Abstract:
In a micro-electromechanical structure, a rotor has a centroidal axis and includes a suspended structure which carries mobile electrodes. A stator carries fixed electrodes facing the mobile electrodes. The suspended structure is connected to a rotor-anchoring region via elastic elements. The stator includes at least one stator element, which carries a plurality of fixed electrodes and is fixed to a stator-anchoring region. One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis.
Abstract:
A method of producing an optical device including a Bragg grating formed in an optical waveguide, the method comprising: providing a support substrate; positioning the optical waveguide with respect to an optical source so as to achieve a desired optical coupling of optical power emitted by the optical source into the optical waveguide; attaching the waveguide to the support substrate in correspondence of a first location along the waveguide, said first location being at one side of the Bragg grating; attaching the waveguide to the support substrate in a correspondence of a second location along the waveguide, said second location being at an opposite side of the Bragg grating, so as to freeze a first stress condition in the Bragg grating.
Abstract:
A method of distributing an electric quantity through an electronic circuit for local exploitation by at least one circuit block of the electronic circuit that includes providing in the electronic circuit first and second conductive lines, the first conductive line distributing a first electric potential and the second conductive line carrying a second electric potential that is a dedicated reference electric potential for the first electric potential, the first and second electric potentials corresponding to the distributed electric quantity, and locally exploiting the distributed electric quantity by at least one circuit block of the electronic circuit, by locally reconstructing the distributed electric quantity from the first and second electric potentials without perturbing them, particularly without either sinking or injecting any significant current from or into the first and second conductive lines.
Abstract:
A system for encoding digital signals for transmission over a channel by allocating redundant channel encoding bits, includes at least one encoder configured for: subjecting the digital signals to multiple description coding to produce therefrom multiple description encoded signals, and allocating at least part of the redundant channel encoding bits to the multiple description encoded signals.
Abstract:
A method for storing user data on a hard disk drive system comprises distributing user data across a plurality of independent data sectors, with each data sector including a first header having a first preamble field and a first sync mark field, and a second header having a second preamble field and a second sync mark field. The method performs a first timing recovery phase for recovering signal amplitude by acquiring phase and frequency lock from at least one of the preamble fields, and performs a subsequent frame synchronous detection phase by acquiring a corresponding sync mark field.
Abstract:
A switched capacitance circuit including: a switched capacitance section, capable of receiving as input a signal and carrying out a sampling of said signal, the section comprising at least one group of capacitors each of which has a terminal connected to a common node; at least an operational stage including at least an input terminal connected to said common node, the operational stage providing a current to said common node for charging said group of capacitors during a sampling time interval of said signal. The circuit further includes an auxiliary circuit connected to said common node and capable of being activated/deactivated by an enabling signal for injecting a further current into said common node and increasing the current provided to said common node during at least one time interval equal to a fraction of said sampling interval.
Abstract:
A trimming structure for trimming functional parameters of an Integrated Circuit—IC—(100) includes a first (115a) and at least one second functional blocks (115b, . . . ,115n) with which a first (Vrg,a) and at least one second IC functional parameters (Vrg,b, . . . ,Vrg,n) are respectively associated. The trimming structure includes respective trimmable circuit structures (205a,210a, . . . ,205n,210n) included in the first and at least one second functional blocks, and trimming configuration storage (110) for storing trimming configurations for the trimmable circuit structures. A change in the trimming configuration of the first functional block causes a corresponding change in the trimming configuration of the second functional block. Further, a change in the second IC functional parameter in response to the corresponding change in the trimming configuration of the second functional block is proportional to the change in the first IC functional parameter consequent to the change in the trimming configuration of the first functional block.
Abstract:
A metal oxide semiconductor transistor integrated in a wafer of semiconductor material includes a gate structure located on a surface of the wafer and includes a gate oxide layer. The gate oxide layer includes a first portion having a first thickness and a second portion having a second thickness differing from the first thickness.
Abstract:
A method for sealing electronic devices formed on a semiconductor substrate includes forming at least one first conductive layer on a first portion of the semiconductor substrate for defining electronic devices, and forming a second conductive layer on a second portion of semiconductor substrate for also defining electronic devices. First regions are formed in the at least one first conductive layer for defining electronic devices, and a first sealing layer is formed on the whole semiconductor substrate to seal the first regions. Second regions are formed in the second conductive layer for defining electronic devices, and a second sealing layer is formed on the whole semiconductor substrate to seal the second regions.
Abstract:
A sense amplifier is provided that includes a measure branch receiving an input current to be detected, a reference branch receiving a reference current, equalizing means, and a comparator. The equalizing means selectively equalizes a measure node of the measure branch with a reference node of the reference branch, and the comparator compares a voltage at the measure node of the measure branch with a voltage at the reference node of the reference branch. The equalizing means are such that, when activated, equalization of the measure node with the reference node is virtual and substantially does not involve a flow of current between the measure node and the reference node of the reference branch. The sense amplifier is particularly suited for reading memory cells of a semiconductor memory. Also provided is a method for sensing an input current.