Abstract:
Methods for creating redistribution layers for only selected dice, such as known good dice, to form relatively thin semiconductor component assemblies and packages, and the assemblies and packages created by the methods, are disclosed. A sacrificial layer is deposited on a support substrate. An etch stop layer having a lower etch is deposited on the sacrificial layer. Redistribution lines in a dielectric material are formed on the support substrate on the etch stop layer. Semiconductor dice, either singulated or at the wafer level, are connected to the redistribution lines. The assembly may be scribed to allow the sacrificial layer to be etched to enable removal of the semiconductor dice and associated redistribution layer from the support substrate. The etch stop layer is removed to allow access to the redistribution lines for conductive bumping.
Abstract:
An apparatus and method for preventing damage to tape attachment semiconductor assemblies due to encapsulation filler particles causing damage to a semiconductor die active surface and/or to a corresponding semiconductor substrate surface by providing an adhesive tape which extends across areas of contact between the semiconductor die active surface and the semiconductor substrate. The present invention also includes extending the adhesive tape beyond the areas of contact between the semiconductor die active surface and the semiconductor substrate to provide a visible surface of visual inspection of proper adhesive tape placement.
Abstract:
An electronic device package comprises a substrate, a die, and a material having a Young's modulus of between about 0.1 megapascals and about 20 megapascals (at a solder reflow temperature) for attaching the die to the substrate. In one embodiment, the package utilizes a material having a Young's modulus of between about 0.1 megapascals and about 20 megapascals (at a solder reflow temperature) for attaching the die to the substrate. In an alternate embodiment, the package utilizes a material having a coefficient of thermal expansion α2 of less than about 400 (four-hundred) ppm (parts per million)/° C. for attaching the die to the substrate. In another alternate embodiment, the package utilizes a rigid material for attaching the die to the substrate.
Abstract:
A method and apparatus for achieving a level exposed surface of a viscous material pool for applying viscous material to at least one semiconductor component by contacting at least a portion of the semiconductor component with viscous material within a reservoir. A level viscous material exposed surface is achieved by using at least one mechanism in association with the reservoir. The mechanism is configured to level the exposed surface of viscous material and maintain the exposed surface at a substantially constant level. The reservoir may be shaped such that the exposed surface of viscous material is supplied to a precise location.
Abstract:
Manufacture of stacked microelectronic devices is facilitated by producing subassemblies wherein adhesive pads are applied to the back surfaces of a plurality of microelectronic components in a batch fashion. In one embodiment, an adhesive payer is applied on a rear surface of a wafer. A plurality of spaced-apart adhesive pads are defined within the adhesive layer. Each adhesive pad may cover less than the entire back surface area of the component to which it is attached. A mounting member (e.g., dicing tape) may be attached to the adhesive layer and, in some embodiments, the adhesive layer may be treated so that the mounting member is less adherent to the adhesive pads than to other parts of the adhesive layer, easing removal of the adhesive pads with the microelectronic components.
Abstract:
Certain methods of the invention permit spacerless manufacture of stacked microelectronic devices by mechanically supporting a second microelectronic component with a wire coating. This wire coating may be sufficiently adhesive to also mechanically bond the second microelectronic component to a first microelectronic component. Other embodiments of the invention provide spacerless stacked microelectronic devices wherein a second microelectronic component is mechanically supported by a wire coating.
Abstract:
Manufacture of stacked microelectronic devices is facilitated by producing subassemblies wherein adhesive pads are applied to the back surfaces of a plurality of microelectronic components in a batch fashion. In one embodiment, an adhesive payer is applied on a rear surface of a wafer. A plurality of spaced-apart adhesive pads are defined within the adhesive layer. Each adhesive pad may cover less than the entire back surface area of the component to which it is attached. A mounting member (e.g., dicing tape) may be attached to the adhesive layer and, in some embodiments, the adhesive layer may be treated so that the mounting member is less adherent to the adhesive pads than to other parts of the adhesive layer, easing removal of the adhesive pads with the microelectronic components.
Abstract:
Methods for applying a dielectric protective layer to a wafer in wafer-level chip scale package manufacture. A flowable dielectric protective material with fluxing capability is applied over the active surface of an unbumped semiconductor wafer to cover active device areas, bond pads, test socket contact locations, and optional pre-scribed wafer street trenches. Preformed solder balls are then disposed over the bond pads, and the wafer is subjected to a heating process to reflow the solder balls and at least partially cure the dielectric protective material. During the heating process, the dielectric protective material provides a fluxing capability to enable the solder balls to wet the bond pads. In other exemplary embodiments, the dielectric protective material is applied over only intended physical contact locations and/or pre-scribed wafer street trenches, in which case the dielectric protective material need not include flux material and may additionally include a filler material.
Abstract:
The subject invention is directed to use of photoconductors as conductors of light to photo diodes in a CMOS chip, wherein said photoconductors are separated by at least one low refractive index material (i.e. air). The present invention offers advantages over previous CMOS imaging technology, including enhanced light transmission to photo diodes. The instant methods for producing a CMOS imaging device and CMOS imager system involve minimal power loss. Since no lens is required, the invention eliminates concerns about radius limitation and about damaging lenses during die attach, backgrind, and mount. The invention also provides little or no cross talk between photo diodes.
Abstract:
A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.