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    High voltage monolithic LED chip
    11.
    发明授权
    High voltage monolithic LED chip 有权

    公开(公告)号：US10797201B2

    公开(公告)日：2020-10-06

    申请号：US16173617

    申请日：2018-10-29

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L31/0256 ,  H01L33/08 ,  H01L33/40 ,  H01L25/075 ,  H01L33/46

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    Compact LED package with reflectivity layer
    12.
    发明授权
    Compact LED package with reflectivity layer 有权

    公开(公告)号：US10424702B2

    公开(公告)日：2019-09-24

    申请号：US14183218

    申请日：2014-02-18

    Applicant: CREE, INC.

    Inventor： Jesse Reiherzer ,  Jeremy Nevins ,  Michael John Bergmann ,  Joseph Gates Clark

    IPC: H01L33/60 ,  H01L33/54 ,  H01L33/50 ,  H01L25/075 ,  H01L33/48 ,  H01L23/00

    Abstract: LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with curved and planar surfaces. The packages can comprise a submount with a one or a plurality of LEDs, and in those with a plurality of LEDs each of the LEDs can emit the same or different wavelengths of light than the others. A blanket conversion material layer can be included on at least some of the LEDs and the submount. The encapsulant can be on the submount, over at least some of the LEDs, with each of the planar surfaces being vertical and aligned with one of the edges of the submount. The packages can also comprise reflective layers to minimize losses due to light absorption, which in turn can increase the overall package emission efficiency.

    Group III nitride based quantum well light emitting device structures with an indium containing capping structure
    19.
    发明授权
    Group III nitride based quantum well light emitting device structures with an indium containing capping structure 有权
    具有含铟封端结构的III族氮化物基量子阱发光器件结构

    公开(公告)号：US09054253B2

    公开(公告)日：2015-06-09

    申请号：US14015466

    申请日：2013-08-30

    Applicant: Cree, Inc.

    Inventor： Michael John Bergmann ,  David Todd Emerson

    IPC: H01L33/06 ,  H01L21/02 ,  H01L33/32 ,  B82Y20/00

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

    Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

    Abstract translation: 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包括至少一个量子阱结构，在有源区上包括铟的III族氮化物层， 在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

    Light emitting devices having current reducing structures
    20.
    发明授权
    Light emitting devices having current reducing structures 有权
    具有电流还原结构的发光器件

    公开(公告)号：US08704240B2

    公开(公告)日：2014-04-22

    申请号：US13856928

    申请日：2013-04-04

    Applicant: Cree, Inc.

    Inventor： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    IPC: H01L33/00

    CPC classification number: H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

    Abstract translation: 发光器件包括p型半导体层，n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘，所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

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