公开(公告)号：US20070000897A1

公开(公告)日：2007-01-04

申请号：US11423651

申请日：2006-06-12

申请人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

发明人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC分类号： H01L21/324 ,  H05B3/00

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20060264062A1

公开(公告)日：2006-11-23

申请号：US11493211

申请日：2006-07-25

申请人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

公开(公告)号：US06793733B2

公开(公告)日：2004-09-21

申请号：US10057280

申请日：2002-01-25

申请人： Karthik Janakiraman ,  Nitin Ingle ,  Zheng Yuan ,  Steven Gianoulakis

发明人： Karthik Janakiraman ,  Nitin Ingle ,  Zheng Yuan ,  Steven Gianoulakis

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.

摘要翻译： 用于半导体制造工艺的气体分配喷头具有面板，该面板具有细长狭槽或通道形式的气体出口。 根据本发明的实施例，使用细长的气体出口端口基本上减少了喷头与晶片紧密隔开的沉积材料的不期望的斑点和条纹的发生。 还公开了一种具有锥形轮廓的面板的喷头，以在近距离的盘对晶片间隔处减小沉积材料的边缘厚度。

公开(公告)号：US09064815B2

公开(公告)日：2015-06-23

申请号：US13416223

申请日：2012-03-09

申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01L21/31116 ,  H01J37/32422 ,  H01L21/31122 ,  H01L21/32136

摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

摘要翻译： 从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

公开(公告)号：US08765573B2

公开(公告)日：2014-07-01

申请号：US13229673

申请日：2011-09-10

申请人： Abhijit Basu Mallick ,  Nitin Ingle

发明人： Abhijit Basu Mallick ,  Nitin Ingle

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/02 ,  H01L21/764

CPC分类号： H01L21/764 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

摘要： A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.

摘要翻译： 在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。 该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。 该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。

公开(公告)号：US08759223B2

公开(公告)日：2014-06-24

申请号：US13593412

申请日：2012-08-23

申请人： Kedar Sapre ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

发明人： Kedar Sapre ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116

摘要： A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

摘要翻译： 蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。 具有双重图案化特征的基板被提供到处理区域。 包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。 通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。 固体残余物通过将基底加热至至少约100℃的温度升华。

公开(公告)号：US08741778B2

公开(公告)日：2014-06-03

申请号：US13197487

申请日：2011-08-03

申请人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

发明人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

IPC分类号： H01L21/302

CPC分类号： H01L21/31116

摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

摘要翻译： 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

公开(公告)号：US08475674B2

公开(公告)日：2013-07-02

申请号：US12839651

申请日：2010-07-20

申请人： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

发明人： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

IPC分类号： B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/32357

摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

摘要翻译： 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：US20120238103A1

公开(公告)日：2012-09-20

申请号：US13416223

申请日：2012-03-09

申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32422 ,  H01L21/31122 ,  H01L21/32136

摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

摘要翻译： 从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

公开(公告)号：US08980382B2

公开(公告)日：2015-03-17

申请号：US12836991

申请日：2010-07-15

申请人： Nitin Ingle ,  Abhijit Basu Mallick ,  Earl Osman Solis ,  Nicolay Kovarsky ,  Olga Lyubimova

发明人： Nitin Ingle ,  Abhijit Basu Mallick ,  Earl Osman Solis ,  Nicolay Kovarsky ,  Olga Lyubimova

IPC分类号： B05D1/34 ,  H05H1/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  H01J37/32 ,  H05H1/46

CPC分类号： C23C16/308 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32449

摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

摘要翻译： 描述形成氧化硅层的方法。 所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。 自由基前体和含硅前体之一含有氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。 自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。