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71 条记录 (耗时 0.035 秒)

    Non-sliding vacuum gate valve
    11.
    发明授权
    Non-sliding vacuum gate valve 失效
    非滑动真空闸阀

    公开(公告)号：US5626324A

    公开(公告)日：1997-05-06

    申请号：US306452

    申请日：1994-09-15

    申请人： Yoshinobu Nakamura ,  Yuzo Hayashi

    发明人： Yoshinobu Nakamura ,  Yuzo Hayashi

    IPC分类号： F16K3/18 ,  F16K51/00 ,  F16K51/02

    CPC分类号： F16K3/18 ,  F16K31/1225 ,  F16K51/02

    摘要： A non-sliding vacuum gate valve has a valve housing with a valve opening therethrough which is opened and closed by a gate valve body moved by a valve rod. The valve rod moves with linear and tilting movement so that the valve body tilts against the valve seat surrounding the valve opening. The valve rod is moved linearly by cylinder rods extending from a pair of cylinders attached to the valve housing on either side of the valve rod. A cam body having an angular cam slot is attached to a connecting member which spans between the end portions of the cylinder rods above the valve rod. The valve rod has a cam follower engaging the angular cam slot to provide the tilting movement of the valve rod and valve body responsive to the alternate reciprocal vertical movement of the cylinder rods, to open and close the valve opening.

    摘要翻译： 非滑动真空闸阀具有阀壳体，阀门开口穿过其中，阀门壳体由阀杆移动的闸阀阀体打开和关闭。 阀杆以线性和倾斜运动移动，使得阀体抵靠围绕阀开口的阀座倾斜。 阀杆由从连接在阀杆两侧的阀壳体上的一对气缸延伸的气缸杆线性地移动。 具有角度凸轮槽的凸轮体附接到跨过阀杆上方的气缸杆的端部之间的连接构件。 阀杆具有接合角形凸轮槽的凸轮从动件，以响应于气缸杆的交替的往复垂直运动来提供阀杆和阀体的倾斜运动，以打开和关闭阀开口。

    MANUFACTURING METHOD FOR CRYSTALLINE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
    14.
    发明申请
    MANUFACTURING METHOD FOR CRYSTALLINE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 审中-公开
    晶体半导体膜的制造方法，半导体器件和显示器件

    公开(公告)号：US20130140573A1

    公开(公告)日：2013-06-06

    申请号：US13701536

    申请日：2011-03-29

    申请人： Yoshinobu Nakamura

    发明人： Yoshinobu Nakamura

    IPC分类号： H01L29/786 ,  H01L21/02

    CPC分类号： H01L29/786 ,  H01L21/02104 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1229 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

    摘要： An object is to form a crystalline semiconductor film including a plurality of semiconductor regions with different average grain sizes by a simple manufacturing process.The surface of a crystalline silicon film 30b is irradiated with a laser beam 5, to crystallize the crystalline silicon film 30b. At this time, in the crystalline silicon film 30b below which a gate electrode 21 and a radiation portion 22 having a large area are provided, part of generated heat energy escapes to the radiation portion 22, and hence the crystalline silicon film 30b is insufficiently melted. For this reason, a formed first silicon region 30c1 has a large average grain size. On the other hand, in the crystalline silicon film 30b below which agate electrode 71 having a small area is provided, generated heat is resistant to escaping, and hence the crystalline silicon film 30b is completely melted. Thereby, the second silicon region 30c2 has a small average grain size.

    摘要翻译： 目的是通过简单的制造工艺形成包括具有不同平均晶粒尺寸的多个半导体区域的晶体半导体膜。 用激光束5照射结晶硅膜30b的表面，使结晶硅膜30b结晶。 此时，在设置有大面积的栅电极21和辐射部22的结晶硅膜30b中，产生的热能的一部分逸出到辐射部22，因此结晶硅膜30b不充分熔融 。 因此，形成的第一硅区域30c1具有大的平均粒径。 另一方面，在提供具有小面积的玛瑙电极71的下方的结晶硅膜30b中，产生的热量抵抗逸出，因此晶体硅膜30b完全熔化。 由此，第二硅区域30c2的平均粒径小。

    Thermistor device
    15.
    发明授权
    Thermistor device 失效
    热敏电阻器件

    公开(公告)号：US07709922B2

    公开(公告)日：2010-05-04

    申请号：US10594341

    申请日：2005-03-17

    申请人： Hidenori Takagi ,  Yoshinobu Nakamura ,  Kouhei Fujiwara

    发明人： Hidenori Takagi ,  Yoshinobu Nakamura ,  Kouhei Fujiwara

    IPC分类号： H01L31/058

    CPC分类号： H01C7/008 ,  H01C7/021 ,  H01C7/041

    摘要： A thermistor device having a high-speed response to temperature and a large ON/OFF ratio at the operating temperature. The thermistor device comprises a first layer of a first material having a positive temperature coefficient of resistance and a second layer of a second material having a semiconductivity and formed directly on the first layer. As the first material changes from conductive to a semiconductive or an insulative at or near the transition temperature TM-I, the interface between the first and second layer changes to a pn junction.

    摘要翻译： 一种在工作温度下具有高温响应和ON / OFF比大的热敏电阻器件。 热敏电阻器件包括具有正温度系数电阻的第一材料的第一层和具有半导电性并直接形成在第一层上的第二材料的第二层。 由于第一材料在转变温度TM-1处或接近转变温度TM-1时从导电变为半导体或绝缘，所以第一和第二层之间的界面改变为pn结。

    Eutectic Crystalline Sugar Alcohol and Manufacturing Method Thereof
    16.
    发明申请
    Eutectic Crystalline Sugar Alcohol and Manufacturing Method Thereof 审中-公开
    共晶结晶糖酒及其制造方法

    公开(公告)号：US20080020008A1

    公开(公告)日：2008-01-24

    申请号：US11793262

    申请日：2006-01-19

    申请人： Satoshi Okazaki ,  Yoshinori Toda ,  Yoshinobu Nakamura ,  Kazunori Shinji ,  Tatsuya Uraji

    发明人： Satoshi Okazaki ,  Yoshinori Toda ,  Yoshinobu Nakamura ,  Kazunori Shinji ,  Tatsuya Uraji

    IPC分类号： A23L1/236 ,  C07C31/26

    CPC分类号： C13B30/021 ,  A23L27/34 ,  A23L29/37 ,  C07C31/26

    摘要： To provide an eutectic crystalline sugar alcohol representing a single melting peak obtained by differential scanning calorimetry, which does not show any one of problems of requiring the addition of a comparatively large amount of a seed crystal to be added for crystallization and a prolonged aging period of several days for crystal growth as well as problems in production, such as an inefficient and complicated production process, while having excellent taste, low hygroscopicity, and excellent uniformity, grindability, and non-consolidation property; and a manufacturing method thereof, which comprises allowing a liquid composition containing two or more kinds of the sugar alcohol at a predetermined ratio to be added with a powder containing crystals of the same two or more kinds of the sugar alcohol at substantially the same usage ratio as that of the sugar alcohol, and kneading and aging a resulting mixture.

    摘要翻译： 提供代表通过差示扫描量热法获得的单一熔解峰的共晶结晶糖醇，其不显示任何一个问题，需要加入相对大量的用于结晶的晶种和延长的老化时间 晶体生长几天以及生产中的问题，如生产工艺低效复杂，同时具有优良的味道，低吸湿性，优异的均匀性，可磨性和非固化性; 其制造方法包括使含有两种以上糖醇的液体组合物以预定的比例加入到含有相同的两种或更多种糖醇的晶体的粉末中，其用量基本上相同的使用比例 与糖醇一样，并将其混合和老化。

    Image forming system with peripheral device and version upgrade process
    17.
    发明授权
    Image forming system with peripheral device and version upgrade process 有权
    具有外围设备和版本升级过程的图像形成系统

    公开(公告)号：US07312883B2

    公开(公告)日：2007-12-25

    申请号：US10270117

    申请日：2002-10-15

    申请人： Yoshinobu Nakamura ,  Keiji Sawada ,  Tsuyoshi Seto

    发明人： Yoshinobu Nakamura ,  Keiji Sawada ,  Tsuyoshi Seto

    IPC分类号： G06K15/00 ,  G06F3/12

    CPC分类号： G06F3/123 ,  G06F3/1204 ,  G06F3/1207 ,  G06F3/126 ,  G06F3/1284 ,  G06F8/65

    摘要： An image forming system comprises a request analysis section which analyzes an input image forming process request and specifies a peripheral device for use in executing an image forming process and a judgment section to judge whether or not a version upgrade is performed in the peripheral device. A process execution control section executes the process when it is judged that no version upgrade is being performed in the peripheral device, and instructs an input/output section to display, via a report section, a message indicating a version upgrade being performed when it is judged that a version upgrade is being performed. In this manner, user convenience during version upgrade time is enhanced.

    摘要翻译： 图像形成系统包括分析输入图像形成处理请求并指定用于执行图像形成处理的外围设备的请求分析部分和用于判断在外围设备中是否执行版本升级的判断部分。 当判断在外围设备中没有进行版本升级时，处理执行控制部分执行处理，并且指示输入/输出部分经由报告部分显示正在执行的版本升级的消息 判断正在执行版本升级。 这样，在版本升级时的用户便利性得到提高。

    CAPACITIVE PRESSURE SENSOR
    18.
    发明申请
    CAPACITIVE PRESSURE SENSOR 有权
    电容式压力传感器

    公开(公告)号：US20070095147A1

    公开(公告)日：2007-05-03

    申请号：US11553861

    申请日：2006-10-27

    申请人： Katsuya Kikuiri ,  Kiyoshi Sato ,  Tetsuya Fukuda ,  Yoshinobu Nakamura ,  Hiroyuki Kobayashi

    发明人： Katsuya Kikuiri ,  Kiyoshi Sato ,  Tetsuya Fukuda ,  Yoshinobu Nakamura ,  Hiroyuki Kobayashi

    IPC分类号： G01L9/12

    CPC分类号： G01L9/0073

    摘要： A capacitive pressure sensor is provided. The capacitive pressure sensor includes a glass substrate that has a pair of surfaces facing each other. A first silicon substrate has a fixed electrode passing through the glass substrate to be exposed at one surface and a projection passing through the glass substrate to be exposed at the one surface. A second silicon substrate is bonded to the one surface of the glass substrate and is disposed to face the fixed electrode so as to form a cavity between the second silicon substrate and the fixed electrode.

    摘要翻译： 提供电容式压力传感器。 电容式压力传感器包括具有彼此面对的一对表面的玻璃基板。 第一硅衬底具有穿过玻璃衬底的固定电极，以在一个表面上暴露，并且穿过玻璃衬底的突起在一个表面处露出。 第二硅衬底被结合到玻璃衬底的一个表面上并且被设置为面对固定电极，以在第二硅衬底和固定电极之间形成空腔。

    Golf ball
    20.
    发明授权
    Golf ball 失效
    高尔夫球

    公开(公告)号：US5068151A

    公开(公告)日：1991-11-26

    申请号：US474330

    申请日：1990-02-02

    申请人： Yoshinobu Nakamura

    发明人： Yoshinobu Nakamura

    IPC分类号： A63B37/00 ,  A63B37/12 ,  C08L23/08

    CPC分类号： C08L23/08 ,  A63B37/0003 ,  A63B37/0024 ,  A63B37/0031 ,  A63B37/0036 ,  A63B37/0074 ,  A63B37/0078 ,  A63B37/008 ,  A63B37/0087 ,  A63B37/0094 ,  C08L2205/02 ,  C08L23/0876 ,  Y10T428/2998

    摘要： Disclosed is a golf ball having improved impact resilience, which comprises a core and a cover covering the core, wherein the cover is a lithium neutralized ionomer resion which is a copolymer of 10 to 20% by weight of an alpha, beta-unsaturated carboxylic acid and the rest of ethylene, of which 20 to 70 mol % of carboxyl groups are neutralized with lithium ion, and the ionomer resin has a melt index of 0.5 to 5.0 and a shore D hardness of at least 60. The lithium neutralized ionomer resin may be combined with a di- or tri- valent metal neutralized ionomer resin which is a copolymer of 10 to 20% by weight of an alpha, beta-unsaturated carboxylic acid and the rest of ethylene, of which 40 to 70 mol % of carboxyl groups are neutralized with di- or tri- valent metal ion, and which has a melt index of 0.5 to 5.0 and a shore D hardness of 60 to 80.

    摘要翻译： 公开了具有改进的抗冲击性的高尔夫球，其包括芯和覆盖芯的盖，其中所述盖是锂中和的离子键离子，其是10至20重量％的α，β-不饱和羧酸 其余的乙烯，其中20〜70摩尔％的羧基用锂离子中和，离聚物树脂的熔融指数为0.5〜5.0，肖氏D硬度为60以上。锂中和的离聚物树脂可以 与二价或三价金属中和的离聚物树脂组合，其为10至20重量％的α，β-不饱和羧酸和其余的乙烯的共聚物，其中40至70摩尔％的羧基 用二价或三价金属离子中和，熔体指数为0.5〜5.0，肖氏D硬度为60〜80。