公开(公告)号：US09691853B2

公开(公告)日：2017-06-27

申请号：US14600888

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taeho Kim ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/10 ,  H01L29/16 ,  H01L27/12 ,  H01L27/144 ,  H01L29/267 ,  H01L29/778 ,  H01L29/06 ,  H01L27/15 ,  H01L33/00 ,  H01L29/786 ,  H01L33/06 ,  H01L33/34

CPC classification number: H01L29/1033 ,  H01L27/1222 ,  H01L27/1443 ,  H01L27/156 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/778 ,  H01L29/78681 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/1136 ,  H01L33/0041 ,  H01L33/06 ,  H01L33/34 ,  Y02E10/547

Abstract: According to example embodiments, an electronic device includes channel layer including a graphene layer electrically contacting a quantum dot layer including a plurality of quantum dots, a first electrode and a second electrode electrically connected to the channel layer, respectively, and a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer. A gate insulating layer may be between the gate electrode and the channel layer.

公开(公告)号：US20170117430A1

公开(公告)日：2017-04-27

申请号：US15085100

申请日：2016-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/028 ,  H01L31/032

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US20170025508A1

公开(公告)日：2017-01-26

申请号：US15113079

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Changseok Lee ,  Seongjun Park

IPC: H01L29/417 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L29/41725 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/417 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an electrode connecting structure that includes an adhesion layer formed between a graphene layer and a metal layer and an electronic device having the electrode connecting structure. The electrode connecting structure may include an adhesion layer formed of a two-dimensional material provided between the graphene layer and the metal layer. The graphene layer may be a diffusion barrier, and the adhesion layer may stably maintain the interface characteristics of the graphene layer and the metal layer when the metal layer is formed on a surface of the graphene layer.

Abstract translation: 提供一种电极连接结构，其包括形成在石墨烯层和金属层之间的粘合层和具有电极连接结构的电子器件。 电极连接结构可以包括由设置在石墨烯层和金属层之间的二维材料形成的粘合层。 石墨烯层可以是扩散阻挡层，并且当金属层形成在石墨烯层的表面上时，粘合层可以稳定地保持石墨烯层和金属层的界面特性。

公开(公告)号：US20160343670A1

公开(公告)日：2016-11-24

申请号：US14932439

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Taeho Kim ,  Seongjun Park

IPC: H01L23/532 ,  H01L23/538 ,  H01L23/48 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/4985 ,  H01L23/5328

Abstract: A flexible device includes an electronic device having an electrode and a flexible interconnect layer formed on the electrode. The flexible interconnect layer includes a two-dimensional (2D) material and a conductive polymer to have high electric conductivity and flexibility. The flexible device includes a flexible interconnect layer of one or more layers, and in this case, includes a low-dielectric constant dielectric layer between the respective layers.

Abstract translation: 柔性器件包括具有形成在电极上的电极和柔性互连层的电子器件。 柔性互连层包括具有高电导率和柔性的二维（2D）材料和导电聚合物。 柔性器件包括一个或多个层的柔性互连层，并且在这种情况下，其包括各层之间的低介电常数介电层。

公开(公告)号：US20160314968A1

公开(公告)日：2016-10-27

申请号：US15134693

申请日：2016-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Hyeonjin Shin ,  Seongjun Park

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  C23C16/56 ,  C09D1/00

CPC classification number: H01L21/02568 ,  C09D1/00 ,  C23C16/305 ,  C23C16/56 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/42356 ,  H01L29/78681

Abstract: Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c  [Formula 1] wherein, in Formula 1, M, R1, R2, a, b, and c are the same as defined in the detailed description, and M′kX2  [Formula 2] wherein, in Formula 2, M′ and X are the same as defined in the detailed description.

公开(公告)号：US20160035676A1

公开(公告)日：2016-02-04

申请号：US14681313

申请日：2015-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun Im ,  Hyun Park ,  Soongun Lee ,  Chang Seok Lee ,  Sangwon Kim ,  Seongjun Park ,  Hyeon Jin Shin ,  Hanjin Lim

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/3213 ,  H01L29/06 ,  H01L27/108 ,  H01L21/02

CPC classification number: H01L23/53276 ,  H01L21/02527 ,  H01L21/32139 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/53271 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/0642 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.

Abstract translation: 半导体器件可以包括：衬底，其包括由器件隔离层限定的有源区，有源区中的源极/漏极区，在与有源区平行的第一方向上延伸的并且沿与第一方向交叉的第二方向布置的字线; 在第二方向上延伸并与位于字线之间的有源区的一部分交叉的位线图形，以及覆盖位线图案的至少一部分的石墨烯图案。

公开(公告)号：US12027589B2

公开(公告)日：2024-07-02

申请号：US17087968

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC: H01L29/16 ,  C01B32/186 ,  H01L21/02

CPC classification number: H01L29/1606 ,  C01B32/186 ,  H01L21/02384 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0262

Abstract: Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

公开(公告)号：US11086223B2

公开(公告)日：2021-08-10

申请号：US16426046

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Minsu Seol ,  Seongjun Park ,  Yeonchoo Cho

IPC: G03F7/36 ,  G03F7/11 ,  G03F7/09 ,  G03F7/16

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

公开(公告)号：US11034847B2

公开(公告)日：2021-06-15

申请号：US15944920

申请日：2018-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Seol ,  Sangwon Kim ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: C09D7/63 ,  G03F7/11 ,  G03F7/09 ,  G03F7/07 ,  G03F7/40 ,  C07F3/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/075

Abstract: Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. wherein in Formula 1, R1 to R8, X, and M are described in detail in the detailed description.

公开(公告)号：US10811604B2

公开(公告)日：2020-10-20

申请号：US16144257

申请日：2018-09-27

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Kibum Kim ,  Sanghun Lee ,  Yunho Kang

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.