公开(公告)号：US20170323716A1

公开(公告)日：2017-11-09

申请号：US15659981

申请日：2017-07-26

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Vladimir Dribinski ,  John Fielden ,  Jidong Zhang

IPC: H01F17/00 ,  H01F27/29 ,  H01F17/04

CPC classification number: H01F17/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02B21/10 ,  G02B21/16 ,  G02B21/361 ,  G02F1/353 ,  G02F2001/3507 ,  G02F2001/354 ,  H01F17/04 ,  H01F27/292 ,  H01S3/0092 ,  H01S3/10007 ,  H01S3/10084 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/0604 ,  H01S5/4012

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.

公开(公告)号：US20170278694A1

公开(公告)日：2017-09-28

申请号：US15285333

申请日：2016-10-04

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Liou ,  John Fielden

IPC: H01J61/02 ,  H01J61/20 ,  H05H1/24 ,  H01J61/16

CPC classification number: H01J61/025 ,  H01J61/125 ,  H01J61/16 ,  H01J61/20 ,  H01J61/54 ,  H01J65/04 ,  H05H1/24

Abstract: A high brightness laser-sustained broadband light source includes a gas containment structure and a pump laser configured to generate a pump beam including illumination of a wavelength at least proximate to a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source includes one or more anamorphic illumination optics configured to focus the pump beam into an approximately elliptical beam waist positioned in or proximate to the center of the gas containment structure. The broadband light source includes one or more first collection optics configured to collect broadband radiation emitted by the plasma in a direction substantially aligned with a longer axis of the elliptical beam waist.

公开(公告)号：US09748729B2

公开(公告)日：2017-08-29

申请号：US14872890

申请日：2015-10-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Vladimir Dribinski ,  John Fielden ,  Jidong Zhang

IPC: G02F1/39 ,  H01S3/109 ,  G02B21/10 ,  G02B21/16 ,  G02B21/36 ,  H01S3/10 ,  H01S3/108 ,  H01S5/00 ,  H01S5/06 ,  H01S5/40 ,  G01N21/95 ,  G01N21/956

CPC classification number: H01F17/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02B21/10 ,  G02B21/16 ,  G02B21/361 ,  G02F1/353 ,  G02F2001/3507 ,  G02F2001/354 ,  H01F17/04 ,  H01F27/292 ,  H01S3/0092 ,  H01S3/10007 ,  H01S3/10084 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/0604 ,  H01S5/4012

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.

公开(公告)号：US20170229829A1

公开(公告)日：2017-08-10

申请号：US15495162

申请日：2017-04-24

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/00 ,  G02F1/37 ,  G02F1/39 ,  G01N21/956 ,  H01S3/23 ,  G02F1/355 ,  G01N21/88 ,  G02F1/35 ,  H01S3/16

Abstract: Laser and inspection systems that generate laser output light at sub-200 nm wavelengths using fundamental light at approximately 1064 nm. A second harmonic generator module generates second harmonic light directed to both an optical parametric (OP) module, which generates down-converted signal (idler light), and to a fifth harmonic generator module, which generates fifth harmonic light. The OP module includes an optical parametric oscillator that is configured to generate the idler signal at approximately 0.5 times the fundamental frequency. The idler light and fifth harmonic light are then mixed by a frequency mixing module to generate the laser output light having an output frequency equal to approximately 5.5 times the fundamental frequency.

公开(公告)号：US09620547B2

公开(公告)日：2017-04-11

申请号：US15201028

申请日：2016-07-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: H01L27/146 ,  G01N21/95 ,  G01N21/88 ,  H01L27/148 ,  H01L31/107 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

公开(公告)号：US09601299B2

公开(公告)日：2017-03-21

申请号：US13947975

申请日：2013-07-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden

IPC: H01J5/16 ,  H01J29/38 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  G02B21/12 ,  G01N21/95 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

公开(公告)号：US20160290932A1

公开(公告)日：2016-10-06

申请号：US15182200

申请日：2016-06-14

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L27/146

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 一种检查系统，包括用于将来自照明源的光引导到样品的光学系统（光学器件），以及将从样品反射/散射的光引导到一个或多个图像传感器。 系统的至少一个图像传感器形成在包括具有相对表面的外延层的半导体膜上，形成在外延层的一个表面上的电路元件和在外延层的另一个表面上的纯硼层。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

公开(公告)号：US20150260659A1

公开(公告)日：2015-09-17

申请号：US14643148

申请日：2015-03-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: G01N21/95 ,  H01L27/146 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028 ,  G01N21/88 ,  H01L27/148

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract translation: 高灵敏度图像传感器包括硅的外延层，其是固有的或轻掺杂的（例如掺杂水平小于约1013cm-3）。 CMOS或CCD电路制造在外延层的前侧。 外延p和n型层生长在外延层的背面。 在n型外延层上沉积纯硼层。 在硼沉积过程中，一些硼从背面被驱动到几nm的n型外延层中。 可以将抗反射涂层施加到纯硼层。 在传感器的操作期间，将数十至几百伏的负偏压施加到硼层，以加速光电子远离背面，并通过雪崩效应产生额外的电子。 接地的p阱可以根据需要从反向偏置的外延层保护有源电路。

公开(公告)号：US08873054B2

公开(公告)日：2014-10-28

申请号：US13865104

申请日：2013-04-17

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Alexander Svizher ,  Joel Seligson ,  Andrew Hill ,  Ohad Bachar ,  Amnon Manassen ,  Yung-Ho Alex Chuang ,  Ilan Sela ,  Moshe Markowitz ,  Daria Negri ,  Efraim Rotem

IPC: G01J4/00 ,  G01B11/14 ,  G01B11/04 ,  G01B11/00 ,  G01N21/47 ,  G01B11/02 ,  G03F7/20 ,  G01B11/06 ,  G01N21/21 ,  G01N21/956

CPC classification number: G01N21/47 ,  G01B11/02 ,  G01B11/0641 ,  G01B2210/56 ,  G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/4792 ,  G01N2201/06113 ,  G01N2201/105 ,  G03F7/70625 ,  G03F7/70633

Abstract: Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.

Abstract translation: 提供了各种计量系统和方法。 一个计量系统包括被配置为产生衍射受限光束的光源，被配置为使照明光学器件的入射光瞳中的光束成形的变迹器，以及被配置为将来自变迹器的衍射受限光束引导到 在晶片上的光栅目标上的照明点并且收集来自光栅目标的散射光。 测量系统还包括场停止器和检测器，其被配置为检测通过场停止器的散射光。 此外，计量系统包括被配置为使用检测器的输出来确定光栅目标的特性的计算机系统。

公开(公告)号：US20130282340A1

公开(公告)日：2013-10-24

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。