3D Embedded Redistribution Layers for IC Substrate Packaging

    公开(公告)号:US20230402390A1

    公开(公告)日:2023-12-14

    申请号:US17806660

    申请日:2022-06-13

    Applicant: Apple Inc.

    CPC classification number: H01L23/5383 H01L23/5386 H01L21/4857

    Abstract: Improved redistribution layer structures for integrated circuit or system-on-chip (SoC) packages substrate are disclosed. Via landing pads and via interconnects in the redistribution layers are self-aligning with the centers of the vias aligning with the pads. This self-alignment may allow pads that terminate non-stacked vias to have decreased widths or diameters without extra capture space. The redistribution layers have vias with vertical or near vertical sidewalls. Vias may also have various shapes, widths, or lengths. Traces in the redistribution layers may have various lengths and shapes with lengths that may extend into layers routing the vias to provide increased metal density in the traces.

    Asymmetric Stackup Structure for SoC Package Substrates

    公开(公告)号:US20230092505A1

    公开(公告)日:2023-03-23

    申请号:US17482967

    申请日:2021-09-23

    Applicant: Apple Inc.

    Abstract: An asymmetric stackup structure for an SoC package substrate is disclosed. The package substrate may include a substrate with one or more insulating material layers. A first recess may be formed in an upper surface of the substrate. The recess may be formed down to a conductive layer in the substrate. An integrated passive device may be positioned in the recess. A plurality of build-up layers may be formed on top of the substrate. At least one via path may be formed through the build-up layers and the substrate to connect contacts on the lower surface of the substrate to contacts on the upper surface of the build-up layers.

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