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11.
公开(公告)号:US11810820B2
公开(公告)日:2023-11-07
申请号:US17752062
申请日:2022-05-24
Applicant: DAI NIPPON PRINTING CO., LTD.
Inventor: Shinji Maekawa , Hiroshi Kudo , Takamasa Takano , Hiroshi Mawatari , Masaaki Asano
IPC: H01L29/80 , H01L31/112 , H01L21/768 , H01L21/3205 , H01L23/13 , H01L23/14 , H01L23/48 , H01L23/532 , H05K1/11 , H01L23/522 , H01L23/12 , H05K3/40
CPC classification number: H01L21/76898 , H01L21/3205 , H01L21/768 , H01L21/76831 , H01L23/12 , H01L23/13 , H01L23/14 , H01L23/481 , H01L23/522 , H01L23/53209 , H05K1/11 , H05K3/40
Abstract: A through electrode substrate includes a substrate provided with a through hole; a through electrode having a sidewall portion extending along a sidewall of the through hole, and a first portion positioned on a first surface of the substrate and connected to the sidewall portion; an inorganic film that at least partially covers the first portion of the through electrode from the first side and is provided with an opening positioned on the first portion; and a first wiring structure including at least a first wiring layer having an insulation layer that is positioned to the first side of the inorganic film and includes at least an organic layer provided with an opening communicating with the opening of the inorganic film, and an electroconductive layer connected to the first portion of the through electrode through the opening of the inorganic film and the opening of the insulation layer.
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公开(公告)号:US20190035742A1
公开(公告)日:2019-01-31
申请号:US16151543
申请日:2018-10-04
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Hiroshi Kudo , Takamasa Takano
IPC: H01L23/532 , H01L21/02 , H05K3/46 , H01L21/311
Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.
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公开(公告)号:US10121748B2
公开(公告)日:2018-11-06
申请号:US15636859
申请日:2017-06-29
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Hiroshi Kudo , Takamasa Takano
IPC: H01L23/532 , H01L23/522 , H01L21/768
Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.
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公开(公告)号:US20180277471A1
公开(公告)日:2018-09-27
申请号:US15994006
申请日:2018-05-31
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Takamasa Takano
IPC: H01L23/498 , H05K1/11 , H05K3/42 , H01L21/48 , H01L21/768 , H01L23/14 , H01L23/00 , H01L23/48 , H05K3/44
CPC classification number: H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49833 , H01L23/49838 , H01L23/49866 , H01L23/49894 , H01L24/17 , H01L2224/05647 , H01L2224/16225 , H01L2224/16235 , H01L2924/01024 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/15747 , H01L2924/15786 , H01L2924/1579 , H05K1/113 , H05K3/426 , H05K3/445 , H05K2201/09436 , H05K2201/09581 , H05K2201/09609 , H05K2201/09836 , H05K2201/09854 , H05K2201/10378 , H05K2203/0733 , H05K2203/1178 , Y10T29/49117 , Y10T29/49124 , Y10T29/49165
Abstract: A method of manufacturing a through-hole electrode substrate includes forming a plurality of through-holes in a substrate, forming a plurality of through-hole electrodes by filling a conductive material into the plurality of through-holes, forming a first insulation layer on one surface of the substrate, forming a plurality of first openings which expose the plurality of through-hole electrodes corresponding to each of the plurality of through-hole electrodes, on the first insulation layer and correcting a position of the plurality of first openings using the relationship between a misalignment amount of a measured distance value of an open position of a leaning through-hole among the plurality of through-holes and of a design distance value of the open position of the leaning through-hole among the plurality of through-holes with respect to a center position of the substrate.
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公开(公告)号:US09735108B2
公开(公告)日:2017-08-15
申请号:US14704096
申请日:2015-05-05
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Hiroshi Kudo , Takamasa Takano
IPC: H01L23/532 , H01L23/522 , H01L21/768
CPC classification number: H01L23/53238 , H01L21/02063 , H01L21/02071 , H01L21/02126 , H01L21/02274 , H01L21/31058 , H01L21/31116 , H01L21/76832 , H01L21/76834 , H01L21/7685 , H01L21/76877 , H01L21/76885 , H01L23/49822 , H01L23/5226 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H05K1/0231 , H05K3/4679 , H05K3/4688 , H05K2201/068 , H01L2924/00
Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.
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公开(公告)号:US20160329273A1
公开(公告)日:2016-11-10
申请号:US15214532
申请日:2016-07-20
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Takamasa Takano
IPC: H01L23/498 , H01L23/00 , H01L21/48
CPC classification number: H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49833 , H01L23/49838 , H01L23/49866 , H01L23/49894 , H01L24/17 , H01L2224/16225 , H01L2224/16235 , H01L2924/014 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/15747 , H01L2924/15786 , H01L2924/1579 , H05K1/113 , H05K3/426 , H05K3/445 , H05K2201/09436 , H05K2201/09581 , H05K2201/09609 , H05K2201/09836 , H05K2201/09854 , H05K2201/10378 , H05K2203/0733 , H05K2203/1178 , Y10T29/49117 , Y10T29/49124 , Y10T29/49165 , H01L2224/05647 , H01L2924/01024 , H01L2924/01079
Abstract: A method of manufacturing a through-hole electrode substrate includes forming a plurality of through-holes in a substrate, forming a plurality of through-hole electrodes by filling a conductive material into the plurality of through-holes, forming a first insulation layer on one surface of the substrate, forming a plurality of first openings which expose the plurality of through-hole electrodes corresponding to each of the plurality of through-hole electrodes, on the first insulation layer and correcting a position of the plurality of first openings using the relationship between a misalignment amount of a measured distance value of an open position of a leaning through-hole among the plurality of through-holes and of a design distance value of the open position of the leaning through-hole among the plurality of through-holes with respect to a center position of the substrate.
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公开(公告)号:US09209319B2
公开(公告)日:2015-12-08
申请号:US13729311
申请日:2012-12-28
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Takamasa Takano
IPC: H01L29/84 , H01L23/31 , H01L23/49 , H01L21/447 , G01P15/08 , G01P15/12 , H01L23/00 , H01L21/02 , B81B7/00
CPC classification number: H01L29/84 , B81B7/0025 , B81B7/0054 , B81B7/007 , B81B2201/0235 , B81B2207/096 , B81B2207/115 , G01P15/0802 , G01P15/123 , G01P2015/0842 , H01L21/02 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/48091 , H01L2224/48465 , H01L2224/48472 , H01L2224/48992 , H01L2224/48997 , H01L2224/49113 , H01L2224/49171 , H01L2224/8592 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0106 , H01L2924/01079 , H01L2924/14 , H01L2924/1461 , H01L2924/3511 , H01L2924/00 , H01L2224/45099
Abstract: A method for manufacturing a sensor device is provided. The method prevents corrosion of metal electrodes of a sensor due to outside air with high humidity and preventing the occurrence of warpage of the sensor due to resin sealing of the sensor, thereby reducing the influence on sensor characteristics, and provides the sensor device. The method includes arranging a sensor on a substrate, the sensor having a fixed part, a movable part positioned inside the fixed part, a flexible part connecting the fixed part and the movable part, and a plurality of metal electrodes, electrically connecting the plurality of metal electrodes of the sensor and a plurality of terminals of the substrate with bonding wires, and covering portions of the plurality of metal electrodes of the sensor connected to the bonding wires with a resin so that a part of the bonding wires between the plurality of metal electrodes and the plurality of terminals is exposed.
Abstract translation: 提供一种用于制造传感器装置的方法。 该方法防止由于高湿度的外部空气导致的传感器的金属电极的腐蚀,并且防止由于传感器的树脂密封而导致传感器发生翘曲,从而减少对传感器特性的影响,并提供传感器装置。 该方法包括将传感器布置在基板上,传感器具有固定部分,位于固定部分内部的可移动部分,连接固定部分和可移动部分的柔性部分,以及多个金属电极,电连接多个 传感器的金属电极和具有接合线的基板的多个端子,并且用树脂覆盖连接到接合线的传感器的多个金属电极的部分,使得多个金属之间的接合线的一部分 电极和多个端子被暴露。
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公开(公告)号:US12136591B2
公开(公告)日:2024-11-05
申请号:US18197157
申请日:2023-05-15
Applicant: DAI NIPPON PRINTING CO., LTD.
Inventor: Takamasa Takano , Satoru Kuramochi
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L23/12 , H01L23/538 , H01L25/065 , H01L25/16 , H01L49/02 , H05K1/11 , H05K3/28
Abstract: A through electrode substrate includes: a substrate having a first surface and a second surface facing the first surface; through electrodes penetrating through the substrate; and a first capacitor including a first conductive layer, an insulating layer, and a second conductive layer, arranged on the first surface side of the substrate, and electrically connected with at least one of the through electrodes. The first conductive layer is arranged on the first surface side of the substrate and is electrically connected with the through electrode. The insulating layer includes a first part and a second part and is arranged on the first conductive layer. The second conductive layer is arranged on the insulating layer. The first part is arranged between the first conductive layer and the second conductive layer. The second part covers at least a part of a side surface of the first conductive layer.
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公开(公告)号:US11862564B2
公开(公告)日:2024-01-02
申请号:US17352921
申请日:2021-06-21
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Hiroshi Kudo , Takamasa Takano
IPC: H01L23/532 , H01L23/498 , H01L21/02 , H01L23/522 , H05K3/46 , H01L21/3105 , H01L21/311 , H01L21/768 , H05K1/02
CPC classification number: H01L23/53238 , H01L21/02063 , H01L21/02071 , H01L21/02126 , H01L21/02274 , H01L21/31058 , H01L21/31116 , H01L21/7685 , H01L21/76877 , H01L23/49822 , H01L23/5226 , H01L23/5329 , H01L23/53295 , H05K3/4688 , H01L21/76832 , H01L21/76834 , H01L21/76885 , H01L2924/0002 , H05K1/0231 , H05K3/4679 , H05K2201/068 , H01L2924/0002 , H01L2924/00
Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.
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公开(公告)号:US20210313277A1
公开(公告)日:2021-10-07
申请号:US17352921
申请日:2021-06-21
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Hiroshi Kudo , Takamasa Takano
IPC: H01L23/532 , H01L23/498 , H01L21/02 , H01L23/522 , H05K3/46 , H01L21/3105 , H01L21/311 , H01L21/768
Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.
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