公开(公告)号：US4743299A

公开(公告)日：1988-05-10

申请号：US838967

申请日：1986-03-12

Applicant: Michael J. Pryor ,  Eugene Shapiro ,  Deepak Mahulikar

Inventor： Michael J. Pryor ,  Eugene Shapiro ,  Deepak Mahulikar

IPC: C22C29/12 ,  C22C32/00 ,  H01L21/00

CPC classification number: H01L21/67126 ,  C22C29/12 ,  C22C32/00 ,  C22C32/0036

Abstract: The present invention is directed to a cermet material comprising a matrix of aluminum alloy with ceramic particles distributed therein. The cermet is adapted for use as a semiconductor substrate and is manufactured using powder technology procedures. The cermet comprises from about 40 to about 60 volume % of aluminum or aluminum alloy, from an effective amount up to about 10 volume % of binder for enhancing bonding between the aluminum alloy and ceramic particles, and the balance essentially ceramic particles.

公开(公告)号：US08211193B2

公开(公告)日：2012-07-03

申请号：US11526132

申请日：2006-09-22

Applicant: Deepak Mahulikar ,  Yuhu Wang ,  Ken A. Delbridge ,  Gert R. M. Moyaerts ,  Saeed H. Mohseni ,  Nichole R. Koontz ,  Bin Hu ,  Liqing Wen

Inventor： Deepak Mahulikar ,  Yuhu Wang ,  Ken A. Delbridge ,  Gert R. M. Moyaerts ,  Saeed H. Mohseni ,  Nichole R. Koontz ,  Bin Hu ,  Liqing Wen

IPC: B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  C09K13/00 ,  C09K13/02 ,  B24B1/00 ,  C01B33/12 ,  C03C15/00 ,  C03C25/68

CPC classification number: C23F3/04 ,  C01B33/1435 ,  C01B33/1485 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/80 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/31053 ,  H01L21/3212

Abstract: A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

Abstract translation: 一种对基材表面进行化学机械抛光的方法，包括以下步骤：使除了钾和钠之外的每种微量金属杂质含有少于200ppb的多种胶体二氧化硅颗粒的组合物接触，其含量小于2ppm 残余醇，其中不包括钾和钠的痕量金属的累积浓度在约0.5至约5ppm的范围内; 和用于悬浮颗粒的介质; 其中所述组合物是超纯胶体二氧化硅分散体; 并且其中所述接触在足以平坦化基底的温度和时间段内进行。

公开(公告)号：US08192644B2

公开(公告)日：2012-06-05

申请号：US12580868

申请日：2009-10-16

Applicant: Hyungjun Kim ,  Richard Wen ,  Bin Hu ,  Minae Tanaka ,  Deepak Mahulikar

Inventor： Hyungjun Kim ,  Richard Wen ,  Bin Hu ,  Minae Tanaka ,  Deepak Mahulikar

IPC: C09K13/00

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Abstract translation: 本公开提供了用于化学机械抛光浆料的浓缩物，以及将该浓缩物稀释到使用点浆料的方法。 浓缩物包括研磨剂，络合剂和缓蚀剂，浓缩物用水和氧化剂稀释。 这些组分的存在量使得浓缩物可以以非常高的稀释比稀释，而不影响抛光性能。

公开(公告)号：US20120003901A1

公开(公告)日：2012-01-05

申请号：US12828766

申请日：2010-07-01

Applicant: Bin Hu ,  Abhishek Singh ,  Gert Moyaerts ,  Deepak Mahulikar ,  Richard Wen

Inventor： Bin Hu ,  Abhishek Singh ,  Gert Moyaerts ,  Deepak Mahulikar ,  Richard Wen

IPC: B24B1/00 ,  C09K13/04 ,  C09K13/00

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0475 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/76819 ,  H01L29/66545

Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.

Abstract translation: 本公开涉及一种高度可稀释的化学机械抛光浓缩物，其包含研磨剂，酸，稳定剂和水，其使用点pH为2.2-3.5，用于平坦化电流和下一代半导体集成电路FEOL / BEOL 底物。

公开(公告)号：US20110089143A1

公开(公告)日：2011-04-21

申请号：US12580868

申请日：2009-10-16

Applicant: Hyungjun Kim ,  Richard Wen ,  Bin Hu ,  Minae Tanaka ,  Deepak Mahulikar

Inventor： Hyungjun Kim ,  Richard Wen ,  Bin Hu ,  Minae Tanaka ,  Deepak Mahulikar

IPC: C23F1/18 ,  C09K13/00

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Abstract translation: 本公开提供了用于化学机械抛光浆料的浓缩物，以及将该浓缩物稀释到使用点浆料的方法。 浓缩物包括研磨剂，络合剂和缓蚀剂，浓缩物用水和氧化剂稀释。 这些组分的存在量使得浓缩物可以以非常高的稀释比稀释，而不影响抛光性能。

公开(公告)号：US20070075292A1

公开(公告)日：2007-04-05

申请号：US11526132

申请日：2006-09-22

Applicant: Deepak Mahulikar ,  Yuhu Wang ,  Ken Delbridge ,  Gert Moyaerts ,  Saeed Mohseni ,  Nichole Koontz ,  Bin Hu ,  Liqing Wen

Inventor： Deepak Mahulikar ,  Yuhu Wang ,  Ken Delbridge ,  Gert Moyaerts ,  Saeed Mohseni ,  Nichole Koontz ,  Bin Hu ,  Liqing Wen

IPC: C23F1/14 ,  C09K13/00

CPC classification number: C23F3/04 ,  C01B33/1435 ,  C01B33/1485 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/80 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/31053 ,  H01L21/3212

Abstract: A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

Abstract translation: 一种对基材表面进行化学机械抛光的方法，包括以下步骤：使除了钾和钠之外的每种微量金属杂质含有少于200ppb的多种胶体二氧化硅颗粒的组合物接触，其含量小于2ppm 残余醇，其中不包括钾和钠的痕量金属的累积浓度在约0.5至约5ppm的范围内; 和用于悬浮颗粒的介质; 其中所述组合物是超纯胶体二氧化硅分散体; 并且其中所述接触在足以平坦化基底的温度和时间段内进行。

公开(公告)号：US06749488B2

公开(公告)日：2004-06-15

申请号：US10268254

申请日：2002-10-09

Applicant: Anthony Mark Pasqualoni ,  Deepak Mahulikar ,  Larry A. LaFollette ,  Richard J. Jenkins

Inventor： Anthony Mark Pasqualoni ,  Deepak Mahulikar ,  Larry A. LaFollette ,  Richard J. Jenkins

IPC: B24B100

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract translation: 本发明涉及一种用于抛光金属的新型CMP浆料组合物，该组合物包含：（a）包含研磨剂的分散溶液; 和（b）氧化剂。 浆料组合物在30μm浆料中具有小于约150,000个颗粒的粒度大于约150,000的粒子，其通过在使用之前过滤浆料组合物来实现。 此外，包括化学活性增强剂（例如胺和腐蚀抑制剂）导致合适的铜去除速率而不增加静态蚀刻速率。

公开(公告)号：US06262477B1

公开(公告)日：2001-07-17

申请号：US08033596

申请日：1993-03-19

Applicant: Deepak Mahulikar ,  Paul R. Hoffman ,  Jeffrey S. Braden

Inventor： Deepak Mahulikar ,  Paul R. Hoffman ,  Jeffrey S. Braden

IPC: H01L2304

CPC classification number: H05K3/445 ,  H01L23/055 ,  H01L23/142 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/053 ,  H05K1/056 ,  H05K3/4046 ,  H05K2201/0999 ,  H01L2224/45099 ,  H01L2924/00

Abstract: There is provided a ball grid array package for housing semiconductor devices. The package has a metallic base with conductive vias extending through holes formed in the base. The conductive vias terminate adjacent an exterior surface of the base. A dielectric coating on at least part of the base and through hole walls electrically isolates the metallic base from the package circuitry.

Abstract translation: 提供了用于容纳半导体器件的球栅阵列封装。 该封装具有金属底座，导电通孔延伸穿过形成在基座中的孔。 导电通孔邻近基座的外表面终止。 在基底和通孔壁的至少一部分上的电介质涂层将金属基底与封装电路电隔离。

公开(公告)号：US5545850A

公开(公告)日：1996-08-13

申请号：US373138

申请日：1995-01-13

Applicant: Deepak Mahulikar ,  Paul R. Hoffman

Inventor： Deepak Mahulikar ,  Paul R. Hoffman

IPC: H01L23/16 ,  H01L23/31 ,  H01L23/495 ,  H01L23/02

CPC classification number: H01L23/49531 ,  H01L23/16 ,  H01L23/3142 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107

Abstract: There is provided a leadframe having a plurality of coplanar electrically conductive leads. At least one metallic guard is bonded to the leads with a dielectric layer disposed between the metallic guard and the leads. The metallic guard has good adhesion to a polymer molding resin such that when the leadframe structure is encased in a molding resin, delamination is minimized. By restricting delamination, the ingress of water and water soluble contaminants to an integrated circuit device is inhibited.

Abstract translation: 提供了具有多个共面导电引线的引线框架。 至少一个金属防护件与引线结合，其中介电层设置在金属防护罩和引线之间。 金属防护件对聚合物模塑树脂具有良好的粘附性，使得当引线框架结构被包封在模制树脂中时，分层最小化。 通过限制分层，抑制了水和水溶性污染物进入集成电路器件。

公开(公告)号：US5343073A

公开(公告)日：1994-08-30

申请号：US1014

申请日：1993-01-06

Applicant: Arvind Parthasarathi ,  Deepak Mahulikar

Inventor： Arvind Parthasarathi ,  Deepak Mahulikar

IPC: C23C30/00 ,  C22C9/00 ,  C22C9/06 ,  H01L21/56 ,  H01L23/28 ,  H01L23/48 ,  H01L23/495 ,  H01L23/50 ,  H01L29/44 ,  H01L29/52 ,  H01L29/62

CPC classification number: H01L23/10 ,  H01L23/3107 ,  H01L23/49582 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48618 ,  H01L2224/73265 ,  H01L2224/85201 ,  H01L2224/85418 ,  H01L2224/85871 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/20752

Abstract: There is provided a lead frame with enhanced adhesion to a polymer resin. The lead frame is coated with a thin layer of containing a mixture of chromium and zinc. A mixture of chromium and zinc with the zinc-to-chromium ratio in excess of about 4:1 is most preferred. The coated lead frames exhibit improved adhesion to a polymeric resin.

Abstract translation: 提供了对聚合物树脂具有增强粘附性的引线框架。 引线框架涂有含有铬和锌混合物的薄层。 锌与铬的比例超过约4:1的铬和锌的混合物是最优选的。 涂覆的引线框架对聚合树脂的粘附性提高。