公开(公告)号：US06326638B1

公开(公告)日：2001-12-04

申请号：US09080121

申请日：1998-05-15

申请人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

发明人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

IPC分类号： H01L2715

CPC分类号： B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/02272 ,  H01S5/2068 ,  H01S5/2201 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/3403 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12 ,  Y10S257/918 ,  Y10T428/12528

摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

摘要翻译： 本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

公开(公告)号：US5143863A

公开(公告)日：1992-09-01

申请号：US683181

申请日：1991-04-09

申请人： Kiyoshi Ohnaka ,  Mototsugu Ogura

发明人： Kiyoshi Ohnaka ,  Mototsugu Ogura

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323

CPC分类号： H01S5/227 ,  H01S5/2231 ,  H01S5/2205 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2211 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/32325

摘要： According to the structure of the invention, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. What is more, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released.The invention also relates to the method of fabricating the laser composed in such structure.

摘要翻译： 根据本发明的结构，在GaAs衬底上形成厚度较大的一种导电类型，有源层和其它导电类型的AlGaInP包层的AlGaInP包层，并且将绝缘膜AlGaInP或非晶 在条纹的两侧形成折射率比AlGaInP包覆层小的层，其中光可以在与有源层平行的方向上被限制和引导，并且光可以沿着平行的方向被引导引导 到有源层和垂直于其的方向，使得可以呈现具有非常小的散光的激光。 此外，设置在绝缘膜的外侧的电流阻挡层AlGaInP或非晶层的导热性高，并且可以有效地释放在活性层附近产生的热量。 本发明还涉及以这种结构构成的激光器的制造方法。

公开(公告)号：US07470608B2

公开(公告)日：2008-12-30

申请号：US11359480

申请日：2006-02-23

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

IPC分类号： H01L21/44

CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/10 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/49107

摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

摘要翻译： 本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和 凹部121。

公开(公告)号：US07030417B2

公开(公告)日：2006-04-18

申请号：US10633040

申请日：2003-08-04

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/10 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/49107

摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

摘要翻译： 本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和 凹部121。

公开(公告)号：US20050167699A1

公开(公告)日：2005-08-04

申请号：US11061920

申请日：2005-02-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

IPC分类号： G11C11/56 ,  G11C13/00 ,  H01L21/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/1675

摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.

摘要翻译： 本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。 本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

公开(公告)号：US06707074B2

公开(公告)日：2004-03-16

申请号：US09895213

申请日：2001-07-02

申请人： Shigeo Yoshii ,  Kiyoshi Ohnaka

发明人： Shigeo Yoshii ,  Kiyoshi Ohnaka

IPC分类号： H01L2941

CPC分类号： H01L33/30 ,  H01L33/06 ,  H01L33/32 ,  H01S5/3215

摘要： A semiconductor light-emitting device has first and second semiconductor layers each of a first conductivity type, a third semiconductor layer of a second conductivity type provided between the first and second semiconductor layers, and an active layer provided between the second and third semiconductor layers to emit light with charge injected therein from the second and third semiconductor layers. A graded composition layer is provided between the active layer and the third semiconductor layer to have a varying composition which is nearly equal to the composition of the active layer at the interface with the active layer and to the composition of the third semiconductor layer at the interface with the third semiconductor layer.

摘要翻译： 半导体发光器件具有第一和第二半导体层，第一和第二半导体层各自具有第一导电类型，第二导电类型的第三半导体层，设置在第一和第二半导体层之间;以及有源层，设置在第二和第三半导体层之间， 从第二和第三半导体层发射具有注入其中的电荷的光。 在有源层和第三半导体层之间设置渐变组成层，以具有与有源层界面处的有源层的组成以及界面处的第三半导体层的组成几乎相等的变化的组成 与第三半导体层。

公开(公告)号：US6055253A

公开(公告)日：2000-04-25

申请号：US396509

申请日：1995-03-01

申请人： Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Hideto Adachi ,  Satoshi Kamiyama ,  Masaya Mannou ,  Takeshi Uenoyama

发明人： Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Hideto Adachi ,  Satoshi Kamiyama ,  Masaya Mannou ,  Takeshi Uenoyama

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/085

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3409

摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.

摘要翻译： 提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒，并且多量子势垒包括阻挡层和 井层相互交替。 半导体激光装置还包括限制在量子阱层中产生的光并且光导层未被掺杂的光导层。