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11.发明申请公开(公告)号：US20220029056A1
公开(公告)日：2022-01-27
申请号：US17311643
申请日：2019-12-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tansen Varghese , Wolfgang Schmid
Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.
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公开(公告)号：US10074769B2
公开(公告)日：2018-09-11
申请号：US14767634
申请日：2014-02-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Thomas Schwarz , Hans-Jürgen Lugauer , Jürgen Moosburger , Stefan Illek , Tansen Varghese , Matthias Sabathil
CPC classification number: H01L33/0095 , H01L33/483 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2224/04105 , H01L2224/96 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.
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公开(公告)号：US10074766B2
公开(公告)日：2018-09-11
申请号：US15119376
申请日：2015-02-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Norwin Von Malm , Alexander F. Pfeuffer , Tansen Varghese , Philipp Kreuter
IPC: H01L31/18 , H01L31/0224 , H01L33/00 , H01L33/38 , H01L31/0352 , H01L31/0693 , H01L31/0735 , H01L31/056 , H01L23/544 , H01L31/0304 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/42
CPC classification number: H01L31/1892 , H01L21/76898 , H01L23/544 , H01L31/02245 , H01L31/022466 , H01L31/03046 , H01L31/03048 , H01L31/035236 , H01L31/035281 , H01L31/056 , H01L31/0693 , H01L31/0735 , H01L31/186 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/382 , H01L33/42 , H01L2223/5446 , H01L2933/0016 , Y02E10/52 , Y02E10/544 , Y02P70/521
Abstract: A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.
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公开(公告)号：US09773945B2
公开(公告)日：2017-09-26
申请号：US15009736
申请日：2016-01-28
Applicant: OSRAM Opto Semiconductors GmbH , X-Celeprint Limited
Inventor： Matthew Meitl , Christopher Bower , Tansen Varghese
CPC classification number: H01L33/22 , H01L25/0753 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01L33/382 , H01L33/465 , H01L2933/0033 , H01L2933/0058
Abstract: A method for producing a plurality of semiconductor components and a semiconductor component is disclosed. In some embodiment, the method includes forming a semiconductor layer sequence, structuring the semiconductor layer sequence by forming trenches thereby structuring semiconductor bodies, applying an auxiliary substrate on the semiconductor layer sequence, so that the semiconductor layer sequence is arranged between the auxiliary substrate and the substrate and removing the substrate from the semiconductor layer sequence. The method further comprises applying an anchoring layer covering the trench and vertical surfaces of the semiconductor bodies, forming a plurality of tethers by structuring the anchoring layer in regions covering the trench, locally detaching the auxiliary substrate from the semiconductor bodies, wherein the tethers remain attached to the auxiliary substrate and selectively picking up a semiconductor body by separating the tethers from the auxiliary substrate, the semiconductor body including a portion of the layer sequence.
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公开(公告)号：US20160005936A1
公开(公告)日：2016-01-07
申请号：US14769198
申请日：2014-01-15
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stefan Illek , Hans-Jürgen Lugauer , Jürgen Moosburger , Thomas Schwarz , Tansen Varghese
CPC classification number: H01L33/54 , H01L33/005 , H01L33/0095 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
Abstract: A method can be used for for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.
Abstract translation: 一种方法可用于制造光电子元件。 光电子半导体芯片具有正面和背面。 将牺牲层施加到后表面。 模制体形成为至少部分地嵌入模制体中的光电子半导体芯片。 牺牲层被去除。
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Patent Agency Ranking
公开(公告)号：US11948966B2
公开(公告)日：2024-04-02
申请号：US17434511
申请日：2020-03-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tansen Varghese , Bruno Jentzsch
IPC: H01L27/15 , H01L33/00 , H01S5/0239 , H01S5/18
CPC classification number: H01L27/156 , H01L33/0045 , H01S5/0239 , H01S5/18
Abstract: In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.
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公开(公告)号：US20220020811A1
公开(公告)日：2022-01-20
申请号：US17310394
申请日：2020-01-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Rudolf Behringer , Tansen Varghese , Alvaro Gomez-Iglesias
Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconducting recombination layer (1) for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements (31) on a first side (11) of the recombination layer, at least one second contact element (32) on the first side of the recombination layer, a plurality of semiconducting first connection regions (21), and at least one semiconducting second connection region (22). Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.
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公开(公告)号：US11056621B2
公开(公告)日：2021-07-06
申请号：US16332964
申请日：2017-09-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tansen Varghese , David O'Brien , Georg Roßbach
Abstract: An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.
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公开(公告)号：US20180145058A1
公开(公告)日：2018-05-24
申请号：US15875955
申请日：2018-01-19
Applicant: OSRAM Opto Semiconductors GmbH , X-Celeprint Limited
Inventor： Matthew Meitl , Christopher Bower , Tansen Varghese
IPC: H01L25/075 , H01L33/44 , H01L33/00 , H01L33/50 , H01L33/56 , H01L33/38 , H01L33/22 , H01L33/60 , H01L21/78
CPC classification number: H01L25/0753 , H01L21/7806 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/508 , H01L33/56 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0091
Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the component includes a light transmissive carrier, a semiconductor body disposed on the light transmissive carrier, the semiconductor body including a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body includes a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the carrier and a contact structure including a first contact area and a second contact area arranged on the second main surface, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the contact structure comprises a via extending from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer.
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20.发明申请公开(公告)号：US20160254253A1
公开(公告)日：2016-09-01
申请号：US15009744
申请日：2016-01-28
Applicant: OSRAM Opto Semiconductors GmbH , X-Celeprint Limited
Inventor： Matthew Meitl , Christopher Bower , Tansen Varghese
CPC classification number: H01L25/0753 , H01L21/7806 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/508 , H01L33/56 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0091
Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the method includes applying a semiconductor layer sequence on a substrate, structuring the semiconductor layer sequence by forming trenches thereby separating the semiconductor layer sequence into a plurality of semiconductor bodies and applying an insulating layer covering the trenches and vertical surfaces of the plurality of semiconductor bodies. The method further includes forming a plurality of tethers by structuring the insulating layer in regions covering the trenches, locally detaching the substrate from the plurality of semiconductor bodies, wherein the tethers remain attached to the substrate and selectively picking up each semiconductor body by separating the tethers from the substrate, wherein each semiconductor body comprises a portion of the semiconductor layer sequence.
Abstract translation: 公开了一种用于制造多个半导体部件和半导体部件的方法。 在一个实施例中，该方法包括在衬底上施加半导体层序列，通过形成沟槽来构造半导体层序列，从而将半导体层序列分离成多个半导体体并施加覆盖多个半导体层的沟槽和垂直表面的绝缘层 半导体体。 该方法还包括通过在覆盖沟槽的区域中构造绝缘层来形成多个系绳，将衬底局部地从多个半导体主体分离，其中系链保持附着到衬底并且通过分离系绳选择性地拾取每个半导体主体 其中每个半导体主体包括半导体层序列的一部分。
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