Abstract:
A method for producing and using an ultrapure colloidal silica dispersion is disclosed. The ultrapure colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and less than 2 ppm residual alcohol. The method comprises dissolving a fumed silica in an aqueous solvent comprising an alkali metal hydroxide to produce an alkaline silicate solution, removing the alkali metal via ion exchange to generate a silicic acid solution, adjusting temperature, concentration and pH of said silicic acid solution to values sufficient to initiate nucleation and particle growth, and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion.
Abstract:
The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
Abstract:
The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
Abstract:
An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol.
Abstract:
The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.
Abstract:
Composite materials for electronic packages are disclosed. The composite materials comprise a core layer and first and second cladding layers. The core and cladding layer compositions and thicknesses are selected to maximize thermal and electrical conductivity and to minimize the coefficient of thermal expansion of the composite. The composite material may be employed to fashion the package base, the leadframe, a heat spreader or combinations thereof. In one embodiment, a portion of the first cladding layer is removed so that an electronic device may be mounted directly to a high thermal conductivity core.
Abstract:
There is provided a component for use in electronic packaging. The component is a composite having a graphite matrix which is infiltrated with a metal or a metal alloy and the external surfaces of the composite then coated with a metallic layer to provide environmental and mechanical protection. The packaging components are lightweight, have a coefficient of thermal expansion close to that of a silicon based integrated circuit device and further, have a high coefficient of thermal conductivity.
Abstract:
There is disclosed components for electronic packaging applications having integral bumps. A leadframe is formed by etching a metallic strip from one side to form outwardly extending, substantially perpendicular integral bumps. The metallic strip is then etched from the opposite side to form individual leads. When the integrally bumped component is an package base, fatigue of solder balls is reduced.
Abstract:
There is provided a base for an electronic package. The base includes a peripheral portion for a polymer adhesive and a central portion for one or more semiconductor devices. A lead support is adjacent the substrate and located between the peripheral portion and the central portion. When a polymer adhesive bonds a leadframe to the package base, the lead support prevents deflection of the inner lead tips.
Abstract:
A process for producing electronic package components from an aluminum alloy is disclosed. The components have a black color through integral color anodization. The desired color, thickness and surface finish are achieved by regulation of amperage during anodization. The amperage is rapidly raised to in excess of 80 amps per square foot and then allowed to gradually decrease as a function of oxide growth.