公开(公告)号：US20180337057A1

公开(公告)日：2018-11-22

申请号：US15597973

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US20180337021A1

公开(公告)日：2018-11-22

申请号：US16000469

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

公开(公告)号：US09978564B2

公开(公告)日：2018-05-22

申请号：US14853838

申请日：2015-09-14

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  H01J37/32 ,  B05B1/00 ,  C23C16/452

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20180096865A1

公开(公告)日：2018-04-05

申请号：US15285214

申请日：2016-10-04

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber housing may include a lid. The chamber may include a pedestal configured to support a substrate within a processing region of the chamber. The chamber may also include a first showerhead coupled with an electrical source. The first showerhead may be positioned within the semiconductor processing chamber between the lid and the processing region. The chamber may also include a first dielectric faceplate positioned within the semiconductor processing chamber between the first showerhead and the processing region. The chamber may include a second showerhead coupled with electrical ground and positioned within the semiconductor processing chamber between the first dielectric faceplate and the processing region. The chamber may further include a second dielectric faceplate positioned within the semiconductor processing chamber between the first dielectric faceplate and the second showerhead.

公开(公告)号：US20180096818A1

公开(公告)日：2018-04-05

申请号：US15285176

申请日：2016-10-04

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/305 ,  H01J37/30

CPC classification number: H01J37/3053 ,  H01J37/3002 ,  H01J37/3178 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/3244 ,  H01J2229/882 ,  H01L21/3065

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

公开(公告)号：US09934942B1

公开(公告)日：2018-04-03

申请号：US15285176

申请日：2016-10-04

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/32 ,  H05H1/30 ,  H01L21/30 ,  H01J37/305 ,  H01J37/30 ,  H01L21/3065

CPC classification number: H01J37/3053 ,  H01J37/3002 ,  H01J37/3178 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/3244 ,  H01J2229/882 ,  H01L21/3065

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

公开(公告)号：US09874524B2

公开(公告)日：2018-01-23

申请号：US15061769

申请日：2016-03-04

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Junghoon Kim ,  Soonwook Jung ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01J3/44 ,  G01N21/68 ,  H01J37/10 ,  H01J37/32

CPC classification number: G01N21/68 ,  G01J3/0208 ,  G01J3/0229 ,  G01J3/0237 ,  G01J3/0289 ,  G01J3/06 ,  G01J3/443 ,  G01N21/73 ,  G01N2201/0638 ,  G01N2201/068 ,  H01J37/10 ,  H01J37/32458 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J2237/103 ,  H01J2237/3341

Abstract: Implementations of the present disclosure relate to a plasma chamber having an optical device for measuring emission intensity of plasma species. In one implementation, the plasma chamber includes a chamber body defining a substrate processing region therein, the chamber body having a sidewall, a viewing window disposed in the sidewall, and a plasma monitoring device coupled to the viewing window. The plasma monitoring device includes an objective lens and an aperture member having a pinhole, wherein the aperture member is movable relative to the objective lens by an actuator to adjust the focal point in the plasma using principles of optics, allowing only the light rays from the focal point in the plasma to reach the pinhole. The plasma monitoring device therefore enables an existing OES (coupled to the plasma monitoring device through an optical fiber) to monitor emission intensity of the species at any specific locations of the plasma.

公开(公告)号：US09773648B2

公开(公告)日：2017-09-26

申请号：US14468066

申请日：2014-08-25

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C14/32 ,  H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

公开(公告)号：US20170236691A1

公开(公告)日：2017-08-17

申请号：US15581357

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  B05B1/18 ,  H01L21/67 ,  B05B1/00 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20170229289A1

公开(公告)日：2017-08-10

申请号：US15581396

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01J37/32357 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.