公开(公告)号：US11352711B2

公开(公告)日：2022-06-07

申请号：US16513434

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D21/08 ,  H01L21/02 ,  H01L21/67 ,  C25D17/00

Abstract: Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

公开(公告)号：US20220127747A1

公开(公告)日：2022-04-28

申请号：US17078413

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Nolan L. Zimmerman ,  Charles Sharbono ,  Gregory J. Wilson ,  Paul R. McHugh ,  Paul Van Valkenburg ,  Deepak Saagar Kalaikadal ,  Kyle M. Hanson

IPC: C25D17/10 ,  C25D17/00 ,  C25D21/12

Abstract: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

公开(公告)号：US11214890B2

公开(公告)日：2022-01-04

申请号：US16265503

申请日：2019-02-01

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson

IPC: C25D21/08 ,  C25D17/00 ,  B08B9/093 ,  C25D17/06 ,  C25D5/04 ,  B08B1/02 ,  B08B3/02 ,  B08B9/00

Abstract: Systems for cleaning electroplating system components may include a seal cleaning assembly incorporated with an electroplating system. The seal cleaning assembly may include an arm pivotable between a first position and a second position. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may also include a cleaning head including a bracket portion coupled with a distal portion of the arm. The cleaning head may be characterized by a front portion formed to interface with a seal of the electroplating apparatus. The cleaning head may define a trench along the front portion, and the cleaning head may define a plurality of fluid channels through the cleaning head, each fluid channel of the plurality of fluid channels fluidly accessing a backside of the trench.

公开(公告)号：US09859135B2

公开(公告)日：2018-01-02

申请号：US14626903

申请日：2015-02-19

Applicant: Applied Materials, Inc.

Inventor： Jonathan S. Frankel ,  Brian J. Brown ,  Vincent S. Francischetti ,  Paul McHugh ,  Kyle M. Hanson ,  Ekaterina Mikhaylichenko

IPC: B05B1/04 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  B05B1/046 ,  H01L21/02052 ,  H01L21/67057

Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.

公开(公告)号：US20170263472A1

公开(公告)日：2017-09-14

申请号：US15441081

申请日：2017-02-23

Applicant: APPLIED Materials, Inc.

Inventor： John L. Klocke ,  Kyle M. Hanson ,  Joseph A. Jonathan ,  Stuart Crane

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  B08B3/04 ,  H01L21/687 ,  B08B3/12

CPC classification number: H01L21/67057 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6719 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer processor has a rotor holding wafers within a process tank. The rotor rotates sequentially moving the wafers through a process liquid held in the process tank. The tank may have an I-beam shape to reduce the volume of process liquid. A load port is provided at a top of the process tank for loading and unloading wafers into and out of the process tank. Rinsing and cleaning chambers may be associated with the load port to remove process liquid from processed wafers. The processor may be oriented with the rotor rotating about a horizontal axis or about a vertical axis.

公开(公告)号：US20150083600A1

公开(公告)日：2015-03-26

申请号：US14507692

申请日：2014-10-06

Applicant: APPLIED Materials, Inc.

Inventor： Rajesh Baskaran ,  Robert W. Batz, JR. ,  Bioh Kim ,  Thomas L. Ritzdorf ,  John Lee Klocke ,  Kyle M. Hanson

IPC: C25D5/02 ,  C25D3/46 ,  C25D3/12 ,  C25D3/20 ,  C25D3/54 ,  C25D3/34 ,  C25D3/38 ,  C25D3/30

CPC classification number: C25D5/028 ,  C25D3/12 ,  C25D3/20 ,  C25D3/30 ,  C25D3/34 ,  C25D3/38 ,  C25D3/46 ,  C25D3/54 ,  C25D5/022 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25F3/02 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H05K3/423

Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids.

Abstract translation: 描述了利用第一处理流体和对电极对微特征工件进行电解处理的工艺和系统。 使用第一处理流体，对电极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。 阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。

公开(公告)号：US20250006519A1

公开(公告)日：2025-01-02

申请号：US18342991

申请日：2023-06-28

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson ,  Eric J. Bergman ,  Gregory J. Wilson ,  Paul R. McHugh ,  Benjamin Clay Bradley ,  Aaron Paul Juntunen ,  Deepak Saagar Kalaikadal ,  Daniel Durado ,  Carl Campbell Stringer ,  James Jay Tripp ,  Jason A. Rye ,  John L. Klocke

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/673

Abstract: Method and systems for cleaning and wetting a semiconductor substrate, are provided. Methods and systems include forming an atmosphere in a basin housing the semiconductor substrate with a gas having a higher solubility in a wetting agent than oxygen. Methods and systems include spraying the wetting agent with a spray head onto the substrate while maintaining the atmosphere. Methods and systems include rotationally translating the semiconductor substrate, the spray head, or both the semiconductor substrate and the spray head, Methods and systems include wetting a plurality of features defined in the substrate.

公开(公告)号：US20240145251A1

公开(公告)日：2024-05-02

申请号：US17974426

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson

IPC: H01L21/288 ,  C25D17/00 ,  C25D17/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/768

CPC classification number: H01L21/2885 ,  C25D17/007 ,  C25D17/10 ,  H01L21/6723 ,  H01L21/68764 ,  H01L21/76873

Abstract: Conditions at the perimeter of the wafer may be characterized and used to adjust current stolen by the weir thief electrodes during a plating process to generate more uniform film thicknesses. An electrode may be positioned in a plating chamber near the periphery of the wafer as the wafer rotates. To characterize the electrical contacts on the seal, a wafer with a seed layer may be loaded into the plating chamber, and a constant current may be driven through the electrode into the conductive layer on the wafer. As an electrical characteristic of this current varies, such as a voltage required to drive a constant current, a mapping characterizing the seal quality or the openings in the mask layer may be generated.

公开(公告)号：US11274377B2

公开(公告)日：2022-03-15

申请号：US16386456

申请日：2019-04-17

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson ,  Manjunatha Vishwanatha Adagoor ,  Karthikeyan Balaraman ,  Karthick Vasu ,  Shailesh Chouriya

IPC: C25D17/00 ,  C25D17/06

Abstract: Electroplating system seals may include an annular busbar characterized by an inner annular radius and an outer annular radius. The annular busbar may include a plurality of contact extensions. The seals may include an external seal member characterized by an inner annular radius and an outer annular radius. The external seal member may be vertically aligned with and extend inward of the contact extensions at the inner annular radius of the external seal member. The external seal member may include an interior surface at least partially facing the contact extensions. The seals may also include an internal seal member extending a first distance along the interior surface of the external seal member from the inner annular radius. The internal seal member may include a deformable material configured to support a substrate between the internal seal member and the plurality of contact extensions.

公开(公告)号：US09958782B2

公开(公告)日：2018-05-01

申请号：US15196725

申请日：2016-06-29

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson ,  Gregory J. Wilson ,  Viachslav Babayan

IPC: H01L21/67 ,  C23C16/50 ,  C23C16/56 ,  G03F7/38 ,  C23C16/54 ,  H01L21/677

CPC classification number: G03F7/38 ,  C23C16/54 ,  C23C16/56 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/67751

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.