公开(公告)号：US20240186224A1

公开(公告)日：2024-06-06

申请号：US18060680

申请日：2022-12-01

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomohiro NISHIYAMA ,  Toshiyuki HATA ,  Tatsuaki TSUKUDA

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/495

CPC classification number: H01L23/49811 ,  H01L23/4952 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/18 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/182

Abstract: Improving a performance of a semiconductor device. A method of manufacturing the semiconductor device, including steps of: forming a first convex portion on a front surface of a chip mounting portion; and mounting a semiconductor chip on the front surface of the chip mounting portion via a conductive adhesive material. Here, the semiconductor chip includes: a main transistor forming portion in which a main transistor is formed; and a sense transistor forming portion in which a sense transistor is formed. Also, in the step for mounting the semiconductor chip on the chip mounting portion, the semiconductor chip is mounted on the front surface of the chip mounting portion such that the sense transistor forming portion of the semiconductor chip overlaps the first convex portion formed on the front surface of the chip mounting portion in the step for forming the first convex portion.

公开(公告)号：US20240170375A1

公开(公告)日：2024-05-23

申请号：US17993390

申请日：2022-11-23

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tatsuaki TSUKUDA ,  Tomohiro NISHIYAMA ,  Toshiyuki HATA ,  Koichi HASEGAWA

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/37 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40175 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/73265

Abstract: The on-resistance of a semiconductor device is reduced. A package structure composing the semiconductor device includes a die pad, a plurality of leads, a first semiconductor chip having a power transistor and mounted on the die pad, and a second semiconductor chip including a control circuit for controlling the power transistor and mounted on the first semiconductor chip. Here, a source pad of the first semiconductor chip is electrically connected to a first lead and a seventh lead of the plurality of leads via a clip made of a material which is copper as a main component, and the width (and cross-sectional area) of the clip is larger than the width (and diameter) of a wire in plan view.

公开(公告)号：US20180090463A1

公开(公告)日：2018-03-29

申请号：US15816568

申请日：2017-11-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATOU ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L29/78 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/206

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US20150380378A1

公开(公告)日：2015-12-31

申请号：US14845357

申请日：2015-09-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATOU ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L29/78 ,  H01L23/31

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract translation: 一种半导体器件，包括：头部，固定到构成MOSFET的头部的半导体芯片;以及覆盖半导体芯片，插头等的绝缘树脂的密封体，还包括与插头连接地形成的漏极引线 从密封体的一个侧面，以及从密封体的一个侧面平行突出的源极引线和栅极引线，以及位于密封体的内部的电线， 半导体芯片和源极引线以及栅极引线，栅极电极焊盘布置在比栅极引线和源极引线更远离源极电极焊盘的位置。

公开(公告)号：US20240371817A1

公开(公告)日：2024-11-07

申请号：US18311561

申请日：2023-05-03

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yasutaka NAKASHIBA ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L21/683 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a first semiconductor chip mounted on a chip mounting portion via a first bonding material; and a second semiconductor chip mounted on the first semiconductor chip via a second bonding material. The first semiconductor chip includes: a protective film; and a first pad electrode exposed from the protective film in a first opening portion of the protective film. The second semiconductor chip is mounted on the first pad electrode of the first semiconductor chip via the second bonding material. The second bonding material includes: a first member being in contact with the first pad electrode; and a second member interposed between the first member and the second semiconductor chip. The first member is a conductive bonding material of a film shape, and the second member is an insulating bonding material of a film shape.

公开(公告)号：US20240312968A1

公开(公告)日：2024-09-19

申请号：US18588573

申请日：2024-02-27

Applicant: Renesas Electronics Corporation

Inventor： Toshiyuki HATA ,  Zen TOMIZAWA

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/34 ,  H01L23/495

CPC classification number: H01L25/16 ,  H01L23/34 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/40221 ,  H01L2224/83192 ,  H01L2924/13091

Abstract: A semiconductor device including: a first semiconductor chip having a first power transistor and a temperature sensing diode; and a second semiconductor chip having a second power transistor, but not having a temperature sensing diode.

公开(公告)号：US20230246002A1

公开(公告)日：2023-08-03

申请号：US18059646

申请日：2022-11-29

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yasutaka NAKASHIBA ,  Hiroshi YANAGIGAWA ,  Kazuhisa MORI ,  Toshiyuki HATA

IPC: H01L25/07 ,  H01L23/00 ,  H01L29/78

CPC classification number: H01L25/074 ,  H01L24/32 ,  H01L24/40 ,  H01L24/73 ,  H01L29/7805 ,  H01L29/7813 ,  H01L2224/32145 ,  H01L2224/40227 ,  H01L2224/73263 ,  H01L2924/13091 ,  H02M7/537

Abstract: A semiconductor device includes: a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode; and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode. A first source electrode and a first gate wiring are formed in a first front surface of the first semiconductor chip, and a first drain electrode is formed in a first back surface of the first semiconductor chip. A second source electrode and a second gate wiring are formed in a second front surface of the second semiconductor chip, and a second drain electrode is formed in a second back surface of the second semiconductor chip. The first front surface and the second front surface face each other such that the first source electrode and the second source electrode are in contact with each other via a conductive paste.

公开(公告)号：US20180090420A1

公开(公告)日：2018-03-29

申请号：US15657132

申请日：2017-07-22

Applicant: Renesas Electronics Corporation

Inventor： Toshiyuki HATA ,  Yuichi YATO

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/52 ,  H01L21/56 ,  H01L21/48

Abstract: An improvement is achieved in the performance of a semiconductor device. A second component mounting portion over which a first electronic component is mounted is connected to a coupling portion of a lead frame via a suspension lead. The suspension lead has a first portion between the second component mounting portion and the coupling portion and a second portion between the first portion and the coupling portion. The second portion has a third portion connected to the first portion and having a width smaller than a width of the first portion, a fourth portion connected to the first portion and having a width smaller than the width of the first portion, and a through hole (opening) located between the third and fourth portions. Each of the first, third, and fourth portions has the same thickness. After a sealing body is formed, a cutting jig is pressed against the suspension lead to cut the suspension lead.

公开(公告)号：US20140332866A1

公开(公告)日：2014-11-13

申请号：US14331289

申请日：2014-07-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATOU ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract translation: 一种半导体器件，包括：头部，固定到构成MOSFET的头部的半导体芯片;以及覆盖半导体芯片，插头等的绝缘树脂的密封体，还包括与插头连接地形成的漏极引线 从密封体的一个侧面，以及从密封体的一个侧面平行突出的源极引线和栅极引线，以及位于密封体的内部的电线， 半导体芯片和源极引线以及栅极引线，栅极电极焊盘布置在比栅极引线和源极引线更远离源极电极焊盘的位置。

公开(公告)号：US20140299979A1

公开(公告)日：2014-10-09

申请号：US14048804

申请日：2013-10-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadatoshi DANNO ,  Toshiyuki HATA ,  Yuichi MACHIDA

IPC: H01L23/495 ,  H01L21/48

CPC classification number: H01L23/49568 ,  H01L21/4875 ,  H01L23/3107 ,  H01L23/4006 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/97 ,  H01L2023/4056 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The reliability of a semiconductor device is improved. A semiconductor device has a first metal plate and a second metal plate electrically isolated from the first metal plate. Over the first metal plate, a first semiconductor chip including a transistor element formed thereover is mounted. Whereas, over the second metal plate, a second semiconductor chip including a diode element formed thereover is mounted. Further, the semiconductor device has a lead group including a plurality of leads electrically coupled with the first semiconductor chip or the second semiconductor chip. The first and second metal plates are arranged along the X direction in which the leads are arrayed. Herein, the area of the peripheral region of the first semiconductor chip in the first metal plate is set larger than the area of the peripheral region of the second semiconductor chip in the second metal plate.

Abstract translation: 提高了半导体器件的可靠性。 半导体器件具有与第一金属板电隔离的第一金属板和第二金属板。 在第一金属板上安装包括形成在其上的晶体管元件的第一半导体芯片。 而在第二金属板上安装包括形成在其上的二极管元件的第二半导体芯片。 此外，半导体器件具有包括与第一半导体芯片或第二半导体芯片电耦合的多个引线的引线组。 第一和第二金属板沿引线排列的X方向排列。 这里，将第一金属板中的第一半导体芯片的周边区域的面积设定为大于第二金属板中的第二半导体芯片的周边区域的面积。