Abstract:
An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.
Abstract:
The present application discloses various implementations of a semiconductor package including an organic substrate and one or more interposers having through-semiconductor vias (TSVs). Such a semiconductor package may include a contiguous organic substrate having a lower substrate segment including first and second pluralities of lower interconnect pads, the second plurality of lower interconnect pads being disposed in an opening of the lower substrate segment. The contiguous organic substrate may also include an upper substrate segment having an upper width and including first and second pluralities of upper interconnect pads. In addition, the semiconductor package may include at least one interposer having TSVs for electrically connecting the first and second pluralities of lower interconnect pads to the first and second pluralities of upper interconnect pads. The interposer has an interposer width less than the upper width of the upper substrate segment.
Abstract:
An interface substrate is disclosed which includes an interposer having through-semiconductor vias. An upper and a lower organic substrate are further built around the interposer. The disclosed interface substrate enables the continued use of low cost and widely deployed organic substrates for semiconductor packages while providing several advantages. The separation of the organic substrate into upper and lower substrates enables the cost effective matching of fabrication equipment. By providing an opening in one of the organic substrates, one or more semiconductor dies may be attached to exposed interconnect pads coupled to through-semiconductor vias of the interposer, enabling the use of flip chips with high-density microbump arrays and the accommodation of dies with varied bump pitches. By providing the opening specifically in the upper organic substrate, a package-on-package structure with optimized height may also be provided.
Abstract:
A package such as a system in package (SiP) includes a first die disposed in a first mold layer and coupled to a first dielectric layer disposed above the first mold and a second die disposed in a second mold layer and coupled to a second dielectric layer disposed above the second die. A pillar is disposed through the second mold layer and is coupled to a first metal layer disposed above the first dielectric layer. The first metal layer is coupled to the first die, and the pillar is coupled to a second metal layer disposed above the second dielectric layer.
Abstract:
In embodiments described herein, an integrated circuit (IC) package is provided. The IC package may include a substrate, an IC die, and a heat spreader. The IC die may have opposing first and second surfaces, where the first surface of the IC die is coupled to a surface of the substrate. The heat spreader may have a surface coupled to the second surface of the IC die by a thermal interface (TI) material. The surface of the heat spreader may have a micro-recess which may include a micro-channel or a micro-dent to direct a flow of TI material towards or away from a predetermined area of the second surface of the IC die based on temperatures of the substrate, the IC die, and/or the heat spreader.
Abstract:
Flip chip packages are described that include two or more thermal interface materials (TIMs). A die is mounted to a substrate by solder bumps. A first TIM is applied to the die, and has a first thermal resistance. A second TIM is applied to the die and/or the substrate, and has a second thermal resistance that is greater than the first thermal resistance. An open end of a heat spreader lid is mounted to the substrate such that the die is positioned in an enclosure formed by the heat spreader lid and substrate. The first TIM and the second TIM are each in contact with an inner surface of the heat spreader lid. A ring-shaped stiffener may surround the die and be connected between the substrate and heat spreader lid by the second TIM.
Abstract:
Embodiments of the present invention are directed to a wire-free data center/server. The data center/server is wire-free in the sense that communication within a data unit of the data center/server (i.e., intra-data unit), between data units of the data center/server (inter-data unit), and between the data units and the backplane of the data center/server is performed wirelessly.
Abstract:
Flip chip packages are described that include two or more thermal interface materials (TIMs). A die is mounted to a substrate by solder bumps. A first TIM is applied to the die, and has a first thermal resistance. A second TIM is applied to the die and/or the substrate, and has a second thermal resistance that is greater than the first thermal resistance. An open end of a heat spreader lid is mounted to the substrate such that the die is positioned in an enclosure formed by the heat spreader lid and substrate. The first TIM and the second TIM are each in contact with an inner surface of the heat spreader lid. A ring-shaped stiffener may surround the die and be connected between the substrate and heat spreader lid by the second TIM.
Abstract:
In an embodiment, a thermal interface material (TIM) is provided. The TIM includes first and a second layers of a first transition metal, and a third layer including a plurality of carbon nanotubes supported in a flexible polymer matrix and a second transition metal coupled to sidewalls of carbon nanotubes. The first and second metal layers are in contact with first and second ends of carbon nanotube. The TIM further includes fourth and fifth layers of an alloy material coupled to the first and second metal layers, respectively. The carbon nanotube based TIM including the layers with transition metal allow improved heat transfer from an integrated circuit die to a heat spreader.
Abstract:
The present application discloses various implementations of a semiconductor package including an organic substrate and one or more interposers having through-semiconductor vias (TSVs). Such a semiconductor package may include a contiguous organic substrate having a lower substrate segment including first and second pluralities of lower interconnect pads, the second plurality of lower interconnect pads being disposed in an opening of the lower substrate segment. The contiguous organic substrate may also include an upper substrate segment having an upper width and including first and second pluralities of upper interconnect pads. In addition, the semiconductor package may include at least one interposer having TSVs for electrically connecting the first and second pluralities of lower interconnect pads to the first and second pluralities of upper interconnect pads. The interposer has an interposer width less than the upper width of the upper substrate segment.