Method for manufacturing semiconductor device
    29.
    发明申请
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20060189097A1

    公开(公告)日:2006-08-24

    申请号:US11410073

    申请日:2006-04-25

    IPC分类号: H01L21/30

    摘要: The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.

    摘要翻译: 本发明是用于容易地分离大面积的全层释放层的分离方法。 此外,本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。 一种分离方法,包括以下步骤:依次形成含有氢的金属膜,第一氧化物和半导体膜; 以及将载体接合到包含第一氧化物和半导体膜的剥离层,并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。 通过分离方法,进行热处理以扩散半导体膜中所含的氢,通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物 氧化物和第三氧化物,含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。