公开(公告)号：US20070247379A1

公开(公告)日：2007-10-25

申请号：US11736219

申请日：2007-04-17

申请人： Kiyoshi Oshima ,  Osamu Kagaya ,  Koji Ikawa ,  Toshifumi Funatsu

发明人： Kiyoshi Oshima ,  Osamu Kagaya ,  Koji Ikawa ,  Toshifumi Funatsu

IPC分类号： H01Q1/32

CPC分类号： H01Q1/1278 ,  H01Q1/36

摘要： A plurality of heating wires 2 have a plurality of detours 1 formed therein, the heating wires 2 have inlets 10 formed therein for connection with the detours 1, and both ends of each of the inlets 10 and both ends of each of the detours 1 are connected by a pair of connection lines 9. When a shorter one of the shortest spacing between the paired connection lines 9 and the shortest spacing between both ends of the inlets 10 is called We, when the maximum width of the detours 1 in a horizontal direction is called Wr, when a received frequency has a wavelength of λ0 in the air, and when the formula of {(Wr−We)/2}=L1 is established, the formula of L1≧0.0053·λ0 is satisfied.

摘要翻译： 多个加热丝2具有形成在其中的多个弯曲线1，加热丝2具有形成在其中的入口10，用于与弯道1连接，并且每个入口10的两端和每个弯路1的两端均为 通过一对连接线9连接。 当成对的连接线9之间的最短间隔中的较短的一个和入口10的两端之间的最短间隔中较短的一个称为W＆lt; E＆gt;时，当沿水平方向的曲折1的最大宽度为 当接收到的频率在空气中具有λ 0的波长时，并且当{（W-r-W）的公式 ＆lt; 1＆gt;）/ 2} = L＆lt; 1＆lt; 1＆lt; 1＆gt;中，L 1的公式= 满意

公开(公告)号：US20070001300A1

公开(公告)日：2007-01-04

申请号：US11451579

申请日：2006-06-13

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/34

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US07149024B2

公开(公告)日：2006-12-12

申请号：US11130415

申请日：2005-05-17

申请人： Hiroyuki Arima ,  Osamu Kagaya ,  Masanobu Okayasu ,  Tetsuya Kato ,  Michihide Sasada

发明人： Hiroyuki Arima ,  Osamu Kagaya ,  Masanobu Okayasu ,  Tetsuya Kato ,  Michihide Sasada

IPC分类号： G02B26/00

CPC分类号： H01L24/80 ,  B82Y20/00 ,  G02F1/0121 ,  G02F1/01708 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4911 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01S5/0261 ,  H01S5/0265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides an optical modulator module comprising: a chip carrier; a semiconductor optical modulator for modulating light based on an electronic signal; a strip conductor electrically connected to the semiconductor optical modulator; a first resistor electrically connected to the semiconductor optical modulator; and a second resistor electrically connected in series to the first resistor; wherein the semiconductor optical modulator, the strip conductor, and the first and second resistors are disposed on the chip carrier; and wherein the frequency characteristics of the optical modulator module is adjusted by selecting to short or not to short both ends of the first resistor by use of a wire as necessary.

摘要翻译： 本发明提供了一种光调制器模块，包括：芯片载体; 用于基于电子信号调制光的半导体光调制器; 电连接到半导体光调制器的带状导体; 电连接到所述半导体光调制器的第一电阻器; 以及与所述第一电阻器串联电连接的第二电阻器; 其中所述半导体光调制器，所述带状导体以及所述第一和第二电阻器设置在所述芯片载体上; 并且其中通过根据需要通过使用导线选择短或不缩小第一电阻器的两端来调整光调制器模块的频率特性。

公开(公告)号：US07130100B2

公开(公告)日：2006-10-31

申请号：US11131309

申请日：2005-05-18

申请人： Osamu Kagaya ,  Noriko Sasada ,  Kazuhiko Naoe

发明人： Osamu Kagaya ,  Noriko Sasada ,  Kazuhiko Naoe

IPC分类号： G02F1/00 ,  G02F1/03 ,  G02B6/36 ,  G02B6/12 ,  H04B10/04

CPC分类号： G02F1/0121 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014

摘要： Even for a driving impedance of 25 Ω, high transmission waveform quality of an optical transmission module is maintained using an optical modulator element designed for a driving impedance of 50 Ω. The above can be achieved by adopting an optical module 100 that includes an input electrode for electrical signals, an optical modulator element for modulating laser light using the electrical signals, a termination resistance element, a first bonding wire for connecting the input electrode and the optical modulator element, a second bonding wire for connecting the optical modulator element and the termination resistance element, and a third bonding wire for connecting the input electrode and the termination resistance element.

公开(公告)号：US07068691B2

公开(公告)日：2006-06-27

申请号：US10642373

申请日：2003-08-15

申请人： Norio Chujo ,  Osamu Kagaya

发明人： Norio Chujo ,  Osamu Kagaya

IPC分类号： H01S3/00

CPC分类号： H04B10/58 ,  H01S5/02284 ,  H01S5/0428 ,  H01S5/0622 ,  H04B10/504

摘要： In a directly modulated optical module, the input current to drive the semiconductor laser is controlled so as to make a rate of change in fall time smaller than a rate of change in rise time (inclination) in order to improve the eye opening of an eye pattern and extend the transmission distance. In addition, the input current is overshot at least during the period of transient state following the rising edge.

摘要翻译： 在直接调制的光学模块中，控制用于驱动半导体激光器的输入电流，以使得下降时间的变化率小于上升时间（倾斜度）的变化率，以改善眼睛的开眼 模式并延长传输距离。 此外，输入电流至少在上升沿之后的瞬态期间过冲。

公开(公告)号：US20060012425A1

公开(公告)日：2006-01-19

申请号：US11230467

申请日：2005-09-21

申请人： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

发明人： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

IPC分类号： H03F3/68

CPC分类号： H03F1/56 ,  H03F1/0277 ,  H03F1/565 ,  H03F3/602 ,  H03F3/72 ,  H03F2203/7209

摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

公开(公告)号：US06865399B2

公开(公告)日：2005-03-08

申请号：US10062529

申请日：2002-02-05

申请人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

发明人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

IPC分类号： H04B1/40 ,  H04B1/00 ,  H04B1/04

CPC分类号： H03F3/245 ,  H03F1/56 ,  H03F3/195 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/18 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/405 ,  H03F2200/429 ,  H03F2203/7209 ,  H03F2203/7221 ,  H04B1/005 ,  H04B1/006 ,  H04B1/406

摘要： In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

摘要翻译： 在对应于具有以两种不同频率工作的RF功率模块的双频带的移动电话装置中，向这种RF功率模块的输出电路提供公共谐波控制电路，以实现更高的效率 两个频段的谐波功率。 此外，还提供了用于选择性地设置偏置的装置，使得可以根据各个通信系统所需的输出功率来获得最大效率，其中从控制单元的CPU输出的偏置控制信号与选择频率的 移动电话机身。

公开(公告)号：US06636118B1

公开(公告)日：2003-10-21

申请号：US09914678

申请日：2001-11-14

申请人： Cyushiro Kusano ,  Eiichi Hase ,  Hideyuki Ono ,  Osamu Kagaya ,  Yasunari Umemoto ,  Takahiro Fujita ,  Kiichi Yamashita

发明人： Cyushiro Kusano ,  Eiichi Hase ,  Hideyuki Ono ,  Osamu Kagaya ,  Yasunari Umemoto ,  Takahiro Fujita ,  Kiichi Yamashita

IPC分类号： H03F304

CPC分类号： H01L27/0255 ,  H03F1/52 ,  H03F3/195 ,  H03F2200/444 ,  H03F2203/21178

摘要： In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.

摘要翻译： 在其中级联多个异质结双极型晶体管（npn型HBT）的多级结构的高频功率放大器模块中，将多个pn结二极管串联连接的保护电路连接在 每个HBT的集电极和发射极。 p侧连接到集电极侧，并且n侧连接到发射极侧。 其中pn结二极管的数量等于或小于pn结二极管串联的保护电路连接在基极和发射极之间。 p侧连接到基极侧，并且n侧连接到发射极侧。 通过该结构，由于天线侧的负载的波动，在集电极和发射极两端施加过电压的情况下，集电端子被保护电路的导通状态电压钳位，HBT可以 防止被摧毁。 由于类似的保护电路组装在基极和发射极之间，即使在制造高频功率放大器模块时操作者接触模块时，也可以防止HBT被保护电路的钳位效应所破坏 基极和发射极以及集电极和发射极之间的保护电路。 因此，可以实现高频功率放大器模块和无线通信装置的制造成品率的提高，并且可以防止由无线通信装置的负载阻抗的波动引起的破坏。

公开(公告)号：US06535069B2

公开(公告)日：2003-03-18

申请号：US10084364

申请日：2002-02-28

申请人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

发明人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

IPC分类号： H03F304

CPC分类号： H03F3/72 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/306 ,  H03F2200/309 ,  H03F2200/39 ,  H03F2200/429 ,  H04B1/0053 ,  H04B1/0458

摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive a first frequency f1 and second frequency f2 (f2=2×f1). It includes a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit has a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at harmonics of a frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at harmonics of a frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for matching with f1 and f2.

摘要翻译： 一种能够发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的双频带型移动通信装置的射频功率放大器模块。 它包括具有匹配电路的f1和f2处的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。 输出电路具有连接到输出晶体管的漏极端的传输线，串联连接到传输线的并联谐振电路，以使谐振频率为频率f2的两倍的频率，串联谐振电路设置在 谐振电路和接地谐振频率为频率f2的频率的谐波，以及与并联谐振电路的另一端串联设置的与f1和f2匹配的输出匹配电路。

公开(公告)号：US06366788B1

公开(公告)日：2002-04-02

申请号：US09674072

申请日：2000-10-26

申请人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

发明人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

IPC分类号： H04B138

CPC分类号： H04B1/006 ,  H03F3/193 ,  H03F3/604 ,  H03F3/72 ,  H03F2200/306 ,  H03F2200/309 ,  H03F2200/39 ,  H03F2200/429 ,  H04B1/005 ,  H04B1/406

摘要： In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

摘要翻译： 在对应于具有以两种不同频率工作的RF功率模块的双频带的移动电话装置中，向这种RF功率模块的输出电路提供公共谐波控制电路，以实现更高的效率 两个频段的谐波功率。 此外，还提供了用于选择性地设置偏置的装置，使得可以根据各个通信系统所需的输出功率来获得最大效率，其中从控制单元的CPU输出的偏置控制信号与选择频率的 移动电话机身。