公开(公告)号：US20170096740A1

公开(公告)日：2017-04-06

申请号：US15383556

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US09576809B2

公开(公告)日：2017-02-21

申请号：US14269544

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Jingchun Zhang ,  Anchuan Wang ,  Jie Liu

IPC: H01L21/461 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/3346

Abstract: Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X

Abstract translation: 描述了相对于硅锗选择性地蚀刻硅的方法。 该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。 等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。 对于X

公开(公告)号：US09478432B2

公开(公告)日：2016-10-25

申请号：US14542394

申请日：2014-11-14

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32357 ,  H01J2237/3341

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove an exposed silicon oxide portion faster than a second exposed portion. The inclusion of the oxygen-containing precursor may suppress the second exposed portion etch rate and result in unprecedented silicon oxide etch selectivity.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。 远程等离子体与含氧前体组合起来激发含氟前体。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽或醇组合。 该组合与图案化的异质结构反应以比第二暴露部分更快地去除暴露的氧化硅部分。 含氧前体的包含可以抑制第二暴露部分的蚀刻速率并产生前所未有的氧化硅蚀刻选择性。

公开(公告)号：US20160307771A1

公开(公告)日：2016-10-20

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US09449846B2

公开(公告)日：2016-09-20

申请号：US14607883

申请日：2015-01-28

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Vinod R. Purayath ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/8234 ,  H01L27/115

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/32135 ,  H01L21/823437 ,  H01L27/11582

Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten slabs from one another as needed. The vertically arranged tungsten slabs may form the walls of a trench during manufacture of a vertical flash memory cell. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a remote plasma region. Process parameters are provided which result in uniform tungsten recess within the trench. A low electron temperature is maintained in the substrate processing region to achieve high etch selectivity and uniform removal throughout the trench.

Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 所述方法根据需要将垂直排列的钨板彼此电分离。 在垂直闪存单元的制造期间，垂直布置的钨板可以形成沟槽的壁。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 这些方法包括将电短路钨板暴露于在远程等离子体区域中形成的远程激发的氟。 提供了在沟槽内产生均匀的钨凹槽的工艺参数。 在基板处理区域中保持低电子温度，以实现高蚀刻选择性并且在整个沟槽中均匀地去除。

公开(公告)号：US20160240402A1

公开(公告)日：2016-08-18

申请号：US15139243

申请日：2016-04-26

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32972 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45559 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US09418858B2

公开(公告)日：2016-08-16

申请号：US14314812

申请日：2014-06-25

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065 ,  B44C1/22 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The silicon selectivity also results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The ion suppressor reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 硅选择性也是由位于远程等离子体和基板处理区域之间的离子抑制器的存在引起的。 离子抑制器减少或基本上消除了到达衬底的离子充电物质的数量。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

公开(公告)号：US09412608B2

公开(公告)日：2016-08-09

申请号：US14617779

申请日：2015-02-09

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

公开(公告)号：US09396989B2

公开(公告)日：2016-07-19

申请号：US14164874

申请日：2014-01-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Vinod R. Purayath ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01B13/00 ,  B44C1/22 ,  B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/768 ,  H01L21/762 ,  H01L27/108 ,  H01L21/3065 ,  C23C2/00 ,  H01J37/32

CPC classification number: H01L21/7682 ,  C23C2/006 ,  H01J37/32357 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/76205 ,  H01L27/1087 ,  H01L2221/101

Abstract: Methods are described for forming “air gaps” between adjacent copper lines on patterned substrates. The common name “air gap” will be used interchangeably the more technically accurate “gas pocket” and both reflect a variety of pressures and elemental ratios. The gas pockets may be one or more pores within dielectric material located between copper lines. Adjacent copper lines may be bordered by a lining layer and air gaps may extend from one lining layer on one copper line to the lining layer of an adjacent copper line. The gas pockets can have a dielectric constant approaching one, favorably reducing interconnect capacitance compared with typical low-K dielectric materials.

Abstract translation: 描述了用于在图案化基板上的相邻铜线之间形成“气隙”的方法。 通用名称“气隙”可以互换使用更技术上更精确的“气袋”，并且都反映了各种压力和元素比。 气穴可以是位于铜线之间的电介质材料内的一个或多个孔。 相邻的铜线可以由衬里层界定，并且气隙可以从一条铜线上的一个衬里层延伸到相邻铜线的衬里层。 与典型的低K电介质材料相比，气穴可以具有接近一个的介电常数，有利地减小互连电容。

公开(公告)号：US09355863B2

公开(公告)日：2016-05-31

申请号：US14828311

申请日：2015-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 由此产生的反应物在衬底处于升高的温度下蚀刻具有高钛氧化物选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。