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    Capacitors including inner and outer electrodes
    31.
    发明授权
    Capacitors including inner and outer electrodes 有权
    电容器包括内外电极

    公开(公告)号：US09224799B2

    公开(公告)日：2015-12-29

    申请号：US14145117

    申请日：2013-12-31

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Dipankar Pramanik

    IPC: H01L49/02 ,  H01L27/08 ,  H01L29/66 ,  H01L29/94 ,  H01L27/108

    CPC classification number: H01L28/75 ,  H01L27/1085 ,  H01L29/66181 ,  H01L29/94

    Abstract: Provided are capacitor stacks for use in integrated circuits and methods of fabricating these stacks. A capacitor stack includes a dielectric layer and one or two inner electrode layers, such as a positive inner electrode layer and a negative inner electrode layer. The inner electrode layers directly interface the dielectric layer. The stack may also include outer electrode layers. The inner electrode layers are either chemically stable or weakly chemically unstable, while in contact with the dielectric layer based on the respective phase diagrams. Furthermore, the electron affinity of the positive inner electrode layer may be less than the electron affinity of the dielectric layer. The sum of the electron affinity and bandgap of the negative inner electrode layer may be less than that of the dielectric layer. In some embodiments, inner electrode layers are formed from heavily doped semiconducting materials, such as gallium arsenide or gallium aluminum arsenide.

    Abstract translation: 提供用于集成电路的电容器堆叠以及制造这些堆叠的方法。 电容器堆叠包括电介质层和一个或两个内部电极层，例如正的内部电极层和负的内部电极层。 内部电极层直接与介电层接触。 堆叠还可以包括外部电极层。 内部电极层是化学稳定的或弱的化学不稳定的，同时基于相应的相图与介电层接触。 此外，正内电极层的电子亲和力可能小于电介质层的电子亲和力。 负的内电极层的电子亲和力和带隙的总和可以小于电介质层的电子亲和力。 在一些实施例中，内部电极层由重掺杂的半导体材料形成，例如砷化镓或砷化镓铝。

    Surface preparation with remote plasma
    32.
    发明授权
    Surface preparation with remote plasma 有权
    远程等离子体表面处理

    公开(公告)号：US09224594B2

    公开(公告)日：2015-12-29

    申请号：US14083124

    申请日：2013-11-18

    Applicant: Intermolecular Inc.

    Inventor： Kevin Kashefi ,  Frank Greer

    IPC: H01L21/314 ,  H01L21/02 ,  H01L29/51

    CPC classification number: H01L21/02304 ,  H01L21/02046 ,  H01L21/02181 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/28194 ,  H01L29/517

    Abstract: Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface.

    Abstract translation: 公开了使用等离子体源处理半导体表面的方法和装置。 该装置包括封闭衬底支撑件的外部真空室，等离子体源（直接等离子体或远程等离子体）和可选的喷头。 也可以使用其他气体分配和气体分散硬件。 等离子体源可用于产生可操作以改变半导体材料的表面的活化物质。 此外，等离子体源可以用于产生可操作以增强半导体表面上的沉积前体的成核的活化物质。

    Methods for forming resistive switching memory elements
    36.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US09178145B2

    公开(公告)日：2015-11-03

    申请号：US14264475

    申请日：2014-04-29

    Applicant: Intermolecular Inc.

    Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    Doped electrodes used to inhibit oxygen loss in ReRAM device
    37.
    发明授权
    Doped electrodes used to inhibit oxygen loss in ReRAM device 有权
    用于抑制ReRAM器件中的氧损失的掺杂电极

    公开(公告)号：US09178142B2

    公开(公告)日：2015-11-03

    申请号：US13784465

    申请日：2013-03-04

    Applicant: Intermolecular Inc.

    Inventor： Mihir Tendulkar

    IPC: H01L45/00 ,  H01L29/06 ,  H01L27/22 ,  H01L27/24

    CPC classification number: H01L45/1253 ,  H01L27/224 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616

    Abstract: A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.

    Abstract translation: 一种用于形成电阻式开关存储元件的非易失性存储器件和方法，具有改善的寿命和开关性能​​。 非易失性存储元件包括形成在第一和第二电极之间的电阻式开关层。 电阻开关层包括金属氧化物。 一个或多个电极包括掺杂剂材料，以提供电极具有增强的阻氧性能，其维持和控制存储元件内的氧离子含量有助于增加器件寿命和性能。

    Zinc Stannate Ohmic Contacts for P-Type Gallium Nitride
    39.
    发明申请
    Zinc Stannate Ohmic Contacts for P-Type Gallium Nitride 有权
    锡锡酸盐欧姆接触P型氮化镓

    公开(公告)号：US20150311397A1

    公开(公告)日：2015-10-29

    申请号：US14259387

    申请日：2014-04-23

    Applicant: INTERMOLECULAR, INC.

    Inventor： Jianhua Hu ,  Heng Kai Hsu ,  Tong Ju ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

    IPC: H01L33/42 ,  H01L33/32

    CPC classification number: H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/483 ,  H01L2933/0016

    Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

    Abstract translation: 由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。 可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。

    Low Emissivity Glass Incorporating Phosphorescent Rare Earth Compounds
    40.
    发明申请
    Low Emissivity Glass Incorporating Phosphorescent Rare Earth Compounds 审中-公开
    低辐射玻璃掺入磷光稀土化合物

    公开(公告)号：US20150291812A1

    公开(公告)日：2015-10-15

    申请号：US14250210

    申请日：2014-04-10

    Applicant: INTERMOLECULAR INC.

    Inventor： Abraham Anapolsky ,  Scott Jewhurst ,  Daniel Schweigert

    IPC: C09D5/32 ,  C23C16/515 ,  C23C16/513 ,  C23C28/04 ,  C23C16/42

    CPC classification number: C09D5/32 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/366 ,  C09D5/004 ,  C23C14/04 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345

    Abstract: Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. The optical properties of the coating (e.g. the transmissivity and the IR emissivity) are generally coupled. In some embodiments, silicate materials are doped with rare earth elements. These doped silicate materials are able to absorb ultra-violet (UV) photons and emit photons in the visible range. This allows the transmissivity to be at least partially decoupled from the IR emissivity of the coated panel, resulting in a larger range of performance.

    Abstract translation: 公开了由方法制造的方法和涂层板，以在热处理之前和之后形成多个涂层（例如，一个或多个红外反射层），具有最小的颜色变化。 涂层的光学性质（例如透射率和IR辐射率）通常是耦合的。 在一些实施例中，硅酸盐材料掺杂有稀土元素。 这些掺杂的硅酸盐材料能够吸收紫外（UV）光子并发射可见光范围内的光子。 这允许透射率至少部分地与涂覆面板的IR发射率去耦合，导致更大的性能范围。

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