公开(公告)号：US20230260785A1

公开(公告)日：2023-08-17

申请号：US18137572

申请日：2023-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA

IPC: H01L21/02 ,  C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  C30B23/08 ,  C30B29/22 ,  H01J37/34 ,  C30B1/04 ,  C30B28/02 ,  C30B29/68 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02631 ,  C23C14/08 ,  C01G15/006 ,  B82Y30/00 ,  C23C14/086 ,  C23C14/3414 ,  C30B23/08 ,  C30B29/22 ,  H01J37/3429 ,  C30B1/04 ,  C30B28/02 ,  C30B29/68 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US20170178904A1

公开(公告)日：2017-06-22

申请号：US15451715

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA

IPC: H01L21/02 ,  C23C14/08 ,  C30B1/04 ,  C30B28/02 ,  C30B29/22 ,  H01L29/04 ,  H01J37/34 ,  C30B29/68 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  C23C14/34 ,  C30B23/08

CPC classification number: H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US20160322198A1

公开(公告)日：2016-11-03

申请号：US14701320

申请日：2015-04-30

Applicant: Infineon Technologies AG

Inventor： Ewald Wiltsche ,  Peter Zupan ,  Werner Schustereder ,  Moriz Jelinek ,  Robert Eberwein ,  Friedrich Kroener

IPC: H01J37/317 ,  H01L21/67 ,  C23C14/16 ,  C23C14/34 ,  H01J37/08 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/0822

Abstract: An ion source for an implanter includes a first solid state source electrode disposed in an ion source chamber. The first solid state source electrode includes a source material coupled to a first negative potential node. A second solid state source electrode is disposed in the ion source chamber. The second solid state source electrode includes the source material coupled to a second negative potential node, and the first solid state source electrode and the second solid state source electrode are configured to produce ions to be implanted by the implanter.

Abstract translation: 用于注入机的离子源包括设置在离子源室中的第一固态源电极。 第一固态源极包括耦合到第一负电位节点的源极材料。 第二固态源电极设置在离子源室中。 第二固体源电极包括耦合到第二负电位节点的源极材料，并且第一固态源极电极和第二固态源极电极被配置为产生待被注入器植入的离子。

公开(公告)号：US09318307B2

公开(公告)日：2016-04-19

申请号：US14305267

申请日：2014-06-16

Applicant: NGK INSULATORS, LTD.

Inventor： Jun Yoshikawa ,  Katsuhiro Imai ,  Koichi Kondo

IPC: H01J37/00 ,  H01J37/34 ,  C04B35/453 ,  C23C14/08 ,  C23C14/34 ,  B32B18/00 ,  C04B35/626 ,  C04B35/634 ,  C04B35/638 ,  C04B37/02 ,  C01G9/02 ,  C04B35/64 ,  C04B111/00

CPC classification number: H01J37/3426 ,  B32B18/00 ,  C01G9/02 ,  C04B35/453 ,  C04B35/6261 ,  C04B35/634 ,  C04B35/638 ,  C04B35/64 ,  C04B37/026 ,  C04B2111/0037 ,  C04B2235/5292 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/6025 ,  C04B2235/786 ,  C04B2235/787 ,  C04B2235/788 ,  C04B2235/9607 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/407 ,  C23C14/086 ,  C23C14/3414 ,  H01J2237/081

Abstract: Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.

Abstract translation: 提供一种氧化锌溅射靶，其可以有效地抑制溅射期间目标物的断裂或裂纹的发生，从而能够以高生产率制造氧化锌透明导电膜。 氧化锌溅射靶由包含氧化锌晶粒的氧化锌烧结体构成，其中，氧化锌溅射靶具有（100）晶体取向度为50％以上的溅射面。

公开(公告)号：US09293306B2

公开(公告)日：2016-03-22

申请号：US14793931

申请日：2015-07-08

Applicant: Scott Jeffrey Volchko ,  William Loewenthal ,  Stefan Zimmermann ,  Mark Gaydos ,  Steven Alfred Miller

Inventor： Scott Jeffrey Volchko ,  William Loewenthal ,  Stefan Zimmermann ,  Mark Gaydos ,  Steven Alfred Miller

IPC: B05D1/02 ,  H01J37/34 ,  C23C14/34 ,  B23K31/02 ,  C23C24/04

CPC classification number: H01J37/3429 ,  B05D1/02 ,  B23K31/02 ,  C23C14/3407 ,  C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332 ,  Y10T156/10

Abstract: In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.

公开(公告)号：US09136086B2

公开(公告)日：2015-09-15

申请号：US13132762

申请日：2009-12-08

Applicant: John E. Madocks

Inventor： John E. Madocks

IPC: C23C14/00 ,  H01J37/08 ,  H01J27/14 ,  H01J37/305 ,  H01J37/317 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/08 ,  H01J27/143 ,  H01J37/3053 ,  H01J37/317 ,  H01J37/32862 ,  H01J37/3405 ,  H01J2237/081

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract translation: 提供了一种用于修改衬底表面的方法，其包括向闭合漂移离子源的电隔离的阳极提供电子。 阳极电极具有正极的阳极电极偏压，而闭合漂移离子源的其它部件电接地或支持电浮动电压。 电子遇到诱发离子形成的闭合漂移磁场。 通过在存在气体的情况下将电极充电偏压切换为负来防止阳极污染，在阳极电极附近产生等离子体以清除来自阳极电极的沉积的污染物。 然后在存在重复电子源的情况下将电极充电偏压返回到正值，以引起重复的离子形成，以再次改变衬底的表面。 提供了一种通过该方法修改基板的表面的装置。

公开(公告)号：US09120183B2

公开(公告)日：2015-09-01

申请号：US13628088

申请日：2012-09-27

Applicant: H.C. Starck, Inc.

Inventor： William Loewenthal ,  Steven Alfred Miller

IPC: C23C14/34 ,  B23K31/02 ,  B05D1/02 ,  C23C24/04

CPC classification number: H01J37/3429 ,  B05D1/02 ,  B23K31/02 ,  C23C14/3407 ,  C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332 ,  Y10T156/10

Abstract: In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.

Abstract translation: 在各种实施例中，至少部分地通过溅射材料的喷涂和/或焊接形成连接的溅射靶。

公开(公告)号：US08217366B2

公开(公告)日：2012-07-10

申请号：US12846525

申请日：2010-07-29

Applicant: Moon-Youn Jung ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

Inventor： Moon-Youn Jung ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

IPC: H01J27/02 ,  H01J49/10 ,  A61N5/00

CPC classification number: H01J27/26 ,  A61N2005/1087 ,  G21K5/04 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  Y10S977/949

Abstract: Provided are a carbon ion generating device and a tumor treatment apparatus using the same. The carbon ion generating device includes a carbon nanostructure, a carbon emitting structure, an ionizing structure, and an accelerator. The carbon emitting structure is configured to induce an emission of carbon atoms from one end of the carbon nanostructure. The ionizing structure is configured to ionize the emitted carbon atoms. The accelerator is configured to accelerate the ionized carbon atoms.

Abstract translation: 提供一种碳离子发生装置和使用其的肿瘤治疗装置。 碳离子产生装置包括碳纳米结构，碳排放结构，电离结构和促进剂。 碳排放结构被配置为从碳纳米结构的一端诱导碳原子的发射。 电离结构被配置成电离发射的碳原子。 加速器被配置为加速电离的碳原子。

公开(公告)号：US20110101237A1

公开(公告)日：2011-05-05

申请号：US12846525

申请日：2010-07-29

Applicant: Moon-Youn JUNG ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

Inventor： Moon-Youn JUNG ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

IPC: H01J27/02 ,  A61N5/00

CPC classification number: H01J27/26 ,  A61N2005/1087 ,  G21K5/04 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  Y10S977/949

Abstract: Provided are a carbon ion generating device and a tumor treatment apparatus using the same. The carbon ion generating device includes a carbon nanostructure, a carbon emitting structure, an ionizing structure, and an accelerator. The carbon emitting structure is configured to induce an emission of carbon atoms from one end of the carbon nanostructure. The ionizing structure is configured to ionize the emitted carbon atoms. The accelerator is configured to accelerate the ionized carbon atoms.

Abstract translation: 提供一种碳离子发生装置和使用其的肿瘤治疗装置。 碳离子产生装置包括碳纳米结构，碳排放结构，电离结构和促进剂。 碳排放结构被配置为从碳纳米结构的一端诱导碳原子的发射。 电离结构被配置成电离发射的碳原子。 加速器被配置为加速电离的碳原子。

公开(公告)号：US5780862A

公开(公告)日：1998-07-14

申请号：US797954

申请日：1997-02-12

Applicant: Harold E. Siess

Inventor： Harold E. Siess

IPC: F03H1/00 ,  H01J27/22 ,  H01J27/00

CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/0815

Abstract: A surface ion source apparatus (10) creates a high purity ion beam (44) of molecules of metal compounds having a lower ionization energy than the metal they contain. Low energy dispersion in the ion beam and currents on the order of one ampere are attainable over long duration operation. Rhenium screen (12) is used in the ion source and related catalyzer (31). Temperatures vary in the range of 700 to 2500 degrees centigrade and a preferred vacuum pressure of 10.sup.-5 torr, or lower, is used. Wear and corrosion resistance of a wide variety of materials is greatly enhanced through ion deposition and/or implantation with the disclosed apparatus and methods. This high output ion source is also useful for electronic propulsion, separation of isotopes and production of electricity by forcing ions through a transverse magnetic field, such as used with a magnetohydrodynamic generator.

Abstract translation: 表面离子源装置（10）产生具有比它们所含的金属低的电离能的金属化合物分子的高纯度离子束（44）。 离子束中的低能量色散和一安培数量级的电流可以在长时间运行下达到。 铼筛（12）用于离子源和相关催化剂（31）。 温度在700至2500摄氏度的范围内变化，优选的真空压力为10 -5乇或更低。 通过使用所公开的装置和方法的离子沉积和/或注入，大大增强了各种材料的耐磨性和耐腐蚀性。 这种高输出离子源也可用于电子推进，同位素分离和通过强迫离子通过横向磁场的产生，例如与磁流体动力发电机一起使用。