公开(公告)号：US20130092322A1

公开(公告)日：2013-04-18

申请号：US13691125

申请日：2012-11-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenetsu MIZUSAWA ,  Keiki Ito ,  Masahide Itoh

IPC: F17D1/04

CPC classification number: F17D1/04 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/52 ,  G05D11/132 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069 ,  H01L21/67253 ,  Y10T137/0329 ,  Y10T137/0335 ,  Y10T137/0352 ,  Y10T137/2496 ,  Y10T137/87346

Abstract: A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.

Abstract translation: 用于将气体供给到其中处理基板的处理室中的气体供给单元包括多个气体供给源，用于混合从气体供给源供给的多个气体以形成气体混合物的混合管线， 用于将要供应到处理室中的多个位置的气体混合物进行分支的分支管线的多个，以及用于向在至少一条分支管线中流动的气体混合物供应特定附加气体的附加气体供应单元。 气体供应单元还包括用于分别调节分支管线中的气体流量的压力计和阀，以及压力比控制器，用于通过调节阀的开度来控制分支成分支管路的气体混合物以具有规定的压力比 基于通过使用压力计获得的测量结果。

公开(公告)号：US20130092084A1

公开(公告)日：2013-04-18

申请号：US13271449

申请日：2011-10-12

Applicant: ShouQian Shao ,  Jay DeDontney ,  Jason Wright

Inventor： ShouQian Shao ,  Jay DeDontney ,  Jason Wright

IPC: G01N7/00 ,  C23C16/52 ,  B23P11/00 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45512 ,  C23C16/45557 ,  G01N7/00 ,  Y10T137/0402

Abstract: Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of a total mass flow and a corresponding change in a chamber pressure accepting the mixture flow, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to a vacuum processing chamber, enabling precision semiconductor processing.

Abstract translation: 基于总质量流量的测量和接受混合物流动的室压力的相应变化来确定臭氧和氧气的混合物中的臭氧浓度的系统和方法可以使得能够在低压设置下测量臭氧浓度。 可以将臭氧浓度测定应用于真空处理室，从而实现精密的半导体处理。

公开(公告)号：US20130059451A1

公开(公告)日：2013-03-07

申请号：US13666272

申请日：2012-11-01

Applicant: Hitachi Kokusai Electric, Inc.

Inventor： Naonori AKAE ,  Yoshiro HIROSE ,  Yushin TAKASAWA ,  Yosuke OTA

IPC: H01L21/316

CPC classification number: H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

Abstract: A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate an atomic oxygen, and oxidizing the element-containing layer by the atomic oxygen.

Abstract translation: 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内部压力低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含有气体以产生原子氧，并且通过原子氧氧化含元素层。

公开(公告)号：US20120273052A1

公开(公告)日：2012-11-01

申请号：US13097831

申请日：2011-04-29

Applicant: ZHIYUAN YE ,  YIHWAN KIM

Inventor： ZHIYUAN YE ,  YIHWAN KIM

IPC: F16K25/00

CPC classification number: C23C16/4481 ,  C23C16/45512 ,  C23C16/45557 ,  C23C16/45561 ,  Y10T137/0318 ,  Y10T137/0329 ,  Y10T137/0335 ,  Y10T137/877 ,  Y10T436/12

Abstract: Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

公开(公告)号：US20120272900A1

公开(公告)日：2012-11-01

申请号：US13439178

申请日：2012-04-04

Applicant: Young-Seok CHOI ,  Dae-Youn KIM ,  Seung Woo CHOI ,  Yong Min YOO ,  Jung Soo KIM

Inventor： Young-Seok CHOI ,  Dae-Youn KIM ,  Seung Woo CHOI ,  Yong Min YOO ,  Jung Soo KIM

IPC: C23C16/455

CPC classification number: C23C16/45591 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45587

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract translation: 根据本发明的示例性实施例的侧流原子层沉积装置消除了常规横流原子层沉积装置中的气流控制板，并控制反应器盖中的气体输入部分和气体输出部分的形状，以使 通向基板中心的气体流动通道，该气体流动通道短于通向基板边缘的气体流动路径，从而增加每单位面积流到基板中心的气体量。 因此，侧流反应器中的基板中心的膜厚度增加。

公开(公告)号：US08293328B2

公开(公告)日：2012-10-23

申请号：US11470915

申请日：2006-09-07

Applicant: Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

Inventor： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

IPC: C23C16/00

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

Abstract: A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Abstract translation: 提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。 一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。 难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

公开(公告)号：US08268410B2

公开(公告)日：2012-09-18

申请号：US11937279

申请日：2007-11-08

Applicant: Christoph Moelle ,  Lars Bewig ,  Thomas Kuepper

Inventor： Christoph Moelle ,  Lars Bewig ,  Thomas Kuepper

IPC: H05H1/24

CPC classification number: C23C16/515 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45591

Abstract: In the case of CVD methods, comprising PECVD and PICVD methods, the aim of the invention is to improve the impurity-free and, as far as possible, temporally and quantitatively precise feeding of process gases for the targeted layer systems. To this end, the invention provides a coating system and a method for coating articles with alternating layers, in the case of which process gases are introduced in an alternating fashion into a gas mixing point and mixed with a further gas and led to the reaction chamber, in which the deposition is carried out by producing a plasma.

Abstract translation: 在包括PECVD和PICVD方法的CVD方法的情况下，本发明的目的是改进目标层系统的无杂质，并且尽可能地临时和定量地精确地供给工艺气体。 为此，本发明提供一种涂覆系统和用交替层涂覆制品的方法，在这种情况下，工艺气体以交替的方式引入气体混合点并与另外的气体混合并被引导到反应室 ，其中通过产生等离子体进行沉积。

公开(公告)号：US20120219711A1

公开(公告)日：2012-08-30

申请号：US13394013

申请日：2010-08-19

Applicant: Till Merkel ,  Christian Lehnert

Inventor： Till Merkel ,  Christian Lehnert

IPC: C23C16/448

CPC classification number: C23C16/402 ,  C23C16/4488 ,  C23C16/45512

Abstract: A process for the application of layers composed of ceramic or organoceramic materials on surfaces of metals, semimetals or compounds thereof and also components or assemblies made of these materials by a chemical deposition process from the gas phase at atmospheric pressure or 30% below this and process temperatures during deposition below 500° C. The deposition process is carried out in one operation, wherein the reactive chemical substances and the precursors are homogeneously backmixed in the common gas space, and the average residence time as a ratio of volume of the gas space to gas throughput is matched to the rate-determining step of the catalyzed gas-phase reaction of the coating process so as to achieve a deposition rate of from 10 to 2000 nm per hour.

Abstract translation: 在由金属，半金属或其化合物的表面上施加由陶瓷或有机陶瓷材料组成的层的方法以及由这些材料制成的组件或组件的方法，其通过化学沉积工艺从大气压下的气相或低于该温度的30％ 沉积过程中的温度低于500℃。沉积过程在一个操作中进行，其中反应性化学物质和前体在公共气体空间中均匀地回混，平均停留时间作为气体空间的体积比与 气体通过量与涂覆工艺的催化气相反应的速率确定步骤相匹配，以达到每小时10-2000nm的沉积速率。

公开(公告)号：US20110236594A1

公开(公告)日：2011-09-29

申请号：US12970846

申请日：2010-12-16

Applicant: Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

Inventor： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC: C23C16/56 ,  H05H1/24 ,  C23C16/04 ,  B05D3/06

CPC classification number: C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract translation: 描述了用于在原位（即，没有真空断裂或空气曝光）在工艺工具中沉积薄膜叠层的方法和硬件。 在一个实例中，描述了一种在基板上使用等离子体在处理站中原位沉积包括不同组成的膜的膜堆叠的方法，所述方法包括在第一等离子体激活膜沉积阶段中沉积 在所述基板上具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US08026157B2

公开(公告)日：2011-09-27

申请号：US12553007

申请日：2009-09-02

Applicant: Xiesen Yang ,  Yong-Kee Chae ,  Shuran Sheng ,  Liwei Li

Inventor： Xiesen Yang ,  Yong-Kee Chae ,  Shuran Sheng ,  Liwei Li

IPC: H01L21/205 ,  H05H1/24

CPC classification number: H01L21/0262 ,  C23C16/24 ,  C23C16/452 ,  C23C16/45512 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02532 ,  H01L21/02595

Abstract: Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.

Abstract translation: 本发明的实施方案一般涉及在沉积室中的衬底上形成微晶硅层的方法。 在一个实施例中，该方法包括使处理气体流动到沉积室的背板和喷头之间的扩散器区域中，使处理气体流过喷头中的多个孔并进入喷淋头和喷头之间的处理容积 在沉积室中的基板支撑件，点燃处理体积中的等离子体，在等离子体中形成的回流气体离子通过喷头中的多个孔并进入扩散器区域，将气体离子和处理气体混合在扩散器区域 使气体离子和处理气体再次流过喷头中的多个孔并进入处理体积，并在基底上沉积微晶硅层。