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公开(公告)号：US20160322198A1
公开(公告)日：2016-11-03
申请号：US14701320
申请日：2015-04-30
Applicant: Infineon Technologies AG
Inventor： Ewald Wiltsche , Peter Zupan , Werner Schustereder , Moriz Jelinek , Robert Eberwein , Friedrich Kroener
CPC classification number: H01J37/3171 , C23C14/48 , H01J37/08 , H01J2237/081 , H01J2237/0822
Abstract: An ion source for an implanter includes a first solid state source electrode disposed in an ion source chamber. The first solid state source electrode includes a source material coupled to a first negative potential node. A second solid state source electrode is disposed in the ion source chamber. The second solid state source electrode includes the source material coupled to a second negative potential node, and the first solid state source electrode and the second solid state source electrode are configured to produce ions to be implanted by the implanter.
Abstract translation: 用于注入机的离子源包括设置在离子源室中的第一固态源电极。 第一固态源极包括耦合到第一负电位节点的源极材料。 第二固态源电极设置在离子源室中。 第二固体源电极包括耦合到第二负电位节点的源极材料，并且第一固态源极电极和第二固态源极电极被配置为产生待被注入器植入的离子。
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Patent Agency Ranking
公开(公告)号：US09482762B2
公开(公告)日：2016-11-01
申请号：US14471075
申请日：2014-08-28
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Johannes Hacker
Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.
Abstract translation: 在各种实施例中，提供了一种伽马射线检测器。 伽马射线检测器可以包括转换器元件，其被配置为当伽马射线至少部分地移动通过转换器元件时释放电子。 伽马射线检测器还可以包括半导体检测器，布置成接收电子并且被配置为当电子至少部分地移动通过半导体检测器时产生信号; 以及放大器电路，耦合到半导体检测器并被配置为放大由半导体检测器产生的信号。 在伽马射线检测器中，转换器元件可以布置成至少部分地将放大器电路屏蔽掉电磁辐射。
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23.发明申请SENSOR DEVICE, A METHOD AND A SENSOR TO DETERMINE A RELATIVE CONCENTRATION OF A FIRST KIND OF IONS WITH RESPECT TO A SECOND KIND OF IONS SOLUTE IN A DROP OF LIQUID 审中-公开传感器装置，方法和传感器，用于确定第一类离子的相对浓度相对于液体中的第二种类型的溶液公开(公告)号：US20160313283A1
公开(公告)日：2016-10-27
申请号：US15197037
申请日：2016-06-29
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
CPC classification number: G01N27/49 , G01N27/414 , G01N27/4145 , G01N27/48
Abstract: A method to determine a relative concentration of a first kind of ions with respect to a second kind of ions solute in a drop of a liquid comprises providing a voltage to a measurement electrode and a counter electrode, the measurement electrode being provided over a semiconductor substrate comprising a plurality of channels, the channels connecting a cavity and the measurement electrode, wherein the counter electrode is arranged to be in contact with the cavity, when the cavity, the measurement electrode and the counter electrode are arranged to accommodate the drop of a liquid and allow a voltage to be applied to the drop of liquid. The method further comprises determining a current or a change of the current flowing through the drop of liquid in response to the applied voltage; and providing an evaluation signal indicative of the relative concentration based on the determined current or the determined change of current.
Abstract translation: 确定第一种离子相对于液滴中的第二类离子溶质的相对浓度的方法包括向测量电极和对电极提供电压，测量电极设置在半导体衬底上 包括多个通道，所述通道连接空腔和所述测量电极，其中所述对电极被布置为与所述空腔接触，当所述空腔，所述测量电极和所述对电极被布置成容纳所述液体的液滴时 并且允许将电压施加到液滴。 该方法还包括响应于所施加的电压来确定流过液滴的电流的电流或变化; 以及基于所确定的电流或确定的电流变化来提供指示相对浓度的评估信号。
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24.发明授权Electronic component, a semiconductor wafer and a method for producing an electronic component 有权电子部件，半导体晶片和电子部件的制造方法公开(公告)号：US09337311B2
公开(公告)日：2016-05-10
申请号：US14225652
申请日：2014-03-26
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
IPC: H01L21/762 , H01L21/763 , H01L29/66 , H01L29/06 , H01L29/739 , H01L29/78 , H01L23/00 , H01L29/08 , H01L29/417 , H01L29/45
CPC classification number: H01L29/66712 , H01L24/32 , H01L24/33 , H01L29/0657 , H01L29/0873 , H01L29/0878 , H01L29/0886 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7802 , H01L29/7809 , H01L2224/291 , H01L2224/32238 , H01L2924/01079 , H01L2924/13055 , H01L2924/13091 , H01L2924/014
Abstract: An electronic component includes a semiconductor substrate defined by a generally planar first face, a generally planar second face and side faces extending between the generally planar second face and the generally planar first face. The semiconductor substrate has a curved contour between the generally planar second face and the side faces.
Abstract translation: 电子部件包括由大致平面的第一面，大致平坦的第二面和在大致平坦的第二面和大致平面的第一面之间延伸的侧面限定的半导体基板。 半导体衬底在大致平坦的第二面和侧面之间具有弯曲的轮廓。
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25.发明申请PREFORM STRUCTURE FOR SOLDERING A SEMICONDUCTOR CHIP ARRANGEMENT, A METHOD FOR FORMING A PREFORM STRUCTURE FOR A SEMICONDUCTOR CHIP ARRANGEMENT, AND A METHOD FOR SOLDERING A SEMICONDUCTOR CHIP ARRANGEMENT 有权用于焊接半导体芯片布置的预制结构，形成半导体芯片布置的预制结构的方法和用于焊接半导体芯片布置的方法公开(公告)号：US20160071814A1
公开(公告)日：2016-03-10
申请号：US14477962
申请日：2014-09-05
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
CPC classification number: H01L24/29 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/302 , B23K35/32 , B23K35/36 , B23K2101/40 , B23K2103/172 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2224/03462 , H01L2224/04026 , H01L2224/05647 , H01L2224/05747 , H01L2224/05893 , H01L2224/06181 , H01L2224/271 , H01L2224/2711 , H01L2224/2712 , H01L2224/27442 , H01L2224/2746 , H01L2224/276 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29157 , H01L2224/29193 , H01L2224/29247 , H01L2224/29271 , H01L2224/29393 , H01L2224/29447 , H01L2224/29471 , H01L2224/32013 , H01L2224/32014 , H01L2224/32057 , H01L2224/32058 , H01L2224/32245 , H01L2224/831 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83447 , H01L2224/83693 , H01L2224/8382 , H01L2224/83825 , H01L2924/0105 , H01L2924/0132 , H01L2924/014 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/00012
Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.
Abstract translation: 用于焊接半导体芯片布置的预成型件结构包括碳纤维复合片和形成在碳纤维复合片上的焊料层。
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公开(公告)号：US20160061967A1
公开(公告)日：2016-03-03
申请号：US14471075
申请日：2014-08-28
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Johannes Hacker
Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.
Abstract translation: 在各种实施例中，提供了一种伽马射线检测器。 伽马射线检测器可以包括转换器元件，其被配置为当伽马射线至少部分地移动通过转换器元件时释放电子。 伽马射线检测器还可以包括半导体检测器，布置成接收电子并且被配置为当电子至少部分地移动通过半导体检测器时产生信号; 以及放大器电路，耦合到半导体检测器并被配置为放大由半导体检测器产生的信号。 在伽马射线检测器中，转换器元件可以布置成至少部分地将放大器电路屏蔽掉电磁辐射。
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