摘要:
An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second contact area (22), wherein the first contact area (21) is in each case arranged on that side of the radiation-emitting semiconductor components (2) which is remote from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which in each case has a cutout in a region of the first contact area (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4). One of the conductive structures (8) electrically conductively connects at least the first contact area (21) of a radiation-emitting semiconductor component (2) to a further first contact area (21) of a further radiation-emitting semiconductor component (2) or to a conductor track of the carrier substrate (1). Furthermore, a method for producing such a module is specified.
摘要:
An electric functional layer is produced on a surface of a substrate, having at least an electronic component, particularly a semiconductor chip, provided thereof. The electric functional layer is formed using particles in powder of an electrically conductive material. The functional layer is blown on the surface of the substrate to form a thick and strong adhesive layer on impact with the substrate.
摘要:
With respect to an electronic component, in particular a power module, and in a corresponding method for producing or contact-connecting said component, the component (1) is fastened to an electrically insulating carrier film (3) having at least one first inorganic material and at least one opening (5) in which at least one electrical contact-connection (7) of the component (1) to outside the component (1) is provided. This makes it possible to provide electronic components (1), in particular power modules, for a temperature range of >175 DEG C.
摘要:
In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components (2) on a substrate (1), at least one electronic component (2) is applied to a substrate (1), and an isolation layer (3) is applied to the topography which is produced by means of the at least one component (2) on the substrate (1). Contact-making openings (5) are then produced in the isolation layer (3) at contact points (8, 9) for the at least one electronic component, the isolation layer (3) and the contact points (8, 9) in the contact-making openings (5) are planar-metallized, and the metallization is structured in order to produce electrical connections (4), with the isolation layer (3) having a glass coating.
摘要:
One unhoused electronic component, e.g., a semiconductor power component, has at least one connecting surface disposed on a top side and/or on a bottom side for fastening and/or for electric contacting. One side of the component is attached to and/or electrically contacts a direct copper bonding ceramic substrate, at an opposing connecting surface in the region of the connecting surface. An electrically insulating carrier film is created on the substrate on the side facing the component outside the region of the connecting surface and extending beyond the bottom side. An electrically conducting conductor part is attached to and/or electrically contacts the connecting surface on the top side. A pre-formed, three dimensional structure is formed extending beyond the area of the top side, thus creating an electrically insulating mass between the carrier film and the three-dimensional structure of the conductor part.
摘要:
A method for producing a dielectric layer extending between two or more elements of an electronic component includes arranging a free-standing dielectric layer above the elements and a deformable support layer below the elements. The free-standing dielectric layer is laminated onto at least a portion of the first surface of the first element and onto at least a portion of the first surface of the second element such that a portion of the dielectric layer extends between the first surface of the first element and the first surface of the second element.
摘要:
In one embodiment of the present invention, a method is disclosed for contacting at least one electric contact surface on a surface of a substrate and/or a surface of a semiconductor chip arranged on a substrate. According to one embodiment of the invention, a film of electrically insulating plastic material is laminated onto the surfaces. A large-area contacting of the contact surfaces, which are freely accessible via the openings in the film, with a layer of electrically conductive material is then carried out. It is the aim of a planar electric contacting method to produce openings in an insulation during a short period of processing time. In particular, openings are to be positioned at a precise position to the contact surfaces. To achieve this, openings are produced in the film of electrically insulating plastic material in the region of the contact surface to be contacted by means of laser cutting and prior to laminating. This method is suitable for all planar contacting processes. Substrates or semiconductor chips which are contacted accordingly may be produced. The semiconductor chips used can be, in particular, power semiconductor chips.
摘要:
An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.
摘要:
A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.
摘要:
An optoelectronic component includes a protective layer including a material containing hydrophobic groups. Furthermore, a method is described, by means of which an optoelectronic component can be produced, and in which a protective layer including hydrophobic groups is applied.