Abstract:
Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
Abstract:
Provided is an optical transceiver module of an optical transceiver, which is used for optical communications. The optical transceiver module prevents electrical crosstalk between a light source and a light receiver. Additionally, the optical transceiver module includes an optical transceiver unit including a light source and a light receiver together integrated into a substrate, a circuit unit including a drive circuit driving the light source and a detect circuit reading a signal of the light receiver, and a crosstalk prevention unit connected between the substrate and ground to prevent electrical crosstalk between the light source and the light receiver.
Abstract:
A method of manufacturing a printed circuit board is disclosed, in which a cavity is formed for embedding a component, which includes: providing a core board, in which an inner circuit is buried; forming a first via in the core board for interlayer conduction; selectively forming a first photoresist in a position on the core board in correspondence with a position of the cavity; stacking a first build-up layer, on which a first outer circuit is formed, on the core board; and selectively removing the first build-up layer in correspondence with the position of the cavity and removing the first photoresist. Utilizing the method, a board can be manufactured with greater precision, as the thickness tolerance of the cavity may be obtained by controlling the thickness of the photoresist, and the overall thickness of the board can be controlled by controlling the height of the cavity.
Abstract:
There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.
Abstract:
A method for forming transcriptional circuits and a method for manufacturing a circuit board are disclosed. A method of forming a transcriptional circuit, which includes forming an intaglio pattern corresponding to a circuit pattern by selectively forming a resist on a mold board, filling conductive material in the intaglio pattern, and transferring the conductive material onto a carrier by pressing the carrier onto the mold board such that the carrier faces the surface of the mold board having the conductive material filled in, makes it possible to form transcriptional circuits that can be transcribed into an insulation board using existing equipment, whereby costs can be reduced.
Abstract:
An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.
Abstract:
Provided are an electro-optic device with a high modulation rate and a mach-zehnder optical modulator having the same. The electro-optic device includes a slap, a rip waveguide, a first impurity region, a second impurity region, and a third impurity region. The slap is disposed on a substrate. The rip waveguide includes a mesa extending in one direction on the slap and the slap disposed under the mesa. The first impurity region is disposed in the slap of one side of the mesa. The third impurity region is disposed in the slap of the other side of the mesa to oppose the first impurity region. The second impurity region is disposed in the rip waveguide between the first impurity region and the third impurity region.
Abstract:
A substrate treating device may include a plating treatment portion configured to perform a plating process of a substrate, a wet treatment portion configured to perform a wet treating process of the substrate, the wet treatment portion being under the plating treatment portion, and a substrate support portion configured to support the substrate so that a plating surface of the substrate faces upward, the substrate support portion being further configured to move the substrate between the plating treatment portion and the wet treatment portion.
Abstract:
Disclosed is a method of manufacturing a printed circuit board. The method of manufacturing a printed circuit board having a via for connecting one layer to another layer can include forming a circuit pattern on one surface of a carrier; processing a hole corresponding to the via on one surface of the carrier; compressing the surface of the carrier into one surface of an insulation body; removing the carrier; processing a via hole on the insulation body, corresponding to a position of the hole; and forming a conductive material in the via hole, to thereby easily process a hole for forming a via and have high design freedom.
Abstract:
A method of manufacturing a circuit board is disclosed. A method of manufacturing a circuit board that includes forming a first circuit pattern on the insulation layer of a carrier, in which an insulation layer and a first seed layer are stacked in order; stacking and pressing the carrier and an insulation board with the side of the carrier having the first circuit pattern facing the insulation board; removing the carrier to transfer the first circuit pattern and the insulation layer onto the insulation board; and forming a second circuit pattern on the insulation layer transferred to the insulation board, allows fine pitch circuit patterns to enable the manufacture of fine circuit patterns of high density on the board, and allows the manufacture of a multi-layer circuit board with a simple process.