公开(公告)号：US20170069786A1

公开(公告)日：2017-03-09

申请号：US15180630

申请日：2016-06-13

Applicant: QD VISION, INC.

Inventor： JUSTIN W. KAMPLAIN

IPC: H01L33/06 ,  C22C1/00 ,  H01L33/26 ,  C22C30/06

CPC classification number: H01L33/06 ,  C22C1/00 ,  C22C30/06 ,  H01L33/26

Abstract: Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

Abstract translation: 公开了一种半导体纳米晶体，其包括合金，其包含包含III族元素，II族元素，锑和VI族元素的合金; 一种制备半导体纳米晶体的方法，包括含有包含III族元素，II族元素，锑和VI族元素的合金的合金，以及包含发光材料的发光器件，该发光器件包括半导体纳米晶体，该半导体纳米晶体包括合金， 合金，包括III族元素，II族元素，锑和VI族元素。

公开(公告)号：US09444008B2

公开(公告)日：2016-09-13

申请号：US14246275

申请日：2014-04-07

Applicant: QD VISION, INC.

Inventor： Dorai Ramprasad ,  Craig Breen ,  Jonathan S. Steckel

IPC: C09K11/08 ,  H01L33/28 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L29/225 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/225 ,  H01L33/0029 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/2991 ,  Y10T428/2993

Abstract: A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

公开(公告)号：US20150171268A1

公开(公告)日：2015-06-18

申请号：US14521225

申请日：2014-10-22

Applicant: QD VISION, INC.

Inventor： CRAIG BREEN ,  WENHAO LIU

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09D11/52 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/0029 ,  H01L33/28 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/95

Abstract: A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. Products including quantum dots described herein are also disclosed.

Abstract translation: 提供涂覆的量子点，其中量子点的特征在于在90℃或更高的温度下具有固态光致发光外量子效率，其为半导体纳米晶体的固态光致发光外部量子效率的至少95％ 还公开了包括本文所述量子点的产品。

公开(公告)号：US20150014586A1

公开(公告)日：2015-01-15

申请号：US14284292

申请日：2014-05-21

Applicant: QD VISION, INC.

Inventor： WENHAO LIU ,  CRAIG BREEN

IPC: C30B7/14 ,  C30B7/08 ,  H01L33/28 ,  C30B29/68 ,  C30B29/48 ,  C30B7/00 ,  C30B19/12

CPC classification number: C30B7/14 ,  B22F1/0018 ,  B22F1/025 ,  B22F9/24 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C22C1/1026 ,  C22C20/00 ,  C30B7/005 ,  C30B7/08 ,  C30B19/12 ,  C30B29/48 ,  C30B29/68 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: Quantum dots and methods of making quantum dots are provided.

Abstract translation: 提供量子点和制造量子点的方法。

公开(公告)号：US20150009686A1

公开(公告)日：2015-01-08

申请号：US14328542

申请日：2014-07-10

Applicant: QD VISION, INC.

Inventor： WARREN PUMYEA ,  SRIDHAR SADASIVAN ,  SUCHIT SHAH

IPC: F21V8/00 ,  F21K99/00

CPC classification number: G02B6/0031 ,  F21K9/62 ,  G02B6/003 ,  G02B6/0068 ,  G02B6/0073 ,  G02B6/0085 ,  G02B6/009 ,  G02B6/0091

Abstract: A light mixing chamber includes a housing having a channel formed therein, with the channel exposed to an exterior of the housing. A chamber is formed in the housing, and an aperture formed in the housing connects the chamber to the channel. The chamber may house an LED, with an optical member being retained within the channel. A light guide plate may be positioned on an exterior of the housing outside the channel.

Abstract translation: 光混合室包括具有形成在其中的通道的壳体，其中通道暴露于壳体的外部。 腔室形成在壳体中，并且形成在壳体中的孔将腔室连接到通道。 该室可容纳LED，光学构件保持在通道内。 导光板可以定位在外壳外部的通道外。

公开(公告)号：US08906804B2

公开(公告)日：2014-12-09

申请号：US13925572

申请日：2013-06-24

Applicant: QD Vision, Inc.

Inventor： Seth Coe-Sullivan ,  Maria J. Anc ,  LeeAnn Kim ,  John E. Ritter ,  Marshall Cox ,  Craig Breen ,  Vladimir Bulovic ,  Ioannis Kymissis ,  Robert F. Praino, Jr.

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  B82Y30/00 ,  H01L51/50 ,  B82Y40/00 ,  B82Y20/00 ,  C01B31/02 ,  H01L21/02 ,  H01L51/56

CPC classification number: H01L21/02628 ,  B05D2401/32 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  H01L21/02521 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/0271 ,  H01L51/5012 ,  H01L51/56 ,  Y10T428/31504

Abstract: Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.

Abstract translation: 公开了将纳米材料沉积到基底上的方法。 还公开了可用于沉积纳米材料的组合物，制造包括纳米材料的装置的方法，以及用于沉积纳米材料的系统和装置。

公开(公告)号：US20140312300A1

公开(公告)日：2014-10-23

申请号：US14246275

申请日：2014-04-07

Applicant: QD VISION, INC.

Inventor： DORAI RAMPRASAD ,  CRAIG BREEN ,  JONATHAN S. STECKEL

IPC: H01L33/28 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/225 ,  H01L33/0029 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/2991 ,  Y10T428/2993

Abstract: A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

公开(公告)号：US20140227862A1

公开(公告)日：2014-08-14

申请号：US14182076

申请日：2014-02-17

Applicant: QD VISION, INC.

Inventor： Inja Song ,  Craig Breen

IPC: H01L21/02

CPC classification number: H01L21/02601 ,  B01J13/22 ,  B82Y30/00 ,  H01L21/02518 ,  H01L21/02628

Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.

Abstract translation: 在一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物，引入一种或多种阳离子前体和一种或多种阴离子前体 进入第一混合物以形成用于形成半导体材料的反应混合物，使反应混合物中的前体在不加入酸化合物的条件下，在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应 半导体纳米晶体的至少一部分的表面，并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。 在另一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物，引入酰胺化合物，一种或多种阳离子前体和一种或多种 阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物，并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分 半导体纳米晶体的至少一部分的外表面。 还公开了包括根据上述方法生长的涂层的半导体纳米晶体。

公开(公告)号：US20140061584A1

公开(公告)日：2014-03-06

申请号：US13683365

申请日：2012-11-21

Applicant: QD Vision, Inc.

Inventor： Gagan Mahan ,  Peter T. Kazlas

IPC: H01L33/64 ,  H01L31/024

CPC classification number: H01L31/024 ,  H01L23/4334 ,  H01L31/052 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  Y02E10/50 ,  H01L2924/00

Abstract: A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles.

Abstract translation: 公开了一种装置，其包括装置材料的布置以及包括在其至少一部分上设置的具有散热特性的材料的层。 该装置还可以包括布置在装置材料装置的顶表面和包含具有散热特性的材料的层之间的交错层。 阻挡层可以进一步包括在器件材料的布置和包含具有散热特性的材料的层之间。 还公开了方法。 在某些实施例中，器件包括量子限制的半导体纳米颗粒。

公开(公告)号：US20140054540A1

公开(公告)日：2014-02-27

申请号：US13900272

申请日：2013-05-22

Applicant: QD Vision, Inc.

Inventor： Zhaoqun Zhou ,  Peter T. Kazlas ,  Marshall Cox

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/00 ,  H01L31/0352 ,  H01L21/02 ,  H01L31/18

CPC classification number: H01L29/0665 ,  H01L21/02601 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/426 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.

Abstract translation: 制造包含半导体纳米晶体的器件的方法包括形成能够在第一电极上传输电荷的第一层，其中形成第一层包括在第一电极上设置金属层，并至少将金属层的表面氧化成与第一电极相对的第一层 电极以形成金属氧化物，在氧化的金属表面上设置包含半导体纳米晶体的层，以及在包含半导体纳米晶体的层上设置第二电极。 一种器件包括设置在第一电极和第二电极之间的包含半导体纳米晶体的层，以及能够传输设置在包括半导体纳米晶体的层之间的电荷的第一层，其中电极的一个电极包括金属层 其中至少在面向包含半导体纳米晶体的层的金属层的表面在其上设置半导体纳米晶体之前被氧化。