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21.发明公开公开(公告)号：US20230420617A1
公开(公告)日：2023-12-28
申请号：US18248817
申请日：2021-10-29
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Michael Iza , Matthew S. Wong , Steven P. DenBaars , Shuji Nakamura
IPC: H01L33/42
Abstract: A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga2O3.
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公开(公告)号：US11532922B2
公开(公告)日：2022-12-20
申请号：US16652282
申请日：2018-10-02
Applicant: The Regents of the University of California
Inventor： Charles Forman , SeungGeun Lee , Erin C. Young , Jared Kearns , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC: H01S5/00 , H01S5/183 , H01S5/02 , H01S5/024 , H01S5/30 , H01S5/343 , H01S5/0234 , H01S5/0237 , H01S5/02355 , H01S5/32 , H01S5/10
Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.
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公开(公告)号：US20220239068A1
公开(公告)日：2022-07-28
申请号：US17613659
申请日：2020-05-28
Applicant: The Regents of the University of California
Inventor： Jared Kearns , Daniel A. Cohen , Joonho Back , Nathan Palmquist , Tal Margalith , Steven P. DenBaars , Shuji Nakamura
Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.
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公开(公告)号：US20220181513A1
公开(公告)日：2022-06-09
申请号：US17539345
申请日：2021-12-01
Applicant: The Regents of the University of California
Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , H01L21/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06
Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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公开(公告)号：US10985285B2
公开(公告)日：2021-04-20
申请号：US16325246
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L31/0304 , H01L29/207 , H01L33/32 , H01L33/00 , H01L21/02 , H01L29/36
Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.
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Patent Agency Ranking
公开(公告)号：US20200244036A1
公开(公告)日：2020-07-30
申请号：US16652282
申请日：2018-10-02
Applicant: The Regents of the University of California
Inventor： Charles Forman , SeungGeun Lee , Erin C. Young , Jared Kearns , Steven P. DenBaars , James S. Speck , Shuji Nakamura
Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.
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27.发明申请公开(公告)号：US20200243334A1
公开(公告)日：2020-07-30
申请号：US16752428
申请日：2020-01-24
Applicant: The Regents of the University of California
Inventor： Christian J. Zollner , Michael Iza , James S. Speck , Shuji Nakamura , Steven P. DenBaars
IPC: H01L21/02 , H01L29/201 , H01L29/20
Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.
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公开(公告)号：US10217916B2
公开(公告)日：2019-02-26
申请号：US14461151
申请日：2014-08-15
Applicant: The Regents of the University of California
Inventor： Shuji Nakamura , Steven P. DenBaars , Hirokuni Asamizu
Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
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公开(公告)号：US20180374699A1
公开(公告)日：2018-12-27
申请号：US15773864
申请日：2016-11-01
Applicant: The Regents of the University of California
Inventor： Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L21/02 , H01L29/15 , H01L29/20 , H01L29/207 , H01L29/36 , H01L29/885 , H01L31/18 , H01L31/0352 , H01L31/0304 , H01L33/00 , H01L33/06 , H01L33/32
CPC classification number: H01L21/02584 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/15 , H01L29/2003 , H01L29/207 , H01L29/365 , H01L29/88 , H01L29/885 , H01L31/03044 , H01L31/035236 , H01L31/1856 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/32
Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
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公开(公告)号：US09951912B2
公开(公告)日：2018-04-24
申请号：US14567889
申请日：2014-12-11
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Natalie Fellows DeMille , Hisashi Masui , Steven P. DenBaars , Shuji Nakamura
IPC: H01L29/20 , F21K99/00 , H01L25/075 , H01L33/00 , H01L33/58 , F21V9/08 , F21V9/10 , F21V9/14 , H01L33/32 , H01S5/00 , H01S5/343 , F21K9/65 , H01L33/16 , H01L33/50 , F21Y115/30 , F21Y115/10
CPC classification number: F21K9/65 , F21V9/08 , F21V9/14 , F21V9/40 , F21Y2115/10 , F21Y2115/30 , H01L25/0753 , H01L33/0045 , H01L33/16 , H01L33/32 , H01L33/50 , H01L33/507 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01S5/005 , H01S5/34333 , H01L2924/00
Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.
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