公开(公告)号：US06977396B2

公开(公告)日：2005-12-20

申请号：US10369714

申请日：2003-02-19

申请人： Yu-Chen Shen ,  Daniel A. Steigerwald ,  Paul S. Martin

发明人： Yu-Chen Shen ,  Daniel A. Steigerwald ,  Paul S. Martin

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L24/17 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2224/05599 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147

摘要： A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.

摘要翻译： 发光器件包括第一导电类型的第一半导体层，有源区和第二导电类型的第二半导体层。 第一和第二触点连接到第一和第二半导体层。 在一些实施例中，第一和第二触头中的至少一个具有大于3.5微米的厚度。 在一些实施例中，第一热提取层连接到第一和第二触点之一。 在一些实施例中，第一和第二触点中的一个通过具有大于宽度的长度的焊料互连件连接到基座。 在一些实施例中，底部填充物设置在子安装座和第一和第二互连件之一之间。

公开(公告)号：US06784463B2

公开(公告)日：2004-08-31

申请号：US10095552

申请日：2002-03-11

申请人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

发明人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

公开(公告)号：US08455913B2

公开(公告)日：2013-06-04

申请号：US12969709

申请日：2010-12-16

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L33/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

公开(公告)号：US08431423B2

公开(公告)日：2013-04-30

申请号：US12503951

申请日：2009-07-16

申请人： Grigoriy Basin ,  Paul S. Martin

发明人： Grigoriy Basin ,  Paul S. Martin

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/507 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012

摘要： An underfill formation technique for LEDs molds a reflective underfill material to encapsulate LED dies mounted on a submount wafer while forming a reflective layer of the underfill material over the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top of the LED dies is removed using microbead blasting while leaving the reflective layer over the submount surface. The exposed growth substrate is then removed from all the LED dies, and a phosphor layer is molded over the exposed LED surface. A lens is then molded over the LEDs and over a portion of the reflective layer. The submount wafer is then singulated. The reflective layer increases the efficiency of the LED device by reducing light absorption by the submount without any additional processing steps.

摘要翻译： 用于LED的底部填充形成技术模制反射底部填充材料以封装安装在底座晶片上的LED管芯，同时在底座晶片上形成底部填充材料的反射层。 然后将底部填充材料硬化，例如通过固化。 使用微珠喷射除去在LED管芯顶部的固化的底部填充材料，同时将反射层留在底座表面上。 然后将曝光的生长衬底从所有的LED管芯移除，并且在暴露的LED表面上模制荧光体层。 然后将透镜模制在LED上并在反射层的一部分上方。 然后将底座晶片分离。 反射层通过减少副安装座的光吸收而没有任何额外的处理步骤来增加LED器件的效率。

公开(公告)号：US20110223696A1

公开(公告)日：2011-09-15

申请号：US13115475

申请日：2011-05-25

申请人： Grigoriy Basin ,  Frederic Diana ,  Paul S. Martin ,  Dima Simonian

发明人： Grigoriy Basin ,  Frederic Diana ,  Paul S. Martin ,  Dima Simonian

IPC分类号： H01L33/52

CPC分类号： H01L33/54 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/56 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： An underfill technique for LEDs uses compression molding to simultaneously encapsulate an array of flip-chip LED dies mounted on a submount wafer. The molding process causes liquid underfill material (or a softened underfill material) to fill the gap between the LED dies and the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top and sides of the LED dies is removed using microbead blasting. The exposed growth substrate is then removed from all the LED dies by laser lift-off, and the underfill supports the brittle epitaxial layers of each LED die during the lift-off process. The submount wafer is then singulated. This wafer-level processing of many LEDs simultaneously greatly reduces fabrication time, and a wide variety of materials may be used for the underfill since a wide range of viscosities is tolerable.

摘要翻译： 用于LED的底部填充技术使用压缩成型来同时封装安装在底座晶片上的倒装芯片LED管芯阵列。 成型工艺使液体底部填充材料（或软化的底部填充材料）填充LED管芯和底座晶片之间的间隙。 然后将底部填充材料硬化，例如通过固化。 使用微珠喷砂除去在LED管芯的顶部和侧面上固化的底部填充材料。 然后通过激光剥离从所有LED管芯去除暴露的生长衬底，并且底部填充物在剥离过程中支持每个LED管芯的脆性外延层。 然后将底座晶片分离。 许多LED的晶片级处理同时大大减少了制造时间，并且可以使用各种各样的材料用于底部填充，因为宽范围的粘度是可以容忍的。

公开(公告)号：US07553683B2

公开(公告)日：2009-06-30

申请号：US10863980

申请日：2004-06-09

申请人： Paul S. Martin ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Helena Ticha ,  Ladislav Tichy

发明人： Paul S. Martin ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Helena Ticha ,  Ladislav Tichy

IPC分类号： H01L21/00

CPC分类号： H01L33/501 ,  C03C3/12 ,  C03C8/10 ,  C03C14/004 ,  C03C2214/04 ,  C03C2214/16 ,  C09K11/02 ,  C09K11/7774 ,  H01L2933/0041

摘要： A semiconductor light emitting device is provided with a separately fabricated wavelength converting element. The wavelength converting element, of e.g., phosphor and glass, is produced in a sheet that is separated into individual wavelength converting elements, which are bonded to light emitting devices. The wavelength converting elements may be grouped and stored according to their wavelength converting properties. The wavelength converting elements may be selectively matched with a semiconductor light emitting device, to produce a desired mixture of primary and secondary light.

摘要翻译： 半导体发光器件设置有单独制造的波长转换元件。 例如磷光体和玻璃的波长转换元件在分离成各个波长转换元件的片材中产生，其结合到发光器件。 波长转换元件可以根据其波长转换特性进行分组和存储。 波长转换元件可以选择性地与半导体发光器件匹配，以产生所需的初级和次级光的混合。

公开(公告)号：US07170151B2

公开(公告)日：2007-01-30

申请号：US10346535

申请日：2003-01-16

申请人： Cresente S. Elpedes ,  Zainul Fiteri bin Aziz ,  Paul S. Martin

发明人： Cresente S. Elpedes ,  Zainul Fiteri bin Aziz ,  Paul S. Martin

IPC分类号： H01L23/495

CPC分类号： H01L33/642 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/48465

摘要： An LED assembly includes a heat sink and a submount. The heat sink has a top mating surface that is solder wettable, and the submount has a bottom mating surface that is solder wettable. The top and the bottom mating surfaces have substantially the same shape and area. The submount is soldered atop the heat sink. During solder reflow, the molten solder causes the submount to align with the top mating surface of the heat sink. The LED assembly may further include a substrate having a top mating surface, and the heat sink may further include a bottom mating surface. The top and bottom mating surfaces have substantially the same shape and area. The heat sink is soldered atop the substrate. During solder reflow, the molten solder causes the heat sink to align with the top mating surface of the substrate.

摘要翻译： LED组件包括散热器和底座。 散热器具有可焊接润湿的顶部配合表面，并且底座具有可焊接润湿的底部配合表面。 顶部和底部配合表面具有基本相同的形状和面积。 底座焊接在散热器顶部。 在焊料回流期间，熔融焊料使得底座与散热器的顶部配合表面对齐。 LED组件还可以包括具有顶部配合表面的衬底，并且散热器还可以包括底部配合表面。 顶部和底部配合表面具有基本相同的形状和面积。 散热器焊接在基板上。 在焊料回流期间，熔融焊料使得散热器与衬底的顶部配合表面对齐。

公开(公告)号：US09081167B2

公开(公告)日：2015-07-14

申请号：US12049239

申请日：2008-03-14

申请人： Grigoriy Basin ,  Robert Scott West ,  Paul S. Martin ,  Gerard Harbers ,  Willem H. Smits ,  Robert F. M. Hendriks ,  Frans H. Konijn

发明人： Grigoriy Basin ,  Robert Scott West ,  Paul S. Martin ,  Gerard Harbers ,  Willem H. Smits ,  Robert F. M. Hendriks ,  Frans H. Konijn

IPC分类号： H01L33/00 ,  G02B19/00 ,  H01L23/00 ,  H01L33/54 ,  H05K3/28 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58

CPC分类号： G02B19/0066 ,  G02B19/0028 ,  G02B19/0071 ,  H01L24/73 ,  H01L24/97 ,  H01L33/46 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/1815 ,  H01L2924/19107 ,  H05K3/284 ,  H05K2201/10106 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： One or more LED dice are mounted on a support structure. The support structure may be a submount with the LED dice already electrically connected to leads on the submount. A mold has indentations in it corresponding to the positions of the LED dice on the support structure. The indentations are filled with a liquid optically transparent material, such as silicone, which when cured forms a lens material. The shape of the indentations will be the shape of the lens. The mold and the LED dice/support structure are brought together so that each LED die resides within the liquid silicone in an associated indentation. The mold is then heated to cure (harden) the silicone. The mold and the support structure are then separated, leaving a complete silicone lens over each LED die. This over molding process may be repeated with different molds to create concentric shells of lenses. Each concentric lens may have a different property, such as containing a phosphor, providing a special radiation pattern, having a different hardness value, or curable by a different technique (e.g., UV vs. heat).

摘要翻译： 一个或多个LED骰子安装在支撑结构上。 支撑结构可以是具有LED芯片的基座，其已经电连接到底座上的引线。 模具中的凹槽对应于支撑结构上的LED骰子的位置。 凹痕中填充有液体光学透明材料，例如硅树脂，其在固化时形成透镜材料。 压痕的形状将是镜片的形状。 模具和LED骰子/支撑结构被聚集在一起，使得每个LED管芯位于相关压痕内的液体硅胶内。 然后将模具加热以固化（硬化）硅树脂。 然后将模具和支撑结构分离，在每个LED管芯上留下完整的硅胶透镜。 可以用不同的模具重复该过模制过程以产生透镜的同心壳。 每个同心透镜可以具有不同的性质，例如包含荧光体，提供具有不同硬度值的特殊辐射图，或者可通过不同技术（例如，UV与热）固化。

公开(公告)号：US20110084301A1

公开(公告)日：2011-04-14

申请号：US12969709

申请日：2010-12-16

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L33/48 ,  H01L33/36

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US20110049545A1

公开(公告)日：2011-03-03

申请号：US12552328

申请日：2009-09-02

申请人： Grigoriy Basin ,  Jeffrey Kmetec ,  Paul S. Martin

发明人： Grigoriy Basin ,  Jeffrey Kmetec ,  Paul S. Martin

IPC分类号： H01L33/00

CPC分类号： H01L24/97 ,  H01L33/005 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/73204 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00

摘要： After flip chip LEDs are mounted on a submount wafer and their growth substrates removed, a phosphor plate is affixed to the exposed top surface of each LED. A reflective material, such as silicone containing at least 5% TiO2 powder, by weight, is then spun over or molded over the wafer to cover the phosphor plates and the sides of the LEDs. The top surface of the reflective material is then etched using microbead blasting to expose the top of the phosphor plates and create a substantially planar reflective layer over the wafer surface. Lenses may then be formed over the LEDs. The wafer is then singulated. The reflective material reflects all side light back into the LED and phosphor plate so that virtually all light exits the top of the phosphor plate to improve the light emission characteristics.

摘要翻译： 在将倒装芯片LED安装在底座晶片上并且移除其生长衬底之后，将磷光体板固定到每个LED的暴露的顶表面。 然后将反射材料，例如含有至少5重量％TiO 2的硅氧烷的硅酮在晶片上旋转或模制，以覆盖荧光体板和LED的侧面。 然后使用微珠喷射来蚀刻反射材料的顶表面以暴露荧光体板的顶部并在晶片表面上形成基本上平面的反射层。 然后可以在LED上形成透镜。 然后将晶片切片。 反射材料将所有侧光反射回LED和磷光体板，使得几乎所有的光离开荧光体板的顶部以改善发光特性。