间的比较来确定磁控管的寿命，当前参数表示磁控管的当前状态，并且从用于指定磁控管的当前状态的一个或多个测量值获得， 开始通过磁控管产生高频功率之后经过了预定持续时间以上的时间段，并且逐行波功率和设定功率之间的差异等于或低于第一预定值和功率 反射波等于或低于第二预定值，以及初始参数，其指示磁控管的初始状态并对应于当前参数。