公开(公告)号：US08268282B2

公开(公告)日：2012-09-18

申请号：US11758457

申请日：2007-06-05

Applicant: Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

Inventor： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC: H01B1/04

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract translation: 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US07449067B2

公开(公告)日：2008-11-11

申请号：US10700327

申请日：2003-11-03

Applicant: Paul S. Andry ,  Jon A. Casey ,  Raymond R. Horton ,  Chiraq S. Patel ,  Edmund J. Sprogis ,  Brian R. Sundlof

Inventor： Paul S. Andry ,  Jon A. Casey ,  Raymond R. Horton ,  Chiraq S. Patel ,  Edmund J. Sprogis ,  Brian R. Sundlof

IPC: B05C1/00 ,  B05C3/00 ,  B05C3/18

CPC classification number: H01L21/486 ,  H01L23/147 ,  H01L2224/16225 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A method for filling vias, and in particular initially blind vias, in a wafer, and various apparatus for performing the method, comprising evacuating air from the vias; trapping at least a portion of the wafer and a paste for filling the vias between two surfaces; and pressurizing the paste to fill the vias.

Abstract translation: 一种用于在晶片中填充通孔，特别是初始盲孔的方法，以及用于执行该方法的各种装置，包括从通孔排出空气; 捕获晶片的至少一部分和用于在两个表面之间填充通孔的糊状物; 并对该糊状物加压以填充通孔。

公开(公告)号：US07288474B2

公开(公告)日：2007-10-30

申请号：US11544220

申请日：2006-10-10

Applicant: Jon A. Casey ,  Brian R. Sundlof

Inventor： Jon A. Casey ,  Brian R. Sundlof

IPC: H01L21/4763

CPC classification number: H05K3/4061 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/092 ,  H05K2201/068 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A metallization process and material system for metallizing either blind or through vias in silicon, involving forming a low coefficient of thermal expansion composite or suspension, relative to pure metals, such as copper, silver, or gold, and filling the via holes in the silicon with the paste or suspension. The suspensions sinter with minimal bulk shrinkage, forming highly conductive structures without the formation of macroscopic voids. The selected suspension maintains a coefficient of thermal expansion closer to that of silicon.

Abstract translation: 一种金属化工艺和材料系统，用于在硅中金属化盲孔或通孔，涉及相对于纯金属（例如铜，银或金）形成低热膨胀复合材料或悬浮系数，并填充硅中的通孔 用糊或悬浮液。 悬浮液以最小的体积收缩率烧结，形成高导电性结构，而不形成宏观空隙。 所选择的悬架保持更接近于硅的热膨胀系数。

公开(公告)号：US08493746B2

公开(公告)日：2013-07-23

申请号：US12704592

申请日：2010-02-12

Applicant: Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

Inventor： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

IPC: H05K7/00 ,  H05K1/03 ,  H05K1/11 ,  H05K7/10 ,  H01L23/48

CPC classification number: H01B1/02 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/36 ,  B23K35/3602 ,  B82Y30/00 ,  C22C13/00 ,  H01B13/00 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0209 ,  H05K2201/0257 ,  Y10T29/49117 ,  H01L2924/00

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract translation: 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。

公开(公告)号：US20120211159A1

公开(公告)日：2012-08-23

申请号：US11758457

申请日：2007-06-05

Applicant: Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

Inventor： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC: C09K5/00 ,  C09J5/00 ,  B82Y40/00

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract translation: 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US20110193218A1

公开(公告)日：2011-08-11

申请号：US12700863

申请日：2010-02-05

Applicant: Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

Inventor： Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L24/13 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13101 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.

Abstract translation: 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。

公开(公告)号：US20080202386A1

公开(公告)日：2008-08-28

申请号：US12039309

申请日：2008-02-28

Applicant: Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

Inventor： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC: C09C1/44 ,  C09K5/10

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract translation: 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US20080180927A1

公开(公告)日：2008-07-31

申请号：US11627430

申请日：2007-01-26

Applicant: Paul Coteus ,  Gareth Geoffrey Hougham ,  Brian R. Sundlof

Inventor： Paul Coteus ,  Gareth Geoffrey Hougham ,  Brian R. Sundlof

IPC: H05K7/10 ,  H05K3/30

CPC classification number: H05K3/3436 ,  H01L23/13 ,  H01L23/49805 ,  H01L23/49811 ,  H01L2924/0002 ,  H05K3/28 ,  H05K3/325 ,  H05K3/4007 ,  H05K3/4015 ,  H05K2201/0367 ,  H05K2201/09745 ,  H05K2201/1059 ,  H05K2201/10719 ,  H05K2203/167 ,  Y02P70/613 ,  Y10T29/49126 ,  Y10T29/4913 ,  H01L2924/00

Abstract: A circuit package is provided. The circuit package includes a plurality of electrically conductive pads located on a bottom surface of the circuit package, wherein at least one pad of the plurality of bottom surface pads has a recession for receiving an electrically conductive protrusion located on a substrate to which the circuit package is to be mounted.

Abstract translation: 提供电路封装。 电路封装包括位于电路封装的底表面上的多个导电焊盘，其中多个底表面焊盘中的至少一个焊盘具有用于接收位于基板上的导电突起的凹陷，电路封装 将被安装。

公开(公告)号：US07250675B2

公开(公告)日：2007-07-31

申请号：US10908277

申请日：2005-05-05

Applicant: Benjamin V. Fasano ,  Brian R. Sundlof

Inventor： Benjamin V. Fasano ,  Brian R. Sundlof

IPC: H01L23/34

CPC classification number: H01L25/0657 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01L2924/1627 ,  H01L2924/3025 ,  H01L2224/0401

Abstract: A stacked semiconductor apparatus has at least one die attached to a first side of a carrier substrate. A first circuitized substrate is attached to the first side of the carrier substrate and overlying the at least one die in a manner such that the first circuitized substrate serves as an electrical interconnection device and a heat spreading lid. The first circuitized substrate is further configured so as to facilitate cooling of the at least one die by at least a cross flow of a cooling medium therethrough.

Abstract translation: 叠层半导体装置具有至少一个附着在载体基板的第一侧的管芯。 第一电路化基板被附接到载体基板的第一侧并且以使得第一电路化基板用作电互连装置和散热盖的方式覆盖至少一个管芯。 第一电路化基板被进一步构造成便于通过至少一个冷却介质的横流而使至少一个管芯冷却。

公开(公告)号：US08637392B2

公开(公告)日：2014-01-28

申请号：US12700863

申请日：2010-02-05

Applicant: Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

Inventor： Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

IPC: H01L21/44

CPC classification number: H01L24/13 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13101 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.

Abstract translation: 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。