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    Waveguide optically pre-amplified detector with passband wavelength filtering
    22.
    发明授权
    Waveguide optically pre-amplified detector with passband wavelength filtering 有权
    波导光学预扩增检测器，带通滤波器

    公开(公告)号：US08098969B2

    公开(公告)日：2012-01-17

    申请号：US12632933

    申请日：2009-12-08

    Applicant: Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

    Inventor： Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

    IPC: G02B6/12

    CPC classification number: H01S5/5018 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12195 ,  H01S5/0262 ,  H01S5/1014

    Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.

    Abstract translation: 本发明描述了一种集成光子学布置，其可以在由III-V半导体组成并在一个外延生长运行中生长的多导向垂直积分（MGVI）结构中实现，允许将半导体光放大器（SOA）和PIN光电检测器 PIN）结构，其构成了形成MGVI结构的多个垂直集成的波长指定波导的公共波长指定波导。 集成包括集成在SOA和PIN之间的波长滤波器，以减少由SOA产生的ASE产生的PIN内的噪声。 在本发明的示例性实施例中，波长滤波器在公共波长指定波导内或波长指定波导内集成到MGVI结构中。 此外，在其它实施例中，波长滤波器由抵靠集成光子学装置的小平面的薄膜滤光器提供，其中光信号通过光波导耦合，和/或诸如多模干涉装置的附加光学元件耦合。

    Waveguide Optically Pre-Amplified Detector with Passband Wavelength Filtering
    24.
    发明申请
    Waveguide Optically Pre-Amplified Detector with Passband Wavelength Filtering 有权
    具有通带波长滤波的波导光学预放大检测器

    公开(公告)号：US20110135314A1

    公开(公告)日：2011-06-09

    申请号：US12632933

    申请日：2009-12-08

    Applicant: Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

    Inventor： Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

    IPC: H04B10/12

    CPC classification number: H01S5/5018 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12195 ,  H01S5/0262 ,  H01S5/1014

    Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.

    Abstract translation: 本发明描述了一种集成光子学布置，其可以在由III-V半导体组成并在一个外延生长运行中生长的多导向垂直积分（MGVI）结构中实现，允许将半导体光放大器（SOA）和PIN光电检测器 PIN）结构，其构成了形成MGVI结构的多个垂直集成的波长指定波导的公共波长指定波导。 集成包括集成在SOA和PIN之间的波长滤波器，以减少由SOA产生的ASE产生的PIN内的噪声。 在本发明的示例性实施例中，波长滤波器在公共波长指定波导内或波长指定波导内集成到MGVI结构中。 此外，在其它实施例中，波长滤波器由抵靠集成光子学装置的小平面的薄膜滤光器提供，其中光信号通过光波导耦合，和/或诸如多模干涉装置的附加光学元件耦合。

    Resonant Cavity Complementary Optoelectronic Transistors
    26.
    发明申请
    Resonant Cavity Complementary Optoelectronic Transistors 有权
    谐振腔互补光电晶体管

    公开(公告)号：US20100296540A1

    公开(公告)日：2010-11-25

    申请号：US12470566

    申请日：2009-05-22

    Applicant: James Pan

    Inventor： James Pan

    IPC: H01S5/00 ,  H01L33/00

    CPC classification number: H01S5/0261 ,  H01L27/15 ,  H01S5/0262

    Abstract: The CMOS field effect transistors, used in microprocessors and other digital VLSI circuits, face major challenges such as thin gate dielectrics leakage and scaling limits, severe short channel effects, limited performance improvement with scaling, complicated fabrication process with added special techniques, and surface mobility degradation. This disclosure proposes a new CMOS-compatible optoelectronic transistor. The current is much higher than the MOS transistors, due to the high carrier mobility with bulk transportation. The optoelectronic transistors are scalable to the sub-nanometer ranges without short channel effects. It is also suitable for low power applications and ULSI circuits. The new transistor consists of a laser or LED diode as drain or source, and a photo sensor diode (avalanche photo diode) as source or drain. The transistor is turned on by applying a gate voltage, similar to the CMOS transistors, and a laser or LED light signal is sent to the nearby photo diode, causing an avalanche breakdown and high drain current. The transistor is surrounded by dielectrics and metal isolations, which serve as a metal box or cavity, so the generated laser or LED lights are confined and reflected back from the metal. The drain current increases exponentially with the drain or gate voltage. This exponential drain current vs. drain or gate voltage characteristics makes the optoelectronic transistor run much faster than the transitional linear MOSFET.The optic transistor current-voltage characteristics are totally different from transitional CMOS transistors.

    Abstract translation: 在微处理器和其他数字VLSI电路中使用的CMOS场效应晶体管面临诸如薄栅极电介质泄漏和结垢限制，严重的短沟道效应，缩放的有限性能改进，附加特殊技术的复杂制造工艺和表面迁移率等主要挑战 降解。 本公开提出了一种新的兼容CMOS的光电晶体管。 电流远高于MOS晶体管，这是由于大容量运输的高载流子迁移率。 光电子晶体管可以扩展到亚纳米范围，而没有短信道效应。 它也适用于低功率应用和ULSI电路。 新的晶体管由激光器或LED二极管作为漏极或源极，以及作为源极或漏极的光电二极管（雪崩光电二极管）组成。 通过施加类似于CMOS晶体管的栅极电压来接通晶体管，并且将激光或LED光信号发送到附近的光电二极管，导致雪崩击穿和高漏极电流。 晶体管被电介质和金属隔离物所围绕，它们用作金属盒或空腔，因此产生的激光或LED灯被限制并从金属反射回来。 漏极电流随漏极或栅极电压呈指数增长。 该指数漏极电流与漏极或栅极电压特性使得光电晶体管的运行比过渡线性MOSFET快得多。 光晶体管电流 - 电压特性与过渡CMOS晶体管完全不同。

    Optical phase conjugation laser diode
    27.
    发明授权
    Optical phase conjugation laser diode 失效
    光学相位共轭激光二极管

    公开(公告)号：US07738522B2

    公开(公告)日：2010-06-15

    申请号：US12009755

    申请日：2008-01-22

    Applicant: Joseph Reid Henrichs

    Inventor： Joseph Reid Henrichs

    IPC: H01S5/00

    CPC classification number: H01S5/18391 ,  B82Y20/00 ,  H01S3/10076 ,  H01S5/0207 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/145 ,  H01S5/18308 ,  H01S5/18319 ,  H01S5/18358 ,  H01S5/18388 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34306 ,  H01S2301/18

    Abstract: A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stabilized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.

    Abstract translation: 一种相位共轭谐振器，其包括半导体激光二极管装置，该半导体激光二极管装置包括后向反射六边形六面体形立方体棱镜的相位共轭阵列，电和/或光泵浦增益区域，分布式布拉格反射镜叠层 ，提供半球形激光发射输出金属化反射镜的高斯模式。 其中，光学相位共轭用于中和自发发射，声学声子，量子噪声，增益饱和度，衍射和其他腔内像差和失真的相位扰动贡献，其通常使得经受放大振荡的受激发射失稳 本发明相位共轭谐振器。 导致稳定的大功率激光发射输出成单个低阶基本横腔模式和反向腔内啁啾，提供高速内部调制，能够以大约20吉比特/秒传输数据。

    METHOD OF FABRICATING AN OPTICAL ANALYSIS DEVICE COMPRISING A QUANTUM CASCADE LASER AND A QUANTUM DETECTOR
    28.
    发明申请
    METHOD OF FABRICATING AN OPTICAL ANALYSIS DEVICE COMPRISING A QUANTUM CASCADE LASER AND A QUANTUM DETECTOR 审中-公开
    制造包含量子激光和量子检测器的光学分析装置的方法

    公开(公告)号：US20100029026A1

    公开(公告)日：2010-02-04

    申请号：US12533429

    申请日：2009-07-31

    Applicant: Vincent Berger ,  Mathieu Carras

    Inventor： Vincent Berger ,  Mathieu Carras

    IPC: H01L21/00

    CPC classification number: H01L31/173 ,  B82Y20/00 ,  G01S7/4811 ,  H01L31/035236 ,  H01S5/0262 ,  H01S5/3402

    Abstract: The invention relates to a method of fabricating an optical device for analysing a scene, comprising an emitter and a detector in the mid-infrared or far-infrared, characterized in that it comprises: the production of a stack of semiconductor layers grown epitaxially on the surface of a semiconductor substrate, certain layers of which are doped; the production of a first, quantum cascade laser emission device (L) emitting an analysis beam in the mid-infrared or far-infrared, from a first level called the emission level, into the stack of semiconductor layers; and the production of a second, quantum detector device (D) capable of detecting a beam backscattered by the scene to be analysed, at the same level in the stack as the emission level.

    Abstract translation: 本发明涉及一种制造用于分析场景的光学装置的方法，其包括在中红外或远红外线中的发射器和检测器，其特征在于，其包括：生成外延生长的半导体层堆叠 半导体衬底的表面，其某些层被掺杂; 制造从称为发射电平的第一级发射中红外或远红外线的分析光束的第一量子级联激光发射装置（L）进入半导体层堆叠; 以及产生能够检测由待分析场景反向散射的光束的第二量子检测器装置（D），其在堆叠中与发射水平相同的水平。

    Optical phase conjugation laser diode
    29.
    发明申请
    Optical phase conjugation laser diode 失效
    光学相位共轭激光二极管

    公开(公告)号：US20080205461A1

    公开(公告)日：2008-08-28

    申请号：US12009755

    申请日：2008-01-22

    Applicant: Joseph Henrichs

    Inventor： Joseph Henrichs

    IPC: H01S3/08

    CPC classification number: H01S5/18391 ,  B82Y20/00 ,  H01S3/10076 ,  H01S5/0207 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/145 ,  H01S5/18308 ,  H01S5/18319 ,  H01S5/18358 ,  H01S5/18388 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34306 ,  H01S2301/18

    Abstract: A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.

    Abstract translation: 一种相位共轭谐振器，其包括半导体激光二极管装置，该半导体激光二极管装置包括后向反射六边形六面体形立方体棱镜的相位共轭阵列，电和/或光泵浦增益区域，分布式布拉格反射镜叠层 ，提供半球形激光发射输出金属化反射镜的高斯模式。 其中，光学相位共轭用于中和自发发射，声学声子，量子噪声，增益饱和度，衍射和其他腔内像差和失真的相位扰动贡献，其通常使得经受放大振荡的受激发射失稳 本发明相位共轭谐振器。 导致稳定的大功率激光发射输出成单个低阶基本横腔模式和反向腔内啁啾，提供高速内部调制，能够以大约20吉比特/秒传输数据。

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