公开(公告)号：US07932614B2

公开(公告)日：2011-04-26

申请号：US12909494

申请日：2010-10-21

Applicant: Steven R. Codding ,  Timothy C. Krywanczyk ,  Timothy E. Neary ,  Edmund J. Sprogis

Inventor： Steven R. Codding ,  Timothy C. Krywanczyk ,  Timothy E. Neary ,  Edmund J. Sprogis

IPC: H01L23/48

CPC classification number: H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/09701 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

公开(公告)号：US20110031620A1

公开(公告)日：2011-02-10

申请号：US12909494

申请日：2010-10-21

Applicant: Steven R. Codding ,  Timothy C. Krywanczyk ,  Timothy E. Neary ,  Edmund J. Sprogis

Inventor： Steven R. Codding ,  Timothy C. Krywanczyk ,  Timothy E. Neary ,  Edmund J. Sprogis

IPC: H01L23/488 ,  H01L23/498

CPC classification number: H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/09701 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

Abstract translation: 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。

公开(公告)号：US07855442B2

公开(公告)日：2010-12-21

申请号：US11650883

申请日：2007-01-08

Applicant: John H. Magerlein ,  Chirag S. Patel ,  Edmund J. Sprogis ,  Herbert I. Stoller

Inventor： John H. Magerlein ,  Chirag S. Patel ,  Edmund J. Sprogis ,  Herbert I. Stoller

IPC: H01L23/02

CPC classification number: H01L21/486 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/147 ,  H01L24/16 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/05571 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2924/00012

Abstract: A Silicon Based Package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including metal capture structures in contact with the first surface and multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the reverse side of the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Form via holes with tapered or vertical sidewalls, which extend through the UTSW to reach the metal capture structures. Then form metal pads in the via holes which extend through the UTSW, making electrical contact to the metal capture structures. Then bond the metal pads in the via holes to pads of a carrier.

Abstract translation: 基于硅的封装（SBP）由从作为SBP的基底的厚晶片开始形成，该基板由具有平坦的第一表面和反面的硅组成。 然后形成包括与第一表面接触的金属捕获结构和在第一表面上的多层导体图案的互连结构。 在SBP和晶片保持器之间形成临时结合，晶片保持器是刚性结构。 将晶圆的反面变薄到所需的厚度，以形成用于SBP的超薄硅晶片（UTSW）。 通过具有锥形或垂直侧壁的孔形成，其延伸穿过UTSW以到达金属捕获结构。 然后在穿过UTSW的通孔中形成金属焊盘，使其与金属捕获结构电接触。 然后将通孔中的金属焊盘接合到载体的焊盘。

公开(公告)号：US07820521B2

公开(公告)日：2010-10-26

申请号：US12335605

申请日：2008-12-16

Applicant: Paul S. Andry ,  Chirag S. Patel ,  Edmund J. Sprogis ,  Cornelia K. Tsang

Inventor： Paul S. Andry ,  Chirag S. Patel ,  Edmund J. Sprogis ,  Cornelia K. Tsang

IPC: H01L21/76

CPC classification number: H01L23/49833 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10T29/49165 ,  H01L2924/014 ,  H01L2224/05552

Abstract: Conductive through vias are formed in electronic devices and electronic device carrier, such as, a silicon chip carrier. An annulus cavity is etched into the silicon carrier from the top side of the carrier and the cavity is filled with insulating material to form an isolation collar around a silicon core region. An insulating layer with at least one wiring level, having a portion in contact with the silicon core region, is formed on the top side of the carrier. Silicon is removed from the back side of the carrier sufficient to expose the distal portion of the isolation collar. The core region is etched out to expose the portion of the wiring level in contact with the silicon core region to form an empty via. The via is filled with conductive material in contact with the exposed portion of the wiring level to form a conductive through via to the wiring level. A solder bump formed, for example, from low melt C4 solder, is formed on the conductive via exposed on the carrier back side. The process acts to make the conductive via fill step independent of the via isolation step.

Abstract translation: 导电通孔形成在电子器件和电子器件载体中，例如硅芯片载体。 环状空腔从载体的顶侧蚀刻到硅载体中，并且空腔填充绝缘材料以在硅芯区域周围形成隔离环。 在载体的顶侧上形成具有至少一个布线层的绝缘层，其具有与硅芯区域接触的部分。 将硅从载体的背面移除，足以露出隔离套环的远端部分。 蚀刻芯区域以暴露与硅芯区域接触的布线层的部分以形成空通孔。 通孔填充有与布线层的暴露部分接触的导电材料，以形成导电通孔到布线层。 在载体背侧露出的导电通孔上形成例如由低熔点C4焊料形成的焊料凸块。 该过程用于使导电通孔填充步骤独立于通孔隔离步骤。

公开(公告)号：US20100261335A1

公开(公告)日：2010-10-14

申请号：US12423254

申请日：2009-04-14

Applicant: Paul S. Andry ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Edmund J. Sprogis ,  Cornelia K. Tsang

Inventor： Paul S. Andry ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Edmund J. Sprogis ,  Cornelia K. Tsang

IPC: H01L21/78

CPC classification number: H01L21/78

Abstract: A method includes receiving at least one wafer having a front side and a backside, where the front side has a plurality of integrated circuit chips thereon. The backside of the wafer is thinned, a pattern of material is removed from the backside of the wafer to form a plurality of dicing trenches. Each of the dicing trenches are positioned opposite a location on the front side of the wafer that corresponds to edges of each of the plurality of chips. The dicing trenches are filled with a filler material and a dicing support is attached to a front side of the wafer. The filler material is removed from the dicing trenches, and a force is applied to the dicing support to separate each of the plurality of chips on the wafer from each other along the dicing trenches.

Abstract translation: 一种方法包括接收具有前侧和后侧的至少一个晶片，其中前侧在其上具有多个集成电路芯片。 晶片的背面变薄，从晶片的背面去除材料图案以形成多个切割沟槽。 每个切割槽位于对应于多个芯片中的每一个的边缘的晶片正面的位置。 切割槽填充有填充材料，并且切割支撑件附接到晶片的前侧。 从切割槽移除填充材料，并且将力施加到切割支撑件，以将晶片上的多个芯片中的每一个沿着切割沟槽彼此分离。

公开(公告)号：US07781781B2

公开(公告)日：2010-08-24

申请号：US11560882

申请日：2006-11-17

Applicant: James W. Adkisson ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Mark D. Jaffe ,  Robert K. Leidy ,  Stephen E. Luce ,  Richard J. Rassel ,  Edmund J. Sprogis

Inventor： James W. Adkisson ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Mark D. Jaffe ,  Robert K. Leidy ,  Stephen E. Luce ,  Richard J. Rassel ,  Edmund J. Sprogis

IPC: H01L27/15

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2924/00014

Abstract: A CMOS image sensor array and method of fabrication. The CMOS imager sensor array comprises a substrate; an array of light receiving pixel structures formed above the substrate, the array having formed therein “m” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer; a dense logic wiring region formed adjacent to the array of light receiving pixel structures having “n” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer, where n>m. A microlens array having microlenses and color filters formed above the interlevel dielectric material layer, a microlens and respective color filter in alignment with a respective light receiving structure formed at a surface of the substrate. A top surface of the interlevel dielectric material layer beneath the microlens array is recessed from a top surface of the interlevel dielectric material layers of the dense logic wiring region.

Abstract translation: CMOS图像传感器阵列及其制造方法。 CMOS成像器传感器阵列包括衬底; 形成在衬底上方的光接收像素结构的阵列，阵列中形成有“m”级的导电结构，每个级形成在相应的层间介电材料层中; 与具有“n”级的导电结构的光接收像素结构的阵列相邻形成的密集的逻辑布线区域，每个层级形成在相应的层间电介质材料层中，其中n> m。 具有形成在层间电介质材料层上方的微透镜和滤色器的微透镜阵列，与形成在衬底表面处的各个光接收结构对准的微透镜和相应的滤色器。 微透镜阵列下面的层间介电材料层的顶表面从密集逻辑布线区域的层间介电材料层的顶表面凹陷。

公开(公告)号：US20100178766A1

公开(公告)日：2010-07-15

申请号：US12352718

申请日：2009-01-13

Applicant: Paul S. Andry ,  John M. Cotte ,  Michael F. Lofaro ,  Edmund J. Sprogis ,  James A. Tornello ,  Cornelia K. Tsang

Inventor： Paul S. Andry ,  John M. Cotte ,  Michael F. Lofaro ,  Edmund J. Sprogis ,  James A. Tornello ,  Cornelia K. Tsang

IPC: H01L21/461

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An assembly including a main wafer having a body with a front side and a back side, and a handler wafer, is obtained. The main wafer has a plurality of blind electrical vias terminating above the back side. The blind electrical vias have conductive cores with surrounding insulator adjacent side and end regions of the cores. The handler wafer is secured to the front side of the body of the main wafer. An additional step includes exposing the blind electrical vias on the back side. The blind electrical vias are exposed to various heights across the back side. Another step involves applying a first chemical mechanical polish process to the back side, to open any of the surrounding insulator adjacent the end regions of the cores remaining after the exposing step, and to co-planarize the via conductive cores, the surrounding insulator adjacent the side regions of the cores, and the body of the main wafer. Further steps include etching the back side to produce a uniform standoff height of each of the vias across the back side; depositing a dielectric across the back side; and applying a second chemical mechanical polish process to the back side, to open the dielectric only adjacent the conductive cores of the vias.

Abstract translation: 获得包括具有前侧和后侧的主体的主晶片和处理器晶片的组件。 主晶片具有在背面上方终止的多个盲电通路。 盲电通孔具有导电芯，其周围绝缘体邻近芯的侧面和端部区域。 处理器晶片固定到主晶片的主体的前侧。 另外的步骤包括在背面暴露盲电通孔。 盲孔通过背面暴露于各种高度。 另一个步骤涉及将第一化学机械抛光工艺应用于背面，以便打开暴露步骤之后残留的芯的端部附近的任何周围的绝缘体，并且将通孔导电芯，邻近的绝缘体 芯的侧面区域和主晶片的主体。 进一步的步骤包括蚀刻背面以产生穿过背面的每个通路的均匀间隔高度; 在背面沉积电介质; 以及向后侧施加第二化学机械抛光工艺，以仅在通孔的导电芯附近打开电介质。

公开(公告)号：US20100022063A1

公开(公告)日：2010-01-28

申请号：US12180789

申请日：2008-07-28

Applicant: Mete Erturk ,  Edmund J. Sprogis ,  Anthony K. Stamper

Inventor： Mete Erturk ,  Edmund J. Sprogis ,  Anthony K. Stamper

IPC: H01L21/02

CPC classification number: H01F41/041 ,  H01F17/0013 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/16 ,  H01L24/48 ,  H01L27/08 ,  H01L28/10 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45124 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2224/05599 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Various methods of forming a passive element such as an inductor raised off the surface of the substrate to improve the performance of the passive element are presented. A first wafer may be provided, and passive elements diced from a second wafer. The passive elements are flipped, and then aligned to be bonded on the first wafer such that the passive elements are raised a distance off the first wafer because of the presence of chip connections such as C4 solder bumps. A gap between the passive elements and the first wafer can be filled with underfill or air. If air is used, a hermetic seal around the gap can be created using chip connections such as C4 solder bumps or other known bonding means to seal the gap.

Abstract translation: 提出了形成无源元件的各种方法，例如从衬底的表面上升起的电感器，以提高无源元件的性能。 可以提供第一晶片，并且从第二晶片切割无源元件。 无源元件翻转，然后对齐以接合在第一晶片上，使得无源元件由于存在诸如C4焊料凸块的芯片连接而离开第一晶片一段距离。 无源元件和第一晶片之间的间隙可以用底部填充物或空气填充。 如果使用空气，则可以使用诸如C4焊料凸块或其它已知的粘合装置之类的芯片连接来密封间隙来创建间隙周围的气密密封。

公开(公告)号：US07645701B2

公开(公告)日：2010-01-12

申请号：US11751105

申请日：2007-05-21

Applicant: Brent A. Anderson ,  Paul S. Andry ,  Edmund J. Sprogis ,  Cornelia K. Tsang

Inventor： Brent A. Anderson ,  Paul S. Andry ,  Edmund J. Sprogis ,  Cornelia K. Tsang

IPC: H01L21/44

CPC classification number: H01L21/486 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2224/81005 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01019 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043

Abstract: A silicon-on-insulator (SOI) structure is provided for forming through vias in a silicon wafer carrier structure without backside lithography. The SOI structure includes the silicon wafer carrier structure bonded to a silicon substrate structure with a layer of buried oxide and a layer of nitride separating these silicon structures. Vias are formed in the silicon carrier structure and through the oxide layer to the nitride layer and the walls of the via are passivated. The vias are filled with a filler material of either polysilicon or a conductive material. The substrate structure is then etched back to the nitride layer and the nitride layer is etched back to the filler material. Where the filler material is polysilicon, the polysilicon is etched away forming an open via to the top surface of the carrier wafer structure. The via is then backfilled with conductive material.

Abstract translation: 提供绝缘体上硅（SOI）结构，用于在硅晶片载体结构中形成通孔，而无需背面光刻。 SOI结构包括用一层掩埋氧化物结合到硅衬底结构的硅晶片载体结构和分离这些硅结构的氮化物层。 在硅载体结构中形成通孔，并且通过氧化物层到达氮化物层，并且通孔的壁被钝化。 通孔填充有多晶硅或导电材料的填充材料。 然后将衬底结构回蚀刻到氮化物层，氮化物层被回蚀刻到填充材料上。 当填充材料是多晶硅时，多晶硅被蚀刻掉，形成开口通孔到载体晶片结构的上表面。 然后通孔用导电材料回填。

公开(公告)号：US20090174059A1

公开(公告)日：2009-07-09

申请号：US12344095

申请日：2008-12-24

Applicant: John H. Magerlein ,  Chirag S. Patel ,  Edmund J. Sprogis ,  Herbert I. Stroller

Inventor： John H. Magerlein ,  Chirag S. Patel ,  Edmund J. Sprogis ,  Herbert I. Stroller

IPC: H01L23/48 ,  H01L21/56

CPC classification number: H01L21/486 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/147 ,  H01L24/16 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/05571 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2924/00012

Abstract: A Silicon Based Package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including metal capture structures in contact with the first surface and multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the reverse side of the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Form via holes with tapered or vertical sidewalls, which extend through the UTSW to reach the metal capture structures. Then form metal pads in the via holes which extend through the UTSW, making electrical contact to the metal capture structures. Then bond the metal pads in the via holes to pads of a carrier.

Abstract translation: 基于硅的封装（SBP）由从作为SBP的基底的厚晶片开始形成，该基板由具有平坦的第一表面和反面的硅组成。 然后形成包括与第一表面接触的金属捕获结构和在第一表面上的多层导体图案的互连结构。 在SBP和晶片保持器之间形成临时结合，晶片保持器是刚性结构。 将晶圆的反面变薄到所需的厚度，以形成用于SBP的超薄硅晶片（UTSW）。 通过具有锥形或垂直侧壁的孔形成，其延伸穿过UTSW以到达金属捕获结构。 然后在穿过UTSW的通孔中形成金属焊盘，使其与金属捕获结构电接触。 然后将通孔中的金属焊盘接合到载体的焊盘。