公开(公告)号：US11677053B2

公开(公告)日：2023-06-13

申请号：US17233767

申请日：2021-04-19

Applicant: NICHIA CORPORATION

Inventor： Yoshiki Inoue ,  Naoto Furuha ,  Tadaaki Ikeda

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/38 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L33/60 ,  H01L25/0756 ,  H01L33/38 ,  H01L33/505 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: A method of manufacturing a light emitting element includes: providing a first light emitting part and a second light emitting part, the first light emitting part comprising a first base member and a first semiconductor layered body, the second light emitting part comprising a second base member and a second semiconductor layered body; bonding the first and second light emitting parts to each other such that the first base member and the second base member are disposed between the first semiconductor layered body and the second semiconductor layered body; disposing a light reflecting member to cover the bonded first and second light emitting parts; removing a portion of the light reflecting member to expose surfaces of the first and second base members; and disposing a wavelength conversion member on the exposed surface of the first base member and the exposed surface of the second base member.

公开(公告)号：US11056612B2

公开(公告)日：2021-07-06

申请号：US16677287

申请日：2019-11-07

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/14 ,  H01L33/32 ,  H01L21/268 ,  H01L33/22

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

公开(公告)号：US10468556B2

公开(公告)日：2019-11-05

申请号：US16100104

申请日：2018-08-09

Applicant: Nichia Corporation

Inventor： Keiji Emura ,  Yoshiki Inoue ,  Hiroaki Kageyama

IPC: H01L33/38 ,  H01L33/50

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

公开(公告)号：US09780261B2

公开(公告)日：2017-10-03

申请号：US15267691

申请日：2016-09-16

Applicant: NICHIA CORPORATION

Inventor： Keiji Emura ,  Yoshiki Inoue ,  Hiroaki Kageyama

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/62

Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

公开(公告)号：US09525103B2

公开(公告)日：2016-12-20

申请号：US14734961

申请日：2015-06-09

Applicant: NICHIA CORPORATION

Inventor： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract translation: 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US12243954B2

公开(公告)日：2025-03-04

申请号：US18343078

申请日：2023-06-28

Applicant: NICHIA CORPORATION

Inventor： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US12218271B2

公开(公告)日：2025-02-04

申请号：US18507177

申请日：2023-11-13

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L21/268 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US10115877B2

公开(公告)日：2018-10-30

申请号：US15466780

申请日：2017-03-22

Applicant: NICHIA CORPORATION

Inventor： Masatsugu Ichikawa ,  Yoshiki Inoue ,  Yoshiyuki Aihara ,  Takehito Shimatsu

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L25/075 ,  H01L33/44

Abstract: A method for manufacturing a semiconductor device includes: providing a support with a semiconductor light-emitting element including a first electrode and a second electrode; providing a base including a first interconnect terminal and a second interconnect terminal; forming a first metal layer on the support to cover the first and the second electrodes; forming a second metal layer on the base to cover the first and the second interconnect terminals; arranging the first and second electrodes and the first and second interconnect terminals to respectively face each other, and providing electrical connection therebetween by atomic diffusion; and rendering electrically insulative or removing portions of the first metal layer and the second metal layer that are outside thereof defined between the first and second electrodes and the first and second interconnect terminals.

公开(公告)号：US10074775B2

公开(公告)日：2018-09-11

申请号：US15210302

申请日：2016-07-14

Applicant: NICHIA CORPORATION

Inventor： Keiji Emura ,  Yoshiki Inoue ,  Hiroaki Kageyama

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L33/382 ,  H01L33/387 ,  H01L33/504

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

公开(公告)号：US09711685B2

公开(公告)日：2017-07-18

申请号：US15095937

申请日：2016-04-11

Applicant: NICHIA CORPORATION

Inventor： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC: H01L33/32 ,  H01L33/22 ,  C30B25/18 ,  C30B29/20 ,  C30B29/40 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/308 ,  H01L21/02 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.