公开(公告)号：US10294399B2

公开(公告)日：2019-05-21

申请号：US15398933

申请日：2017-01-05

Applicant: Cabot Microelectronics Corporation

Inventor： Roman Ivanov ,  Fernando Hung Low ,  Cheng-Yuan Ko ,  Glenn Whitener

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.

公开(公告)号：US20190085209A1

公开(公告)日：2019-03-21

申请号：US16131180

申请日：2018-09-14

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. DOCKERY ,  Tyler Carter ,  Matthew E. Carnes ,  Jessica VanKuiken ,  Pankaj Singh

IPC: C09G1/02 ,  C23F1/30 ,  B24B37/04

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

公开(公告)号：US20180298234A1

公开(公告)日：2018-10-18

申请号：US15951358

申请日：2018-04-12

Applicant: Cabot Microelectronics Corporation

Inventor： Lu Tian ,  Ke Zhang ,  Andrew Haerle ,  Hon Wu Lau

IPC: C09G1/02 ,  H01L21/321

Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.

公开(公告)号：US10066126B2

公开(公告)日：2018-09-04

申请号：US14988891

申请日：2016-01-06

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Helin Huang ,  Matthew Carnes ,  Glenn Whitener

IPC: C09K13/00 ,  C09G1/02 ,  C09K13/06 ,  C09G1/04 ,  H01L21/321

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

公开(公告)号：US20180072916A1

公开(公告)日：2018-03-15

申请号：US15564605

申请日：2016-04-13

Applicant: Cabot Microelectronics Corporation

Inventor： Prativa PANDEY ,  Brian REISS ,  Michael WHITE

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/76898

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

公开(公告)号：US09818618B2

公开(公告)日：2017-11-14

申请号：US14700580

申请日：2015-04-30

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Mrzyglod ,  Jayakrishnan Nair ,  Garrett Blake

IPC: B24B37/22 ,  H01L21/306 ,  B24D11/00 ,  B24B37/04 ,  B24B37/24 ,  B24D18/00

CPC classification number: H01L21/30625 ,  B24B37/042 ,  B24B37/22 ,  B24B37/24 ,  B24D11/00 ,  B24D11/001 ,  B24D18/0045

Abstract: The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a top layer, a middle layer and a bottom layer, wherein the top layer and bottom layer are joined together by the middle layer, and without the use of an adhesive. The invention is also directed to a multi-layer polishing pad comprising an optically transmissive region, wherein the layers of the multi-layer polishing pad are joined together without the use of an adhesive.

公开(公告)号：US09771496B2

公开(公告)日：2017-09-26

申请号：US14924997

申请日：2015-10-28

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin Dockery ,  Helin Huang ,  Lin Fu ,  Tina Li

IPC: C09G1/02 ,  B24B37/24 ,  C23F3/04

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

公开(公告)号：US20170190936A1

公开(公告)日：2017-07-06

申请号：US14988891

申请日：2016-01-06

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Helin Huang ,  Matthew Carnes ,  Glenn Whitener

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/3212

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

公开(公告)号：US20170183540A1

公开(公告)日：2017-06-29

申请号：US15394090

申请日：2016-12-29

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Tina LI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

公开(公告)号：US09688885B2

公开(公告)日：2017-06-27

申请号：US14919449

申请日：2015-10-21

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Kristin Hayes ,  Benjamin Petro

IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  B24B37/04 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.