Abstract:
An electronic package structure is provided. The electronic packaging structure includes a substrate, a conductive layer disposed on the substrate, an intermetallic compound disposed on the conductive layer, a stress buffering material disposed on the substrate and adjacent to the conductive layer, and an electronic device disposed on the conductive layer and the stress buffering material. The intermetallic compound is disposed between the electronic device and the conductive layer, between the electronic device and the stress buffering material, between the substrate and the stress buffering material, and between the conductive layer and the stress buffering material. A maximum thickness of the intermetallic compound disposed between the electronic device and the stress buffering material, between the substrate and the stress buffering material, and between the conductive layer and the stress buffering material is greater than the thickness of the intermetallic compound disposed between the electronic device and the conductive layer.
Abstract:
An electronic package structure is provided. The electronic packaging structure includes a substrate, a conductive layer disposed on the substrate, an intermetallic compound disposed on the conductive layer, a stress buffering material and an electronic device. The stress buffering material is disposed on the substrate and adjacent to the conductive layer. The electronic device is disposed on the intermetallic compound and the stress buffering material, and the electronic device is in contact with the intermetallic compound. The stress buffering material is adjacent to the conductive layer to have the conductive layer and the stress buffering material together serving as a stress buffer, so as to enhance the effect of stress buffering, thereby preventing a wafer from cracking due to stress.
Abstract:
A chip packaging includes a substrate, a first chip, a molding material, a first circuit, and a second circuit. The substrate includes a bottom surface, a first top surface disposed above the bottom surface with a first height, and a second top surface disposed above the bottom surface with a second height. The first height is smaller than the second height. The first chip is disposed on the first top surface. The molding material is disposed on the substrate and covers the first chip. The first and second circuits are disposed on the molding material, and are respectively and electrically connected to the first chip and the second top surface of the substrate. The substrate is made of copper material with huge area and has the properties of high current withstand capacity and high thermal efficiency. The second top surface protects the first chip from damage.
Abstract:
A solder and a solder joint structure formed by the solder are provided. The solder includes a zinc-based material, a copper film, and a noble metal film. The copper film completely covers the surface of the zinc-based material. The noble metal film completely covers the copper film. The solder joint structure includes a zinc-based material and an intermetallic layer. The intermetallic layer consists of zinc and noble metal and completely covers the surface of the zinc-based material.