公开(公告)号：US20170092533A1

公开(公告)日：2017-03-30

申请号：US14957380

申请日：2015-12-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Tapash Chakraborty ,  Mark Saly ,  Rana Howlader ,  Eswaranand Venkatasubramanian ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  David Thompson

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L21/76802 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0226 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the exposed metal portion and the tail moiety extending away from the patterned substrate and reducing the deposition rate of the patterned layer above the exposed metal portion relative to the deposition rate of the patterned layer above the exposed dielectric portion. A dielectric layer is subsequently deposited by atomic layer deposition (ALD) which cannot initiate in regions covered with the SAM in embodiments.

公开(公告)号：US20170062224A1

公开(公告)日：2017-03-02

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/08

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L29/7869

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract translation: 处理方法包括将基底暴露于任选的成核促进剂，随后连续暴露包含金属卤化物化合物和第二反应气体的第一反应气体，以在基底上形成金属膜。

公开(公告)号：US20170022609A1

公开(公告)日：2017-01-26

申请号：US15215041

申请日：2016-07-20

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  David Thompson

IPC: C23C16/455 ,  C07F11/00

CPC classification number: C07F11/005 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/42 ,  C23C16/45553

Abstract: Tungsten precursors represented by the formula W(ND)x(DAD)yRz, where each ND is a neutral donor, each DAD is a diazadiene, each R is an anionic or dianionic ligand and x is in the range of 0 to 4, y is in the range of 1 to 3, z is in the range of 0 to 4 and x+z is greater than or equal to 1. Methods of depositing a film using the tungsten precursors are provided.

Abstract translation: 由式W（ND）x（DAD）yRz表示的钨前体，其中每个ND是中性供体，每个DAD是二氮烯，每个R是阴离子或双阴离子配体，x在0至4的范围内，y 在1至3的范围内，z在0至4的范围内，x + z大于或等于1.提供了使用钨前体沉积膜的方法。

公开(公告)号：US20170016113A1

公开(公告)日：2017-01-19

申请号：US15210352

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

IPC: C23C16/455

CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

Abstract translation: 通过将基底表面暴露于第一前体和反应物来沉积含金属膜的方法，其中第一前体和反应物中的一种或多种包含具有通式M（XR 3）2， M（XR3）3，M（XR3）4，M（XR3）5和M（XR3）6，其中M选自Al，Ti，Ta，Zr，La，Hf，Ce，Zn，Cr ，Sn，V及其组合，每个X是C，Si和Ge中的一个或多个，并且每个R独立地是甲基或乙基，并且基本上不包含β-H。

公开(公告)号：US20160293449A1

公开(公告)日：2016-10-06

申请号：US15177726

申请日：2016-06-09

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  C23F1/12 ,  H01J37/32

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法。 某些方法包括激活包含至少一种过渡金属的基底表面，其中基底表面的活化包括将基底表面暴露于加热，等离子体，氧化环境或卤化物转移剂以提供活化的基底表面; 以及将活化的底物表面暴露于包含路易斯碱或pi酸的试剂中，以提供包含一个或多个与试剂配位的一个或多个配体配位的过渡金属原子的气相配位络合物。 某些其它方法提供了选自多层衬底的选择性蚀刻，所述多层衬底包括Co层，Cu层和Ni层中的两层或多层。

公开(公告)号：US09449843B1

公开(公告)日：2016-09-20

申请号：US14734222

申请日：2015-06-09

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

IPC: H01L21/3213

CPC classification number: H01L21/32135 ,  C23F1/12

Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

Abstract translation: 描述了从衬底的表面选择性地蚀刻金属和金属氮化物的方法。 蚀刻相对于诸如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅的含硅层选择性地去除金属和金属氮化物。 蚀刻通过包括产生薄的均匀金属氧化物的氧化操作以保形方式去除材料。 然后通过在基板处理区域中将金属氧化物暴露于金属卤素前体而除去薄的均匀金属氧化物。 金属氧化物可以被去除完成，并且一旦去除均匀的金属氧化物层就可能停止蚀刻。 本文所述的蚀刻可用于在高纵横比特征上均匀地修整材料，该特征通常在与间隙内的深度相比间隙开口附近显示更高的蚀刻速率。

公开(公告)号：US20160133460A1

公开(公告)日：2016-05-12

申请号：US15000116

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： David Thompson

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R2N—NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently selected from organosilicons, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.

Abstract translation: 提供了通过原子层沉积工艺沉积包含Si（C）N的膜的方法。 所述方法包括将底物表面暴露于硅前体和包含选自N = N = N-R，R 2 N-NR 2和（R 3 Si）q NH 3-q的化合物的共试剂，其中q具有 1和3之间，每个R独立地选自有机硅，C 1 -C 6取代或未取代的烷烃，支链或非支链烷烃，取代或未取代的烯烃，支链或非支链烯烃，取代或未取代的 取代炔烃，支链或非支链炔烃或取代或未取代的芳烃。

公开(公告)号：US20160104624A1

公开(公告)日：2016-04-14

申请号：US14965349

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/06 ,  H01L21/3205

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract translation: 提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

公开(公告)号：US09177783B2

公开(公告)日：2015-11-03

申请号：US14560517

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson

IPC: C07F7/00 ,  H01L21/02 ,  C07F7/10

CPC classification number: C07F7/10 ,  C23C16/45553 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

Abstract translation: 提供了基于硅环丙烷的化合物及其制备方法。 还提供了在膜沉积工艺中使用所述化合物沉积包含硅的膜的方法。 某些方法包括将基底表面暴露于基于硅环丙烷的前体和各种组合的共试剂中。

公开(公告)号：US09048294B2

公开(公告)日：2015-06-02

申请号：US13860618

申请日：2013-04-11

Applicant: Applied Materials, Inc.

Inventor： Jing Tang ,  Zhefeng Li ,  Paul F. Ma ,  David Thompson

IPC: H01L21/768 ,  C23C16/34 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/76843 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.

Abstract translation: 描述的是含锰膜，以及提供含锰膜的方法。 具有Co，Mn，Ru，Ta，Al，Mg，Cr，Nb，Ti或V的掺杂含锰膜能够提高含锰膜的铜屏障性能。 还描述了提供具有包含硅酸锰的第一层和包含含锰膜的第二层的膜的方法。