公开(公告)号：US20160043455A1

公开(公告)日：2016-02-11

申请号：US14453746

申请日：2014-08-07

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01P5/107

CPC classification number: H01P5/107 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/18162 ,  H01P1/042 ,  H01P11/002 ,  H01P11/003 ,  H04B5/00

Abstract: A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.

Abstract translation: 微波器件包括包括微波半导体芯片和与半导体封装件相关联的波导部件的半导体封装。 波导部分被配置为传送微波波导信号。 它包括一个或多个片段。 微波装置还包括变换元件，其被配置为将来自微波半导体芯片的微波信号转换成微波波导信号，或者将微波波导信号转换为用于微波半导体芯片的微波信号。

公开(公告)号：US20150318384A1

公开(公告)日：2015-11-05

申请号：US14267651

申请日：2014-05-01

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Wolfgang Liebl

IPC: H01L29/732 ,  H01L21/324 ,  H01L29/06 ,  H01L21/225 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/732 ,  H01L21/225 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66272 ,  H01L29/7371

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract translation: 公开了双极晶体管和制造双极晶体管的方法。 在一个实施例中，双极晶体管包括半导体本体，其包括集电极区域和布置在集电极区域顶部的基极区域，该集电极区域掺杂有第二掺杂类型的掺杂剂，并且该基极区域至少部分掺杂有掺杂剂 第一掺杂类型和布置在基极区域顶部的绝缘间隔物。 所述半导体本体还包括半导体层，所述半导体层包括布置在所述基极区域上并由所述间隔物横向包围的发射极区域，所述发射极区域掺杂有与所述基极区域形成pn结的所述第二掺杂类型的掺杂剂，其中所述发射极区域 通过间隔件的底侧完全位于水平面之上。

公开(公告)号：US20150171033A1

公开(公告)日：2015-06-18

申请号：US14106092

申请日：2013-12-13

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/66 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A semiconductor device package includes an encapsulant and a semiconductor chip. The semiconductor chip is at least partly embedded in the encapsulant. A microwave component including at least one electrically conducting wall structure is integrated in the encapsulant. Further, the semiconductor device package includes an electrical interconnect configured to electrically couple the microwave component to the semiconductor chip.

Abstract translation: 半导体器件封装包括密封剂和半导体芯片。 半导体芯片至少部分地嵌入密封剂中。 包括至少一个导电壁结构的微波部件集成在密封剂中。 此外，半导体器件封装包括被配置为将微波部件电耦合到半导体芯片的电互连。

公开(公告)号：US11879966B2

公开(公告)日：2024-01-23

申请号：US17248003

申请日：2021-01-05

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Walter Hartner

IPC: G01S13/86 ,  G01S13/00 ,  G01S7/00 ,  G01S7/02 ,  H04B1/40 ,  G01S13/931 ,  G01S7/03 ,  G01S13/87

CPC classification number: G01S13/86 ,  G01S7/006 ,  G01S7/02 ,  G01S13/003 ,  H04B1/40 ,  G01S7/032 ,  G01S13/878 ,  G01S13/931 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105

Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

公开(公告)号：US20210247510A1

公开(公告)日：2021-08-12

申请号：US17248003

申请日：2021-01-05

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Walter Hartner

IPC: G01S13/86 ,  G01S13/00 ,  G01S7/00 ,  G01S7/02 ,  H04B1/40

Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

公开(公告)号：US09910145B2

公开(公告)日：2018-03-06

申请号：US14135069

申请日：2013-12-19

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Walter Hartner

IPC: G01S13/93 ,  G01S13/86 ,  G01S7/02 ,  H04B1/40 ,  G01S13/00 ,  G01S7/00 ,  G01S7/03 ,  G01S13/87

CPC classification number: G01S13/86 ,  G01S7/006 ,  G01S7/02 ,  G01S7/032 ,  G01S13/003 ,  G01S13/878 ,  G01S13/931 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H04B1/40

Abstract: A wireless communication system includes a first semiconductor module and a second semiconductor module. The first semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the first semiconductor module and the antenna structure of the first semiconductor module are arranged within a common package. The semiconductor die of the first semiconductor module includes a transmitter module configured to transmit the wireless communication signal through the antenna structure of the first semiconductor module. The second semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the second semiconductor module includes a receiver module configured to receive the wireless communication signal through the antenna structure of the second semiconductor module from the first semiconductor module.

公开(公告)号：US09627516B2

公开(公告)日：2017-04-18

申请号：US14267651

申请日：2014-05-01

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Wolfgang Liebl

IPC: H01L29/732 ,  H01L21/324 ,  H01L21/225 ,  H01L29/66 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/737

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

公开(公告)号：US09337159B2

公开(公告)日：2016-05-10

申请号：US14106092

申请日：2013-12-13

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/66 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A semiconductor device package includes an encapsulant and a semiconductor chip. The semiconductor chip is at least partly embedded in the encapsulant. A microwave component including at least one electrically conducting wall structure is integrated in the encapsulant. Further, the semiconductor device package includes an electrical interconnect configured to electrically couple the microwave component to the semiconductor chip.

Abstract translation: 半导体器件封装包括密封剂和半导体芯片。 半导体芯片至少部分地嵌入密封剂中。 包括至少一个导电壁结构的微波部件集成在密封剂中。 此外，半导体器件封装包括被配置为将微波部件电耦合到半导体芯片的电互连。

公开(公告)号：US09064787B2

公开(公告)日：2015-06-23

申请号：US13868191

申请日：2013-04-23

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Thorsten Meyer

IPC: H05K1/18 ,  H01L23/00 ,  H01L23/498 ,  H01L23/66 ,  H01Q1/44 ,  H01Q17/00 ,  H01Q23/00 ,  G01S7/03 ,  H05K3/34

CPC classification number: H01L24/20 ,  G01S7/032 ,  H01L23/49816 ,  H01L23/66 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/19 ,  H01L24/32 ,  H01L24/81 ,  H01L24/96 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/13191 ,  H01L2224/13299 ,  H01L2224/14051 ,  H01L2224/141 ,  H01L2224/14505 ,  H01L2224/14517 ,  H01L2224/16225 ,  H01L2224/17517 ,  H01L2224/21 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/831 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3512 ,  H01L2924/384 ,  H01Q1/44 ,  H01Q17/00 ,  H01Q23/00 ,  H05K3/3436 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor module having one or more integrated antennas in a single package is provided herein. The semiconductor module has a bonding interconnect structure that connects an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.

Abstract translation: 本文提供了在单个封装中具有一个或多个集成天线的半导体模块。 半导体模块具有将集成封装连接到印刷电路板（PCB）的接合互连结构，其中集成天线结构位于距离IC器件比三维互连结构更大的中心到中心距离处。 因此，接合互连结构被限制在连接区域上，该连接区域使得包含一个或多个天线结构的封装的一部分延伸超过作为悬臂结构的接合互连结构。 这种接合互连结构导致在支撑封装负载的较小区域处与PCB接触的封装。

公开(公告)号：US20130241059A1

公开(公告)日：2013-09-19

申请号：US13868191

申请日：2013-04-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Thorsten Meyer

IPC: H01L23/00

CPC classification number: H01L24/20 ,  G01S7/032 ,  H01L23/49816 ,  H01L23/66 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/19 ,  H01L24/32 ,  H01L24/81 ,  H01L24/96 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/13191 ,  H01L2224/13299 ,  H01L2224/14051 ,  H01L2224/141 ,  H01L2224/14505 ,  H01L2224/14517 ,  H01L2224/16225 ,  H01L2224/17517 ,  H01L2224/21 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/831 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3512 ,  H01L2924/384 ,  H01Q1/44 ,  H01Q17/00 ,  H01Q23/00 ,  H05K3/3436 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor module having one or more integrated antennas in a single package is provided herein. The semiconductor module has a bonding interconnect structure that connects an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.

Abstract translation: 本文提供了在单个封装中具有一个或多个集成天线的半导体模块。 半导体模块具有将集成封装连接到印刷电路板（PCB）的接合互连结构，其中集成天线结构位于距离IC器件比三维互连结构更大的中心到中心距离处。 因此，接合互连结构被限制在连接区域上，该连接区域使得包含一个或多个天线结构的封装的一部分延伸超过作为悬臂结构的接合互连结构。 这种接合互连结构导致在支撑封装负载的较小区域处与PCB接触的封装。