Abstract:
A stacked semiconductor apparatus has at least one die attached to a first side of a carrier substrate. A first circuitized substrate is attached to the first side of the carrier substrate and overlying the at least one die in a manner such that the first circuitized substrate serves as an electrical interconnection device and a heat spreading lid. The first circuitized substrate is further configured so as to facilitate cooling of the at least one die by at least a cross flow of a cooling medium therethrough.
Abstract:
A stacked semiconductor apparatus has at least one die attached to a first side of a carrier substrate. A first circuitized substrate is attached to the first side of the carrier substrate and overlying the at least one die in a manner such that the first circuitized substrate serves as an electrical interconnection device and a heat spreading lid. The first circuitized substrate is further configured so as to facilitate cooling of the at least one die by at least a cross flow of a cooling medium therethrough.
Abstract:
In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.
Abstract:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
Abstract:
A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
Abstract:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
Abstract:
A circuit package is provided. The circuit package includes a plurality of electrically conductive pads located on a bottom surface of the circuit package, wherein at least one pad of the plurality of bottom surface pads has a recession for receiving an electrically conductive protrusion located on a substrate to which the circuit package is to be mounted.
Abstract:
A multi-layer pillar is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.
Abstract:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
Abstract:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.