Abstract:
Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.
Abstract:
The instruction code including an instruction code stored in the area where the encrypted instruction code is stored in a non-rewritable format is authenticated using a specific key which is specific to the core where the instruction code is executed or an authenticated key by a specific key to perform an encryption processing for the input and output data between the core and the outside.
Abstract:
In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell.
Abstract:
A transmission circuit includes a driver circuit that includes: a transistor to regulate output impedance, and a switching circuit that is connected to the transistor to regulate output impedance and switches an output polarity for differential output; and a bias circuit that includes: a first replica circuit including another transistor corresponding to the transistor to regulate output impedance, the bias circuit generating a gate voltage so as to make a current-voltage characteristic of the transistor to regulate output impedance correspond to a first output impedance value, and supply the gate voltage to a gate of the transistor to regulate output impedance.
Abstract:
A strobe signal from a memory is delayed through delay circuits of a strobe delay selection section, thus obtaining a plurality of delayed strobe signals. A strobe latch section produces check data in synchronism with each of the delayed strobe signals, and a system latch section latches, with a system clock, check data latched by the strobe latch section. Based on a comparison by an expected value comparison section and a determination by a delay determination section, the optimal strobe signal with the optimal delay is selected from among the delayed strobe signals produced in the strobe delay selection section. Then, data from the memory is delayed through delay circuits in a data delay selection section, thus obtaining a plurality of delayed data, and the optimal data with the optimal delay is selected from among the plurality of delayed data based on the comparison by the expected value comparison section and the determination by the delay determination section.
Abstract:
A semiconductor device includes a first semiconductor region that has an external profile including at least one corner, and that includes a semiconductor of a first conductivity type, and a first insulation region that surrounds an outer periphery of the first semiconductor region, and that includes an insulator that, at a corner portion corresponding to the corner, has a depth deeper than a depth at a location other than the corner portion. The semiconductor device further includes a second semiconductor region that surrounds an outer periphery of the first insulation region, and that includes a semiconductor of a second conductivity type, and a second insulation region that surrounds an outer periphery of the second semiconductor region, and that includes an insulator that is deeper than the depth of the first insulation region at the location other than the corner portion.
Abstract:
A time-interleaved analog-to-digital converter that samples an analog input signal at a sampling frequency and converts the analog input signal into a digital output signal is enabled to perform correction processing on an error by: converting the analog input signal into the digital output signal by a plurality of analog-to-digital conversion circuits in a time-interleaved manner; and performing gain correction processing and skew correction processing with respect to the analog-to-digital conversion circuit, on the basis of a mixed signal, the mixed signal being obtained by mixing an output signal from the analog-to-digital conversion circuit with a signal made by shifting a phase of the output signal by π/2.
Abstract:
A processor includes a plurality of processing units. A plurality of first arbitration units each arbitrate request signals output from at least two of the processing units to generate a first arbitration signal. A second arbitration unit arbitrates first arbitration signals output from the first arbitration units to generate a second arbitration signal. A plurality of clock controllers, arranged in correspondence with the first arbitration units, each generate a clock signal supplied to a corresponding first arbitration unit and the processing units coupled to the corresponding first arbitration unit. A control unit determines whether or not to operate each processing unit in accordance with an operation state of the processor and generates control information according to the determination result. Each of the clock controllers supplies or stops the clock signal or changes a frequency of the clock signal in accordance with the control information.
Abstract:
A high-resistance region is formed right under a seal ring by irradiating a semiconductor substrate with hydrogen ions or helium ions. The high-resistance region has a greater thickness than an isolation insulating layer formed as a shallow trench isolation (STI) region on the surface of the semiconductor substrate. As a result, a semiconductor integrated circuit including a seal ring achieving excellent high-frequency isolation is provided.
Abstract:
A CDR control circuit detects a phase shift of input data that is taken in with a phase-adjusted clock, and generates phase control data that controls the phase of the clock based on the detected phase shift, the CDR control circuit includes a change detection circuit that detects an over-change in the phase shift; and a selection circuit that outputs the phase shift before the change, which is the phase shift before the time of detection of the over-change, as the phase shift for a predetermined period of time at the time of detection of the over-change, wherein during the predetermined period of time, the phase control data is generated based on the phase shift before change.