公开(公告)号：US20060138108A1

公开(公告)日：2006-06-29

申请号：US11360120

申请日：2006-02-22

Applicant: Yunlong Sun ,  Edward Swenson ,  Richard Harris

Inventor： Yunlong Sun ,  Edward Swenson ,  Richard Harris

IPC: B23K26/16

CPC classification number: B23K26/04 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/361 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/76894 ,  H01L23/5258 ,  H01L2924/0002 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0085 ,  H01S3/0092 ,  H01S3/1118 ,  H01S3/2383 ,  H01S5/4012 ,  Y10S438/94 ,  H01L2924/00

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

公开(公告)号：US20060131288A1

公开(公告)日：2006-06-22

申请号：US11292327

申请日：2005-11-30

Applicant: Yunlong Sun ,  Edward Swenson ,  Richard Harris

Inventor： Yunlong Sun ,  Edward Swenson ,  Richard Harris

IPC: B23K26/16

CPC classification number: B23K26/04 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/361 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/76894 ,  H01L23/5258 ,  H01L2924/0002 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0085 ,  H01S3/0092 ,  H01S3/1118 ,  H01S3/2383 ,  H01S5/4012 ,  Y10S438/94 ,  H01L2924/00

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

公开(公告)号：US06887804B2

公开(公告)日：2005-05-03

申请号：US10361206

申请日：2003-02-07

Applicant: Yunlong Sun ,  Robert F. Hainsey ,  Lei Sun

Inventor： Yunlong Sun ,  Robert F. Hainsey ,  Lei Sun

IPC: B23K26/04 ,  B23K26/06 ,  H01L23/525 ,  H01L21/82

CPC classification number: H01L23/5258 ,  B23K26/04 ,  B23K26/043 ,  B23K26/0613 ,  B23K26/0622 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S438/94 ,  H01L2924/00

Abstract: A set (50) of one or more laser pulses (52) is employed to remove passivation layer (44) over a conductive link (22). The link (22) can subsequently be removed by a different process such as chemical etching. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.05 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly material removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each target area (51). Conventional wavelengths in the IR range or their harmonics in the green or UV range can be employed.

Abstract translation: 使用一个（50）一个或多个激光脉冲（52）来去除导电连接件（22）上的钝化层（44）。 随后可以通过诸如化学蚀刻的不同过程去除连接件（22）。 组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.05ps至30ns的范围内。 传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。 在IR范围内的常规波长或其在绿色或UV范围内的谐波可以被采用。

公开(公告)号：US20050087522A1

公开(公告)日：2005-04-28

申请号：US10777973

申请日：2004-02-11

Applicant: Yunlong Sun ,  Liu Jinjiao ,  Richard Harris ,  Pradeep Subrahmanyan ,  Robert Hainsey ,  Weixiong Lu

Inventor： Yunlong Sun ,  Liu Jinjiao ,  Richard Harris ,  Pradeep Subrahmanyan ,  Robert Hainsey ,  Weixiong Lu

IPC: B23K26/06 ,  B23K26/38 ,  H05K3/00

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/382 ,  B23K26/389 ,  B23K26/40 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/26 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52 ,  B23K2103/56 ,  H05K3/0038 ,  H05K2203/108 ,  H05K2203/1105

Abstract: A method and laser system effect rapid removal of material from a workpiece by applying heating energy in the form of a light beam to a target location on the workpiece to elevate its temperature while maintaining its dimensional stability. When the target portion of the workpiece is heated, a laser beam is directed for incidence on the heated target location. The laser beam preferably has a processing laser output that is appropriate to effect removal of the target material from the workpiece. The combined incidence of the processing laser output and the heating energy on the target location enables the processing laser output to remove a portion of the target material at a material removal rate that is higher than the material removal rate achievable when the target material is not heated.

Abstract translation: 一种方法和激光系统通过将光束形式的加热能量施加到工件上的目标位置来实现材料从工件的快速移除，以提高其温度同时保持其尺寸稳定性。 当工件的目标部分被加热时，激光束被引导以被加热到目标位置上。 激光束优选地具有适合于从工件去除目标材料的处理激光输出。 处理激光输出和加热能量在目标位置的组合发生率使得处理激光输出能够以高于目标材料不加热时可实现的材料去除速率的材料去除速率去除目标材料的一部分 。

公开(公告)号：US20050042805A1

公开(公告)日：2005-02-24

申请号：US10887662

申请日：2004-07-09

Applicant: Edward Swenson ,  Yunlong Sun ,  Manoj Sammi ,  Jay Johnson ,  Doug Garcia ,  Rupendra Anklekar

Inventor： Edward Swenson ,  Yunlong Sun ,  Manoj Sammi ,  Jay Johnson ,  Doug Garcia ,  Rupendra Anklekar

IPC: B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  B23K26/40 ,  B28D5/00 ,  H01L21/301 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01S20060101

CPC classification number: B23K26/0622 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/52 ,  B28D5/0011 ,  H01L2224/16 ,  H01L2924/0102 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/09701 ,  Y10S438/94

Abstract: A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic or ceramic-like substrate such that a portion of the thickness of the substrate is removed. The UV laser beam forms a scribe line in the substrate without appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

Abstract translation: 形成具有尖锐捕捉线的划线的方法需要沿着陶瓷或陶瓷状衬底引导UV激光束，使得去除衬底厚度的一部分。 UV激光束在衬底中形成划线，而没有明显的衬底熔化，使得明确限定的捕捉线形成延伸到衬底厚度的高应力集中区域。 因此，响应于施加到划线的任一侧的断裂力，多个深度裂纹在高应力集中区域中传播到基板的厚度中，以使基板清洁断裂成单独的电路部件。 该区域的形成促进了基板的高精度断裂，同时在施加破损力的同时保持了每个部件的内部结构的完整性。

公开(公告)号：US5569398A

公开(公告)日：1996-10-29

申请号：US343779

申请日：1994-11-22

Applicant: Yunlong Sun ,  Ed Swenson

Inventor： Yunlong Sun ,  Ed Swenson

IPC: H01L27/04 ,  B23K26/00 ,  B23K26/06 ,  B23K26/36 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01S3/0915 ,  H01S3/13 ,  H01S3/16

CPC classification number: B23K26/06 ,  B23K26/0643 ,  B23K26/351 ,  B23K26/362 ,  B23K26/40 ,  H01L21/76894 ,  B23K2201/34 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/12 ,  B23K2203/14 ,  B23K2203/172 ,  B23K2203/26 ,  B23K2203/50 ,  H01S3/025 ,  H01S3/0401 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/1611 ,  H01S3/1653 ,  Y10S438/94

Abstract: A laser system and processing method exploits the absorption contrast between the materials from which a film and an underlying substrate (26) are made to effectively remove the film from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m optimizes the absorption contrast between many resistive or conductive film materials (e.g., metals, metal alloys, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semi-conductors) and permits the use of laser output in a wider range of energy or power levels and pulse widths, without risking damage to the substrates or adjacent circuit structures. Existing film processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range. The laser system and processing method also exploit a wavelength range in which devices, including any semiconductor material-based devices affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing malfunctions or function shifts in the processed devices, thus allowing faster functional laser processing, easing geometric restrictions on circuit design, and facilitating production of denser and smaller devices.

Abstract translation: 激光系统和处理方法利用材料之间的吸收对比度，其中膜和下面的基底（26）被制成以有效地从基底去除膜。 在1.2至3微米的波长范围内的激光输出优化了许多电阻或导电膜材料（例如金属，金属合金，多晶硅，多硅化物或二硅化物）和集成电路基板（例如硅，砷化镓， 或其他半导体），并且允许在更宽的能量或功率水平和脉冲宽度范围内使用激光输出，而不会损坏基板或相邻电路结构。 现有的胶片处理激光系统可以容易地修改为在1.2到3μm的范围内操作。 激光系统和处理方法还利用了波长范围，其中包括受传统激光波长影响的任何基于半导体材料的器件和具有集成到其电路中的光敏或光电子部分的器件的器件可以被有效地功能地修整而不诱导 处理的设备中的故障或功能偏移，因此允许更快的功能激光处理，减轻对电路设计的几何限制，并促进生产更致密和更小的设备。

公开(公告)号：US5473624A

公开(公告)日：1995-12-05

申请号：US343778

申请日：1994-11-22

Applicant: Yunlong Sun

Inventor： Yunlong Sun

IPC: H01L27/04 ,  B23K26/00 ,  B23K26/06 ,  B23K26/36 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01S3/0915 ,  H01S3/13 ,  H01S3/16 ,  H01S3/09

CPC classification number: B23K26/06 ,  B23K26/0643 ,  B23K26/351 ,  B23K26/362 ,  B23K26/40 ,  H01L21/76894 ,  B23K2201/34 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/12 ,  B23K2203/14 ,  B23K2203/172 ,  B23K2203/26 ,  B23K2203/50 ,  H01S3/025 ,  H01S3/0401 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/1611 ,  H01S3/1653 ,  Y10S438/94

Abstract: A laser system and processing method exploits the absorption contrast between the materials from which a link (12) and an underlying substrate (22) are made to effectively remove the link from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m (30) optimizes the absorption contrast between many materials (e.g., metals, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semiconductors) and permits the use of laser output in a wider range of energy or power levels, pulse widths, and spot sizes without risking damage to the substrates or adjacent circuit structures. Existing link processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range.

Abstract translation: 激光系统和处理方法利用材料之间的吸收对比度，其中链接（12）和下面的基底（22）被制成以有效地从基底去除连接。 波长范围为1.2〜3μm（30）的激光输出优化了许多材料（如金属，多晶硅，多杀菌剂或二硅化物）和集成电路基板（如硅，砷化镓或其他半导体）之间的吸收对比度， 并且允许在更宽的能量或功率水平范围内使用激光输出，脉冲宽度和光点尺寸，而不会对基板或相邻电路结构造成损害。 现有的链接处理激光系统可以容易地修改为在1.2到3μm的范围内操作。

公开(公告)号：US5265114A

公开(公告)日：1993-11-23

申请号：US943875

申请日：1992-09-10

Applicant: Yunlong Sun ,  Craig D. Hutchens

Inventor： Yunlong Sun ,  Craig D. Hutchens

IPC: H01L27/04 ,  B23K26/00 ,  B23K26/06 ,  B23K26/36 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01S3/0915 ,  H01S3/13 ,  H01S3/16 ,  H01S3/09

CPC classification number: B23K26/06 ,  B23K26/0643 ,  B23K26/351 ,  B23K26/362 ,  B23K26/40 ,  H01L21/76894 ,  B23K2201/34 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/12 ,  B23K2203/14 ,  B23K2203/172 ,  B23K2203/26 ,  B23K2203/50 ,  H01S3/025 ,  H01S3/0401 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/1611 ,  H01S3/1653 ,  Y10S438/94

Abstract: A laser system and processing method exploits the absorption contrast between the materials from which a link (12) and an underlying substrate (22) are made to effectively remove the link from the substrate. Laser output in a wavelength range of 1.2 to 2.0 .mu.m (30) optimizes the absorption contrast between many high conductivity materials (e.g., metals) and silicon substrates and permits the use of laser output in a wider range of energy or power levels, pulse widths, without risking damage to the silicon substrates or adjacent circuit structures. Existing link processing laser systems can be readily modified to operate in the 1.2 to 3.0 .mu.m range.

Abstract translation: 激光系统和处理方法利用材料之间的吸收对比度，其中链接（12）和下面的基底（22）被制成以有效地从基底去除连接。 波长范围为1.2至2.0μm（30）的激光输出优化了许多高导电性材料（例如金属）和硅衬底之间的吸收对比度，并允许在更宽的能量或功率水平范围内使用激光输出，脉冲 宽度，而不会损坏硅衬底或相邻电路结构。 现有的链接处理激光系统可以容易地修改为在1.2到3.0μm的范围内操作。

公开(公告)号：US08526473B2

公开(公告)日：2013-09-03

申请号：US12060076

申请日：2008-03-31

Applicant: Brian W. Baird ,  Clint R. Vandergiessen ,  Steve Swaringen ,  Robert Hainsey ,  Yunlong Sun ,  Kelly J. Bruland ,  Andrew Hooper

Inventor： Brian W. Baird ,  Clint R. Vandergiessen ,  Steve Swaringen ,  Robert Hainsey ,  Yunlong Sun ,  Kelly J. Bruland ,  Andrew Hooper

IPC: H01L21/302 ,  H01S3/10 ,  B23K26/38

CPC classification number: H01S3/1305 ,  B23K26/0622 ,  H01S3/0057 ,  H01S3/102

Abstract: Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.

Abstract translation: 使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。 时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。 一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数 基于比较。

公开(公告)号：US20120250707A1

公开(公告)日：2012-10-04

申请号：US13076970

申请日：2011-03-31

Applicant: Fuyuan Lu ,  Feng Chang ,  Haisheng Wu ,  Yunlong Sun

Inventor： Fuyuan Lu ,  Feng Chang ,  Haisheng Wu ,  Yunlong Sun

IPC: H01S3/10

CPC classification number: H01S3/10015 ,  B23K26/0622 ,  B23K26/355 ,  B23K26/389 ,  H01S3/0064 ,  H01S3/0085 ,  H01S3/0092 ,  H01S3/06754 ,  H01S3/1618 ,  H01S3/1673 ,  H01S3/2316 ,  H01S3/2375 ,  H01S5/0428 ,  H01S5/06216 ,  H01S5/0622 ,  H01S5/0654

Abstract: A programmable tailored laser pulse generator including a pulsed seed laser source, a laser amplifier, and an optical power amplifier produces high power tailored laser pulses shaped in response to a programmable analog tailored pulse signal applied to a seed laser (first embodiment) or an external modulator of continuous-wave seed laser output (second embodiment). The programmable analog tailored pulse signal is generated by combining multiple individually programmable analog pulses generated by a multi-channel signal generator. A bias applied to the pulsed seed laser source generates pre-lasing prior to producing a tailored laser pulse so that the seed laser source spectral line and line width stabilize within a narrow gain line width of a solid-state laser amplifier, thereby to impart pulse peak stability of the laser output. The tailored laser pulse generator allows for generating harmonics at shorter wavelengths and provides an economical, reliable laser source for a variety of micromachining applications.

Abstract translation: 包括脉冲种子激光源，激光放大器和光功率放大器的可编程定制的激光脉冲发生器产生响应于施加到种子激光器的可编程模拟定制脉冲信号（第一实施例）或外部 连续波种子激光输出调制器（第二实施例）。 可编程模拟定制的脉冲信号通过组合由多通道信号发生器产生的多个单独可编程的模拟脉冲来产生。 施加到脉冲种子激光源的偏压在产生定制的激光脉冲之前产生预激光，使得种子激光源光谱线和线宽度稳定在固态激光放大器的窄增益线宽内，从而赋予脉冲 激光输出的峰值稳定性。 定制的激光脉冲发生器允许在较短波长处产生谐波，并为各种微加工应用提供经济可靠的激光源。