公开(公告)号：US09431439B2

公开(公告)日：2016-08-30

申请号：US14054114

申请日：2013-10-15

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

Inventor： Mineki Soga ,  Cristiano Niclass

IPC: H01L27/144 ,  G01S7/486 ,  H01L31/02 ,  H01L31/107

CPC classification number: H01L27/144 ,  G01S7/4865 ,  H01L31/02019 ,  H01L31/107

Abstract: There is provided a light detector having a light-receiving unit including a light-receiving element of a photon-counting type that receives incident light and outputs a binary pulse indicating presence or absence of photon incidence, and an integrating unit that calculates an output value in which a total of pulse widths of pulses is integrated over a measurement period.

Abstract translation: 提供一种光检测器，其具有光接收单元，该光接收单元包括接收入射光的光子计数型光接收元件，并输出指示存在或不存在光子入射的二进制脉冲;以及积分单元，其计算输出值 其中在测量周期内积分脉冲的总脉冲宽度。

公开(公告)号：US20160084713A1

公开(公告)日：2016-03-24

申请号：US14936716

申请日：2015-11-10

Applicant: Microsemi Corporation

Inventor： Michael J. McNutt

IPC: G01J3/50 ,  H01L27/144

CPC classification number: G01J3/50 ,  G01N21/55 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14647 ,  H01L31/02019 ,  H01L31/103

Abstract: A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.

Abstract translation: 具有可变光谱响应的固态光电探测器，可产生入射光的窄或宽响应谱。 一些实施例包括固态器件结构，其包括共享公共阳极区域的第一光电二极管和第二光电二极管。 施加到第一光电二极管和/或第二光电二极管的偏压可用于控制光电二极管和/或公共阳极区域的耗尽区的厚度，以改变光电检测器的光谱响应。 可以基于公共阳极区域的多个触点和/或耗尽区域的电容之间的电阻来控制耗尽区域和/或公共阳极区域的厚度。 实施例包括使用可变光谱响应光电检测器来确定入射光的光谱特性的控制电路和方法。

公开(公告)号：US09276021B2

公开(公告)日：2016-03-01

申请号：US13711467

申请日：2012-12-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsuhito Sakurai

IPC: H01L27/00 ,  H01L27/144 ,  H02J4/00 ,  H04N5/357 ,  H04N5/365 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H01L27/144 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/1464 ,  H02J4/00 ,  H04N5/3575 ,  H04N5/3658 ,  H04N5/3742 ,  H04N5/378 ,  Y10T307/707

Abstract: An electronic device according to one or more embodiments of the invention comprises a plurality of first output lines and a plurality of current to voltage convertors. Current signals from a plurality of signal sources are output to the first output lines. Each of the current to voltage convertors are electrically connected to a corresponding one of the first output lines. The current to voltage convertor includes a first amplification unit. An offset reduction unit in a subsequent stage of the current to voltage convertor is provided for each of the first output lines.

Abstract translation: 根据本发明的一个或多个实施例的电子设备包括多个第一输出线和多个电流到电压转换器。 来自多个信号源的电流信号被输出到第一输出线。 每个电流到电压转换器电连接到相应的一个第一输出线。 电流到电压转换器包括第一放大单元。 为每个第一输出线提供电流对电压转换器的后续级中的偏移减小单元。

公开(公告)号：US20160041030A1

公开(公告)日：2016-02-11

申请号：US14780687

申请日：2014-03-28

Applicant: RENSSELAER POLYTECHNIC INSTITUTE

Inventor： Tanuj SAXENA ,  Partha Sarathi DUTTA ,  Serguei Lvovich ROUMIANTSEV ,  Michael SHUR

IPC: G01J1/46 ,  G01J1/42 ,  H01L27/144

CPC classification number: G01J1/46 ,  G01J1/4228 ,  G01J2001/4426 ,  H01L27/144

Abstract: A sensor system, device and method for generating a wireless signal in response to a sensed illumination. A sensor is disclosed having: a photosensitive element; a device that converts a sensed illumination detected by the photosensitive element into a corresponding impedance response; and a wireless signal generator that generates a wireless output based on a characteristic of the corresponding impedance response, wherein the wireless output correlates to the sensed illumination.

Abstract translation: 一种用于响应于感测到的照明而产生无线信号的传感器系统，装置和方法。 公开了一种传感器，其具有：感光元件; 将由感光元件检测到的感测照明转换成相应的阻抗响应的装置; 以及无线信号发生器，其基于相应的阻抗响应的特性产生无线输出，其中所述无线输出与所感测的照明相关。

公开(公告)号：US20160027950A1

公开(公告)日：2016-01-28

申请号：US14878849

申请日：2015-10-08

Applicant: The Trustees of Dartmouth College

Inventor： Jifeng Liu ,  Haofeng Li ,  Xiaoxin Wang

IPC: H01L31/0687 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/103 ,  H01L31/109 ,  H01L31/18 ,  H01L31/0725

CPC classification number: H01L31/0687 ,  C30B1/023 ,  C30B29/46 ,  G02B6/12004 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L27/144 ,  H01L27/1446 ,  H01L31/02325 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/0725 ,  H01L31/103 ,  H01L31/109 ,  H01L31/1812 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/204 ,  Y02E10/544 ,  Y02P70/521

Abstract: Methods are discussed for producing single-crystal shapes on amorphous materials. A first method deposits a layer of Germanium-Tin (GeSn) alloy comprising between three and sixteen atomic-percent tin on material incapable of seeding crystal formation, the layer is photolithographically defined into a shape having a point having radius less than 100 nanometers; and the shape is annealed by heating to a temperature below 450 degrees Celsius. A second method also photolithographically defines a shape on a layer of GeSn, then uses a laser to heat and crystalize seed spot on the shape; and anneals the shape by heating and thereby crystalizing additional GeSn alloy of the shape. In embodiments, the crystalized GeSn serves to seed InGaP and/or InGaAs layers that may serve together with the GeSn as layers of a tandem photovoltaic cell.

Abstract translation: 讨论了在无定形材料上制备单晶形状的方法。 第一种方法是在不能接种晶体形成的材料上沉积一层包含三到十六个原子百分比的锡的锗 - 锡（GeSn）合金，该层被光刻地定义为具有半径小于100纳米的点的形状; 并且通过加热至低于450℃的温度来退火形状。 第二种方法还用光刻法定义GeSn层上的形状，然后使用激光来加热晶体结晶晶种; 并通过加热退火形状，从而使另外形状的GeSn合金结晶。 在实施例中，晶体化的GeSn用于使可能与GeSn一起作为串联光伏电池层的InGaP和/或InGaAs层接种。

公开(公告)号：US20150297167A1

公开(公告)日：2015-10-22

申请号：US14789599

申请日：2015-07-01

Applicant: FUJIFILM Corporation

Inventor： Tetsuya TSUJI

IPC: A61B6/00

CPC classification number: H05G1/44 ,  A61B6/4233 ,  A61B6/4283 ,  A61B6/52 ,  A61B6/542 ,  A61B6/548 ,  A61B2560/0214 ,  A61B2560/0266 ,  A61N5/1071 ,  G01N2223/306 ,  G01T1/02 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14605 ,  H01L27/14812 ,  H05G1/38 ,  H05G1/56

Abstract: An FPD detects an X-ray image of an object. The FPD includes a plurality of pixels arranged in its image capturing field. Each pixel receives X-rays emitted from an X-ray source, and outputs a pixel value in accordance with an X-ray dose applied thereto. A pixel determiner determines a minimum-value pixel out of the pixels based on the pixel values of the pixels. The minimum-value pixel is a pixel whose pixel value is the lowest. The pixel determiner sets the minimum-value pixel as an exposure control pixel. A comparator compares a first integrated value, which is an integrated value of the pixel values of the minimum-value pixel, with a predetermined first threshold value. The comparator performs X-ray emission control such that, when the first integrated value has reached the first threshold value, the X-ray source stops emitting the X-rays.

Abstract translation: FPD检测物体的X射线图像。 FPD包括布置在其图像捕获领域中的多个像素。 每个像素接收从X射线源发射的X射线，并且根据应用于其的X射线剂量输出像素值。 像素确定器基于像素的像素值来确定像素中的最小值像素。 最小值像素是其像素值最低的像素。 像素确定器将最小值像素设置为曝光控制像素。 比较器将作为最小值像素的像素值的积分值的第一积分值与预定的第一阈值进行比较。 比较器执行X射线发射控制，使得当第一积分值达到第一阈值时，X射线源停止发射X射线。

公开(公告)号：US09052267B2

公开(公告)日：2015-06-09

申请号：US14513352

申请日：2014-10-14

Applicant: NXP B.V.

Inventor： Youri Victorovitch Ponomarev ,  David Tio Castro ,  Roel Daamen

IPC: H01L21/00 ,  G01N27/04 ,  G01N27/12 ,  G01N27/22 ,  H01L51/00 ,  H01L51/42 ,  G01N33/00 ,  H01L27/144 ,  H01L31/18

CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

Abstract: Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46′) in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46″) over the first area. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括：包括至少一个光传感器（12）的基板（10） 在所述衬底上的互连结构（20）; 所述互连结构上的至少一个钝化层（30），所述钝化层包括所述至少一个光传感器上的第一区域; 以及气体传感器，例如至少部分地在所述至少一个钝化层的另一区域上的湿度传感器（50），其中所述气体传感器包括在第一电极（42）和第二电极 第二电极（44），气敏层还包括在第一区域上的部分（46“）。 还公开了制造这种IC的方法。

公开(公告)号：US20150048471A1

公开(公告)日：2015-02-19

申请号：US14382211

申请日：2013-01-18

Applicant: Juergen Hasch ,  Uwe Wostradowski ,  Stefan Gaier ,  Elena Pancera ,  Carsten Potratz

Inventor： Juergen Hasch ,  Uwe Wostradowski ,  Stefan Gaier ,  Elena Pancera ,  Carsten Potratz

IPC: H01L23/66 ,  H01L21/48 ,  H01L23/528 ,  H01L27/144

CPC classification number: H01L23/66 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/293 ,  H01L23/528 ,  H01L25/16 ,  H01L27/144 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2924/0002 ,  H01P3/121 ,  H01P5/107 ,  H01L2924/00

Abstract: A semiconductor module, having an integrated circuit, a rewiring layer for externally connecting the integrated circuit, and at least one waveguide integrated into the semiconductor module for radar signals having a conductive pattern, which laterally surrounds the interior of the waveguides, the integrated circuit and the at least one waveguide being embedded, at least in regions, in a housing material of the semiconductor module; as well as a radar sensor, a motor vehicle radar system having such a semiconductor module, and a method for producing a semiconductor module.

Abstract translation: 具有集成电路的半导体模块，用于外部连接集成电路的重新布线层和集成到半导体模块中的至少一个波导，用于具有导电图案的雷达信号，横向地围绕波导的内部，集成电路和 所述至少一个波导至少在半导体模块的外壳材料的区域中嵌入; 以及具有这种半导体模块的雷达传感器，机动车辆雷达系统以及半导体模块的制造方法。

公开(公告)号：US08896073B2

公开(公告)日：2014-11-25

申请号：US13745918

申请日：2013-01-21

Applicant: NXP B.V.

Inventor： Youri Victorovitch Ponomarev ,  David Tio Castro ,  Roel Daamen

IPC: H01L27/14 ,  G01N27/22 ,  H01L51/42 ,  H01L51/00 ,  G01N27/12

CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

Abstract: Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括：基板，包括至少一个光传感器; 在衬底上的互连结构; 所述互连结构上的至少一个钝化层，所述钝化层包括所述至少一个光传感器上的第一区域; 以及气体传感器，例如至少部分地在所述至少一个钝化层的另一区域上的湿度传感器，其中所述气体传感器包括位于第一电极和第二电极之间的气体敏感层，所述气体敏感层还包括 在第一区域的部分。 还公开了制造这种IC的方法。

公开(公告)号：US20140264400A1

公开(公告)日：2014-09-18

申请号：US14298875

申请日：2014-06-06

Applicant: Cornell University

Inventor： Michal Lipson ,  Yoon Ho Lee

IPC: H01L25/16 ,  H01L33/58 ,  H01L25/00 ,  H01L31/0232

CPC classification number: H01L25/167 ,  G02B6/12004 ,  G02B6/12007 ,  H01L23/13 ,  H01L25/50 ,  H01L27/144 ,  H01L31/0232 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques, systems, and devices are disclosed to provide multilayer platforms for integrating semiconductor integrated circuit dies, optical waveguides and photonic devices to provide intra-die or inter-die optical connectivity. For example, an integrated semiconductor device having integrated circuits respectively formed on different semiconductor integrated circuit dies is provided to include a carrier substrate structured to form openings on a top side of the carrier substrate; semiconductor integrated circuit dies fixed to bottom surfaces of the openings of the carrier substrate, each semiconductor integrated circuit die including a semiconductor substrate and an integrated circuit formed on the semiconductor substrate to include one or more circuit components, and each semiconductor integrated circuit die being structured to have a top surface substantially coplanar with the top side of the carrier substrate; and planar layers formed on top of the top surfaces of the semiconductor integrated circuit dies and the top side of the carrier substrate to include optical waveguides and photonic devices to provide (1) intra-die optical connectivity for photonic devices associated with a semiconductor integrated circuit die, or (2) inter-die optical connectivity for photonic devices associated with different semiconductor integrated circuit dies.

Abstract translation: 公开了技术，系统和设备以提供用于集成半导体集成电路管芯，光波导和光子器件的多层平台，以提供管芯内或管芯间光连接。 例如，具有分别形成在不同的半导体集成电路管芯上的集成电路的集成半导体器件被提供以包括构造为在载体衬底的顶侧上形成开口的载体衬底; 半导体集成电路模具固定到载体基板的开口的底表面，每个半导体集成电路管芯包括半导体衬底和形成在半导体衬底上的集成电路，以包括一个或多个电路部件，并且每个半导体集成电路管芯被构造 具有与载体基板的顶侧基本上共面的顶表面; 以及形成在半导体集成电路管芯的顶表面的顶部和载体衬底的顶侧上的平面层，以包括光波导和光子器件，以提供（1）与半导体集成电路相关联的光子器件的管芯内光连接性 （2）与不同半导体集成电路管芯相关的光子器件的管芯间连接。