LINE STRUCTURE AND A METHOD FOR PRODUCING THE SAME

    公开(公告)号:US20190035742A1

    公开(公告)日:2019-01-31

    申请号:US16151543

    申请日:2018-10-04

    Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.

    Line structure and a method for producing the same

    公开(公告)号:US10121748B2

    公开(公告)日:2018-11-06

    申请号:US15636859

    申请日:2017-06-29

    Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.

    Through electrode substrate and semiconductor device

    公开(公告)号:US12136591B2

    公开(公告)日:2024-11-05

    申请号:US18197157

    申请日:2023-05-15

    Abstract: A through electrode substrate includes: a substrate having a first surface and a second surface facing the first surface; through electrodes penetrating through the substrate; and a first capacitor including a first conductive layer, an insulating layer, and a second conductive layer, arranged on the first surface side of the substrate, and electrically connected with at least one of the through electrodes. The first conductive layer is arranged on the first surface side of the substrate and is electrically connected with the through electrode. The insulating layer includes a first part and a second part and is arranged on the first conductive layer. The second conductive layer is arranged on the insulating layer. The first part is arranged between the first conductive layer and the second conductive layer. The second part covers at least a part of a side surface of the first conductive layer.

    MULTI-LAYER LINE STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

    公开(公告)号:US20210313277A1

    公开(公告)日:2021-10-07

    申请号:US17352921

    申请日:2021-06-21

    Abstract: A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.

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