利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.028 秒)

    Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
    13.
    发明申请
    Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing 有权
    半导体制造中阻挡材料的MOCVD的前体组成和工艺

    公开(公告)号：US20050042888A1

    公开(公告)日：2005-02-24

    申请号：US10643110

    申请日：2003-08-18

    申请人： Jeffrey Roeder ,  Chongying Xu ,  Bryan Hendrix ,  Thomas Baum

    发明人： Jeffrey Roeder ,  Chongying Xu ,  Bryan Hendrix ,  Thomas Baum

    IPC分类号： B05D3/02 ,  C07F7/10 ,  C07F9/00 ,  C07F11/00 ,  C23C16/34 ,  H01L21/285 ,  H01L21/31 ,  H01L21/469 ,  H01L21/768

    CPC分类号： C23C16/45553 ,  C07F7/10 ,  C07F9/005 ,  C07F11/005 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76841

    摘要： Metalorganic precursors of the formula: (R1R2N)a-bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a-1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1-C4 alkyl, C3-C6 cycloalkyl, and RO3Si, where each R0 can be the same or different and each R0 is independently selected from H and C1-C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

    摘要翻译： 下式的金属有机前体：（R1R2N）a-bMXb其中：M是前体金属中心，选自Ta，Ti，W，Nb，Si，Al和B; a是等于M的化合价数; 1 <= b <=（A-1）; R 1和R 2可以彼此相同或不同，并且各自独立地选自H，C 1 -C 4烷基，C 3 -C 6环烷基和R 3 Si，其中每个R 0可以是 相同或不同，每个R 0独立地选自H和C 1 -C 4烷基; X选自氯，氟，溴和碘。 这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积（MOCVD），例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。 进一步描述了在低温下，例如使用原子层化学气相沉积（ALCVD）在衬底上形成Si 3 N 4的方法。