公开(公告)号：US09230799B2

公开(公告)日：2016-01-05

申请号：US13981048

申请日：2012-01-23

Applicant: Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

Inventor： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

IPC: H01L29/20 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/778 ,  H01L29/423 ,  H01L23/00 ,  H01L29/205 ,  H01L29/51

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Abstract translation: 一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜 通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US09006021B2

公开(公告)日：2015-04-14

申请号：US13094043

申请日：2011-04-26

Applicant: Kazuhide Hasebe ,  Hiroki Murakami ,  Akinobu Kakimoto

Inventor： Kazuhide Hasebe ,  Hiroki Murakami ,  Akinobu Kakimoto

IPC: H01L21/00 ,  C23C16/24 ,  C23C16/02

CPC classification number: H01L21/76843 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/52 ,  H01L21/76876

Abstract: The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.

Abstract translation: 非晶硅膜形成方法包括通过加热基底并将氨基硅烷基气体流动到加热的基底上在基底的表面上形成籽晶层; 通过加热基底，在加热的基体的表面上的种子层上供给不含氨基的硅烷系气体，将不含氨基的硅烷类气体进行热分解，在种子层上形成非晶硅膜。

公开(公告)号：US09005459B2

公开(公告)日：2015-04-14

申请号：US13420723

申请日：2012-03-15

Applicant: Akinobu Kakimoto ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

Inventor： Akinobu Kakimoto ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC: B44C1/22 ,  B05C11/00 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/45546 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32779 ,  H01L21/02337 ,  H01L21/31116 ,  H01L21/67109

Abstract: A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

Abstract translation: 所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

公开(公告)号：US08945339B2

公开(公告)日：2015-02-03

申请号：US13283869

申请日：2011-10-28

Applicant: Akinobu Kakimoto ,  Katsuhiko Komori ,  Kazuhide Hasebe

Inventor： Akinobu Kakimoto ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/22 ,  H01L21/306 ,  C23F1/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  C23C16/458 ,  C23C16/46

CPC classification number: H01L21/02057 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/41766

Abstract: A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.

Abstract translation: 成膜装置包括用于供给氨基硅烷气体的气体供给机构和不包含氨基的硅烷系气体。 在具有开口到达导电物质的绝缘膜的表面上和在开口的底面上形成种子层的工艺，通过将氨基硅烷基气体供应到处理室中，并通过在晶种层上形成硅膜 将不含氨基的硅烷类气体供给到处理室中，在处理室中依次进行。

公开(公告)号：US08753984B2

公开(公告)日：2014-06-17

申请号：US13332691

申请日：2011-12-21

Applicant: Hiroki Murakami ,  Yosuke Watanabe ,  Kazuhide Hasebe

Inventor： Hiroki Murakami ,  Yosuke Watanabe ,  Kazuhide Hasebe

IPC: H01L21/20

CPC classification number: C23C16/345 ,  C23C16/45525

Abstract: A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Abstract translation: 一种在待处理物体的表面上形成氮化硅膜的方法，该方法包括通过使用至少一种氨基硅烷化合物形成在待加工物体的表面上起氮化硅膜的晶种的种子层的作用， 在将待加工物体的表面上形成氮化硅膜之前。

公开(公告)号：US08728957B2

公开(公告)日：2014-05-20

申请号：US13095503

申请日：2011-04-27

Applicant: Kazuhide Hasebe ,  Akinobu Kakimoto

Inventor： Kazuhide Hasebe ,  Akinobu Kakimoto

IPC: H01L21/18 ,  C23C16/52

CPC classification number: H01L21/02636 ,  C23C16/22 ,  C23C16/24 ,  C23C16/45525 ,  C23C16/481 ,  H01L21/02425 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262

Abstract: A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature.

Abstract translation: 在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的硅膜的薄膜形成方法包括交替地和反复地进行第一气体供给处理，其中由硅构成的硅烷系气体 并且将氢气以硅烷类气体吸附在待处理物体的表面上的状态供给至处理室，第二气体供给工序将含有杂质的气体供给至处理室，形成 含有杂质的非晶硅膜。 因此，即使在相对较低的温度下也可以形成含有具有良好填充特性的杂质的非晶硅膜。

公开(公告)号：US08697578B2

公开(公告)日：2014-04-15

申请号：US12285575

申请日：2008-10-08

Applicant: Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

Inventor： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

IPC: H01L21/311

CPC classification number: C23C16/345 ,  C23C16/0218 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45542 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522

Abstract: A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.

Abstract translation: 在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜 反应室和第一喷嘴，处于反应室不容纳目标基板的状态。 清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序 从反应室内供给清洗反应气体和排气。 蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

公开(公告)号：US08343594B2

公开(公告)日：2013-01-01

申请号：US12167270

申请日：2008-07-03

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC: H05H1/24

CPC classification number: C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

Abstract: A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

Abstract translation: 一种用于半导体工艺的成膜装置包括：配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线，第二工艺气体供应 电路，具有第二工艺气体供给管线，其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场，以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭，以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

公开(公告)号：US20120282418A1

公开(公告)日：2012-11-08

申请号：US13552844

申请日：2012-07-19

Applicant: Pao-Hwa CHOU ,  Kazuhide Hasebe

Inventor： Pao-Hwa CHOU ,  Kazuhide Hasebe

IPC: C23C16/36 ,  C23C16/52

CPC classification number: C23C16/36 ,  C23C16/45531 ,  C23C16/45546

Abstract: A method for forming an SiCN film on target substrates placed in a process field inside a process container repeats a unit cycle a plurality of times to laminate thin films respectively formed, thereby forming the SiCN film with a predetermined thickness. The unit cycle includes performing and suspending supply of a silicon source gas, a nitriding gas, and a carbon hydride gas respectively from first, second, and third gas distribution nozzles to the process field. The unit cycle does not turn any one of the gases into plasma but heats the process field to a set temperature of 300 to 700° C. with the supply of the carbon hydride gas performed for a time period in total longer than that of the supply of the silicon source gas, so as to provide the SiCN film with a carbon concentration of 15.2% to 28.5%.

Abstract translation: 在放置在处理容器内的工艺场中的目标衬底上形成SiCN膜的方法重复多次单元循环以层压分别形成的薄膜，由此形成具有预定厚度的SiCN膜。 单位周期包括分别从第一，第二和第三气体分配喷嘴向处理场执行和暂停供应硅源气体，氮化气体和碳氢化合物气体。 单位循环不会将任何一种气体转化为等离子体，但是将过程场加热到设定温度为300至700℃，碳氢化合物气体的供应时间总计比供应更长 的硅源气体，以提供碳浓度为15.2％至28.5％的SiCN膜。

公开(公告)号：US08216648B2

公开(公告)日：2012-07-10

申请号：US12954778

申请日：2010-11-26

Applicant: Masanobu Matsunaga ,  Keisuke Suzuki ,  Jaehyuk Jang ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

Inventor： Masanobu Matsunaga ,  Keisuke Suzuki ,  Jaehyuk Jang ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

IPC: C23C16/34

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228

Abstract: A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.

Abstract translation: 成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和 第二供给步骤多次以在目标物体上形成氮化硅膜。 第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。 第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。